Enhancement of Green Electroluminescence from Nanocrystalline Silicon by Wet and Dry Processes

2006 ◽  
Vol 6 (1) ◽  
pp. 195-199 ◽  
Author(s):  
Keisuke Sato ◽  
Kenji Hirakuri
Keyword(s):  
Luminescence Property ◽  
Radiative Recombination ◽  
Annealing Temperature ◽  
Red Light ◽  
Solution Treatment ◽  
Surface Oxidation ◽  
Nanocrystalline Silicon ◽  
Green Luminescence ◽  
Spin Resonance ◽  
Recombination Centers

Correlation between defects and luminescence property from electroluminescent (EL) device composed of nanocrystalline silicon (nc-Si) prepared by wet and dry processes such as hydrofluoric (HF) acid solution treatment and annealing have investigated using electron spin resonance and EL measurements. The EL device using HF-treated nc-Si emitted strong red light, because of existence of only P′ce-centers (radiative recombination centers) on the surface vicinity. On the other hand, the EL device using annealed nc-Si above 400 °C exhibited green luminescence by the reduction of particle size due to surface oxidation. When the annealing temperature was risen from 400 °c up to 600 °c, the green luminescence strengthened with increasing the P′ce-centers. These results indicate that the formation of many radiative recombination centers onto the nc-Si surface vicinity lead to the enhancement of green luminescence from the nc-Si based EL device.

Influence of Oxidized Layer on Operating Voltage and Luminance of Nanocrystalline Silicon Electroluminescent Device

2006 ◽  
Vol 6 (1) ◽  
pp. 200-204 ◽  
Author(s):  
Keisuke Sato ◽  
Kenji Hirakuri
Keyword(s):  
Luminescence Intensity ◽  
Luminescence Property ◽  
Radiative Recombination ◽  
Nanocrystalline Silicon ◽  
Operating Voltage ◽  
Si Substrate ◽  
Order Of Magnitude ◽  
Recombination Centers ◽  
Red Luminescence ◽  
Nanocrystalline Si

A direct current (DC) operating voltage and luminescence property of red electroluminescent (EL) devices with and/or without a silicon dioxide (SiO2) layer at interface between nanocrystalline Si(nc-Si) region and Si substrate has investigated. The removal of SiO2 layer in the EL device led to the lowering of DC operating voltage from 4.0 up to 2.0 V and the increase of luminescence intensity more than one order of magnitude. The external quantum efficiency of red luminescence from the EL device without the SiO2 layer at the DC operating voltage of 3.0 V was 0.5%. These were realized by the efficient and easy injection of carriers to the radiative recombination centers in the nc-Si region due to the removal of SiO2 layer. These results indicate that the removal of SiO2 layer is drastically improved the DC operating voltage and luminescence intensity for the nc-Si based EL device.

Photoluminescence and ESR study of Si1−xGex alloy nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Toshikiyo ◽  
M. Tokunaga ◽  
S. Takeoka ◽  
M. Fujii ◽  
S. Hayashi
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Radiative Recombination ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Alloy Nanocrystals ◽  
Esr Spectrum ◽  
Spin Resonance ◽  
Recombination Centers

AbstractDangling bond defects in Si1−xGex alloy nanocrystals (nc-Si1−xGex) as small as 4 nm in diameter embedded in SiO2 thin films were studied by electron spin resonance (ESR), and the effects of the defects on photoluminescence (PL) properties were discussed. It was found that the ESR spectrum is a superposition of signals from Si and Ge dangling bonds at the interfaces between nc-Si1−xGex and SiO2 matrices (Si and Ge Pb centers). As Ge concentration increased, the intensity of the signal from the Ge Pb centers increased, while that from the Si Pb centers was almost independent of Ge concentration. The increase in the number of Ge Pb centers was accompanied by strong quenching of the PL. The observed correlation between the two measurements suggests that Ge Pb centers act as efficient non-radiative recombination centers for photogenerated carriers, resulting in the quenching of the PL.

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

2021 ◽  
Vol 118 (2) ◽  
pp. 021102
Author(s):  
Dong-Pyo Han ◽  
Ryoto Fujiki ◽  
Ryo Takahashi ◽  
Yusuke Ueshima ◽  
Shintaro Ueda ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting ◽  
Recombination Centers

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals INVESTIGATIONS INTO ELECTRON SPIN RESONANCE IN DOPED NANOCRYSTALLINE SILICON FILMS

2001 ◽  
Vol 50 (3) ◽  
pp. 512
Author(s):  
LIU XIANG-NA ◽  
XU GANG-YI ◽  
SUI YUN-XIA ◽  
HE YU-LIANG ◽  
BAO XI-MAO
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Spin Resonance ◽  
Nanocrystalline Silicon Films

Photoluminescence Study of Radiative Recombination in Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Ground State ◽  
Radiative Recombination ◽  
Single Electron ◽  
Photoluminescence Study ◽  
Recombination Centre ◽  
Electron Center ◽  
Recombination Centers

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

1999 ◽  
Vol 75 (25) ◽  
pp. 3944-3946 ◽  
Author(s):  
D. Lüerßen ◽  
R. Bleher ◽  
H. Richter ◽  
Th. Schimmel ◽  
H. Kalt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Stacking Fault ◽  
Quantum Well Structures ◽  
Recombination Centers

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

1998 ◽  
Vol 37 (Part 2, No. 4A) ◽  
pp. L398-L400 ◽  
Author(s):  
Tomoya Sugahara ◽  
Hisao Sato ◽  
Maosheng Hao ◽  
Yoshiki Naoi ◽  
Satoshi Kurai ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Direct Evidence ◽  
Recombination Centers
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