Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

2019 ◽  
pp. 482
Author(s):  
RAVINDRA NAIK BUKKE ◽  
NARENDRA NAIK MUDE ◽  
JEWEL KUMER SAHA ◽  
YOUNGOO KIM ◽  
JIN JANG
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Lanthanum Doping

Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor

2019 ◽  
pp. 482
Author(s):  
RAVINDRA NAIK BUKKE ◽  
NARENDRA NAIK MUDE ◽  
JEWEL KUMER SAHA ◽  
YOUNGOO KIM ◽  
JIN JANG
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Lanthanum Doping

scholarly journals A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 969
Author(s):  
Haiyang Xu ◽  
Xingwei Ding ◽  
Jie Qi ◽  
Xuyong Yang ◽  
Jianhua Zhang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Active Layer ◽  
Dielectric Layer ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Threshold Voltage Shift ◽  
Layer Deposition

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor

2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Bias Stress

Coplanar ZnO Thin-Film Transistor Using Boron Ion Doped Source/Drain Contacts

2009 ◽  
Vol 12 (10) ◽  
pp. J93 ◽  
Author(s):  
Christophe Avis ◽  
Se Hwan Kim ◽  
Ji Ho Hur ◽  
Jin Jang ◽  
W. I. Milne
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Zno Thin Film

The improved performance of a transparent ZnO thin-film transistor with AlN/Al2O3double gate dielectrics

2009 ◽  
Vol 24 (5) ◽  
pp. 055008 ◽  
Author(s):  
Jung-Min Lee ◽  
Byung-Hyun Choi ◽  
Mi-Jung Ji ◽  
Jung-Ho Park ◽  
Jae-Hong Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Improved Performance

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition
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