Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Venkatnarayan Hariharan; Juzer Vasi; V. Ramgopal Rao

doi:10.1109/ted.2008.926745

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.926745 ◽

2008 ◽

Vol 55 (8) ◽

pp. 2173-2180 ◽

Cited By ~ 16

Author(s):

Venkatnarayan Hariharan ◽

Juzer Vasi ◽

V. Ramgopal Rao

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Velocity Saturation

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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424994 ◽

2010 ◽

Author(s):

Lining Zhang ◽

Xingye Zhou ◽

Yiwen Xu ◽

Lin Chen ◽

Wang Zhou ◽

...

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Velocity Saturation ◽

Surrounding Gate

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Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422298 ◽

2007 ◽

Author(s):

Venkatnarayan Hariharan ◽

Juzer Vasi ◽

Ramgopal Rao

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Saturation Model ◽

Velocity Saturation

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A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2011.3983 ◽

2011 ◽

Vol 11 (12) ◽

pp. 10480-10484

Author(s):

Lining Zhang ◽

Xingye Zhou ◽

Yiwen Xu ◽

Lin Chen ◽

Wang Zhou ◽

...

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Velocity Saturation ◽

Surrounding Gate

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Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523503 ◽

2013 ◽

Cited By ~ 1

Author(s):

M. Cheralathan ◽

C. Sampedro ◽

F. Gamiz ◽

B. Iniguez

Keyword(s):

Temperature Dependence ◽

Current Model ◽

Drain Current ◽

Double Gate

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An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/11/115003 ◽

2010 ◽

Vol 25 (11) ◽

pp. 115003 ◽

Cited By ~ 1

Author(s):

Servin Rathi ◽

Jyotika Jogi ◽

Mridula Gupta ◽

R S Gupta

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Nano Scale

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544314 ◽

2018 ◽

Author(s):

Monika Bansal ◽

Harsupreet Kaur

Keyword(s):

Current Model ◽

Drain Current ◽

Interface Trap ◽

Device Performance ◽

Double Gate ◽

The Impact ◽

Trap Charges

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Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

Microelectronics Reliability ◽

10.1016/j.microrel.2015.09.014 ◽

2016 ◽

Vol 59 ◽

pp. 30-36 ◽

Cited By ~ 7

Author(s):

Ping Wang ◽

YiQi Zhuang ◽

Cong Li ◽

Zhi Jiang ◽

YuQi Liu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Explicit drain current model of junctionless double-gate field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.07.015 ◽

2013 ◽

Vol 89 ◽

pp. 134-138 ◽

Cited By ~ 10

Author(s):

Ashkhen Yesayan ◽

Fabien Prégaldiny ◽

Jean-Michel Sallese

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Double Gate

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Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects

Microelectronics Reliability ◽

10.1016/j.microrel.2010.10.002 ◽

2011 ◽

Vol 51 (3) ◽

pp. 550-555 ◽

Cited By ~ 17

Author(s):

F. Djeffal ◽

T. Bentrcia ◽

M.A. Abdi ◽

T. Bendib

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Gate Stack ◽

Hot Carrier ◽

Hot Carrier Degradation

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