Superior Data Retention for Sub-20 nm Triple Level Per Cell NAND Flash Memory by Using a Novel Data Programming Method

2016 ◽  
Vol 16 (7) ◽  
pp. 7772-7778
Author(s):  
Wei Lin ◽  
Chun-Yen Chang
Keyword(s):  
Flash Memory ◽  
Programming Method ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
20 Nm

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

2014 ◽  
Vol 35 (1) ◽  
pp. 51-53 ◽  
Author(s):  
Kyunghwan Lee ◽  
Myounggon Kang ◽  
Seongjun Seo ◽  
Duckseoung Kang ◽  
Dong Hua Li ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Retention Characteristics ◽  
20 Nm

64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

2012 ◽  
Vol 51 ◽  
pp. 04DD01 ◽  
Author(s):  
Xizhen Zhang ◽  
Mitsue Takahashi ◽  
Ken Takeuchi ◽  
Shigeki Sakai
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention
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