Fabrication and characteristics of P-channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure
2006 ◽
Vol 24
(3)
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pp. 1266
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2013 ◽
Vol 31
(4)
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pp. 041203
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2012 ◽
Vol 22
(14)
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pp. 2881-2881
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2010 ◽
Vol 224
(4)
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pp. 173-181
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2007 ◽
Keyword(s):