A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

2011 ◽  
Vol 11 (12) ◽  
pp. 10480-10484
Author(s):  
Lining Zhang ◽  
Xingye Zhou ◽  
Yiwen Xu ◽  
Lin Chen ◽  
Wang Zhou ◽  
...  
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Double Gate ◽  
Velocity Saturation ◽  
Surrounding Gate

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

2008 ◽  
Vol 55 (8) ◽  
pp. 2173-2180 ◽  
Author(s):  
Venkatnarayan Hariharan ◽  
Juzer Vasi ◽  
V. Ramgopal Rao
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Double Gate ◽  
Velocity Saturation

A carrier-based analytic drain current model incorporating velocity saturation for undoped surrounding-gate MOSFETs

2009 ◽  
Vol 24 (11) ◽  
pp. 115003 ◽  
Author(s):  
Lining Zhang ◽  
Yan Guan ◽  
Wang Zhou ◽  
Lin Chen ◽  
Yiwen Xu ◽  
...  
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Velocity Saturation ◽  
Surrounding Gate

Explicit drain current model of junctionless double-gate field-effect transistors

2013 ◽  
Vol 89 ◽  
pp. 134-138 ◽  
Author(s):  
Ashkhen Yesayan ◽  
Fabien Prégaldiny ◽  
Jean-Michel Sallese
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Double Gate
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