Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Memory Device with Different Tunneling Oxide Thicknesses

2011 ◽  
Vol 11 (7) ◽  
pp. 6109-6113
Author(s):  
Hyun Joo Kim ◽  
Joo Hyung You ◽  
Sung Ho Kim ◽  
Kae Dal Kwack ◽  
Tae Whan Kim
Keyword(s):  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Oxide

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

2001 ◽  
Vol 89 (5) ◽  
pp. 2791-2800 ◽  
Author(s):  
H. Bachhofer ◽  
H. Reisinger ◽  
E. Bertagnolli ◽  
H. von Philipsborn
Keyword(s):  
Silicon Oxide ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Transient Conduction ◽  
Nitride Oxide

Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gate

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1771-1775 ◽  
Author(s):  
Yong Kyu Lee ◽  
Suk Kang Sung ◽  
Jae Sung Sim ◽  
Ki Whan Song ◽  
Jong Duk Lee ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Nitride Oxide
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