2013 14th International Conference on Ultimate Integration on Silicon (ULIS)
Latest Publications

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(FIVE YEARS 0)

Published By IEEE

9781467348027, 9781467348003, 9781467348010

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523503 ◽

2013 ◽

Cited By ~ 1

Author(s):

M. Cheralathan ◽

C. Sampedro ◽

F. Gamiz ◽

B. Iniguez

Keyword(s):

Temperature Dependence ◽

Current Model ◽

Drain Current ◽

Double Gate

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Advanced gate stack work function optimization and substrate dependent strain interactions on HKMG first stacks for 28nm VLSI ultra low power technologies

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523485 ◽

2013 ◽

Author(s):

J. Hoentschel ◽

Shiang Yang Ong ◽

T. Balzer ◽

N. Sassiat ◽

Ran Yan ◽

...

Keyword(s):

Low Power ◽

Work Function ◽

Function Optimization ◽

Gate Stack ◽

Ultra Low Power ◽

Dependent Strain

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Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523526 ◽

2013 ◽

Cited By ~ 1

Author(s):

E. A. Towie ◽

C. Riddet ◽

A. Asenov

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Quantum Well ◽

Interface Roughness

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SiGe on SOI nanowire array TFETs with homo- and heterostructure tunnel junctions

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523482 ◽

2013 ◽

Cited By ~ 5

Author(s):

S. Richter ◽

S. Blaeser ◽

L. Knoll ◽

S. Trellenkamp ◽

A. Schafer ◽

...

Keyword(s):

Tunnel Junctions ◽

Nanowire Array

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Split pocket p-n-i-n tunnel field-effect transistors

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523481 ◽

2013 ◽

Cited By ~ 6

Author(s):

D. Verreck ◽

A. S. Verhulst ◽

G. Groeseneken

Keyword(s):

Field Effect ◽

Field Effect Transistors

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Silicon and the wide bandgap semiconductors, shaping the future power electronic device market

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523479 ◽

2013 ◽

Cited By ~ 12

Author(s):

Peter Gammon

Keyword(s):

Electronic Device ◽

Wide Bandgap ◽

Power Electronic ◽

Wide Bandgap Semiconductors ◽

The Future ◽

Bandgap Semiconductors

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Prospects for SiGe thermoelectric generators

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523478 ◽

2013 ◽

Cited By ~ 1

Author(s):

D. J. Paul ◽

A. Samarelli ◽

L. Ferre Llin ◽

J. R. Watling ◽

Y. Zhang ◽

...

Keyword(s):

Thermoelectric Generators

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Non-parabolicity in Si-(110) nMOSFETs: Analytic and numerical results for the two-band k · p model

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523523 ◽

2013 ◽

Author(s):

L. Donetti ◽

F. Gamiz ◽

B. Biel ◽

C. Sampedro

Keyword(s):

Numerical Results

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Ab initio validation of continuum models for Si/SiO2 interfaces

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523509 ◽

2013 ◽

Author(s):

Blanca Biel ◽

L. Donetti ◽

A. Godoy ◽

F. J. Gamiz

Keyword(s):

Ab Initio ◽

Continuum Models

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Two-dimensional bias dependent model for the screening length in double-gate Tunnel-FETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523483 ◽

2013 ◽

Cited By ~ 1

Author(s):

M. Graef ◽

M. Schwarz ◽

T. Holtij ◽

F. Hain ◽

A. Kloes ◽

...

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Screening Length ◽

Dependent Model ◽

Tunnel Fets

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2013 14th International Conference on Ultimate Integration on Silicon (ULIS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

Advanced gate stack work function optimization and substrate dependent strain interactions on HKMG first stacks for 28nm VLSI ultra low power technologies

Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

SiGe on SOI nanowire array TFETs with homo- and heterostructure tunnel junctions

Split pocket p-n-i-n tunnel field-effect transistors

Silicon and the wide bandgap semiconductors, shaping the future power electronic device market

Prospects for SiGe thermoelectric generators

Non-parabolicity in Si-(110) nMOSFETs: Analytic and numerical results for the two-band k · p model

Ab initio validation of continuum models for Si/SiO2 interfaces

Two-dimensional bias dependent model for the screening length in double-gate Tunnel-FETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS)
Latest Publications