Gate Insulator Effects on the Electrical Performance of ZnO Thin Film Transistor on a Polyethersulphone Substrate

2012 ◽  
Vol 12 (7) ◽  
pp. 5859-5863 ◽  
Author(s):  
Jae-Kyu Lee ◽  
Duck-Kyun Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Electrical Performance ◽  
Zno Thin Film

P-26: Self-aligned Top-gate ZnO Thin Film Transistor with Novel Al2O3/SiO2 Gate Insulator Structure

2010 ◽  
Vol 41 (1) ◽  
pp. 1319 ◽  
Author(s):  
Rongsheng Chen ◽  
Shuyun Zhao ◽  
Wei Zhou ◽  
Hoi Sing Kwok
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Thin Film

scholarly journals A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 969
Author(s):  
Haiyang Xu ◽  
Xingwei Ding ◽  
Jie Qi ◽  
Xuyong Yang ◽  
Jianhua Zhang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Active Layer ◽  
Dielectric Layer ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Threshold Voltage Shift ◽  
Layer Deposition

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

2021 ◽  
Vol 119 (9) ◽  
pp. 093502
Author(s):  
Md Mehedi Hasan ◽  
Mohit ◽  
Jinbaek Bae ◽  
Eisuke Tokumitsu ◽  
Hye-Yong Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
High Performance ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Thin Film

Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

2019 ◽  
pp. 482
Author(s):  
RAVINDRA NAIK BUKKE ◽  
NARENDRA NAIK MUDE ◽  
JEWEL KUMER SAHA ◽  
YOUNGOO KIM ◽  
JIN JANG
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Lanthanum Doping

Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

2019 ◽  
pp. 482
Author(s):  
RAVINDRA NAIK BUKKE ◽  
NARENDRA NAIK MUDE ◽  
JEWEL KUMER SAHA ◽  
YOUNGOO KIM ◽  
JIN JANG
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Lanthanum Doping

Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering

2006 ◽  
Vol 89 (2) ◽  
pp. 022905 ◽  
Author(s):  
Il-Doo Kim ◽  
Mi-Hwa Lim ◽  
KyongTae Kang ◽  
Ho-Gi Kim ◽  
Si-Young Choi
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
High K
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