Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

1999 ◽  
Vol 75 (25) ◽  
pp. 3944-3946 ◽  
Author(s):  
D. Lüerßen ◽  
R. Bleher ◽  
H. Richter ◽  
Th. Schimmel ◽  
H. Kalt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Stacking Fault ◽  
Quantum Well Structures ◽  
Recombination Centers

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

2013 ◽  
Vol 103 (2) ◽  
pp. 022108 ◽  
Author(s):  
Torsten Langer ◽  
Holger Jönen ◽  
Andreas Kruse ◽  
Heiko Bremers ◽  
Uwe Rossow ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nonradiative Recombination ◽  
Quantum Well Structures ◽  
Recombination Centers ◽  
Induced Defects

scholarly journals Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures

1999 ◽  
Vol 4 (S1) ◽  
pp. 87-92 ◽  
Author(s):  
B Monemar ◽  
J P Bergman ◽  
J Dalfors ◽  
G Pozina ◽  
B E Sernelius ◽  
...  
Keyword(s):  
Quantum Well ◽  
Short Range ◽  
Radiative Recombination ◽  
Multiple Quantum Well ◽  
Spectral Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Potential Fluctuations ◽  
Short Range Potential ◽  
Range Potential

We present a study of the radiative recombination in In0.15Ga0.85N/GaN multiple quantum well samples, where the conditions of growth of the InGaN quantum layers were varied. The piezoelectric field as well as short range potential fluctuations are screened via different mechanisms by donor electrons and excited electron-hole pairs. These effects account for a large part of the spectral shift with donor doping (an upward shift of the photoluminescence (PL) peak up to 0.2 eV is observed for a Si donor density of 2 × 1018 cm−3 in the well), with excitation intensity and with delay time after pulsed excitation (also shifts up to 0.2 eV). It appears like 2-dimensional screening of short range potential fluctuations is needed to fully explain the data. We suggest that excitons as well as shallow donors are at least partly impact ionized by electrons in the rather strong lateral potential fluctuations.

Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

1993 ◽  
Vol 88 (11-12) ◽  
pp. 943-946
Author(s):  
C. Weisbuch ◽  
R.C. Miller ◽  
R. Dingle ◽  
A.C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Quantum States ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasma

2002 ◽  
Vol 36 (1) ◽  
pp. 81-84 ◽  
Author(s):  
T. S. Shamirzaev ◽  
A. L. Sokolov ◽  
K. S. Zhuravlev ◽  
A. Yu. Kobitski ◽  
H. P. Wagner ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nonradiative Recombination ◽  
Quantum Well Structures ◽  
Recombination Centers

Radiative recombination rate in quantum-well structures in the model without k-selection

1997 ◽  
Vol 31 (9) ◽  
pp. 929-932 ◽  
Author(s):  
A. A. Afonenko ◽  
I. S. Manak ◽  
V. A. Shevtsov ◽  
V. K. Kononenko
Keyword(s):  
Quantum Well ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Radiative Recombination Rate ◽  
Quantum Well Structures

Radiative recombination processes in ZnSe/ZnSexSe1−x multiple-quantum-well structures

1993 ◽  
Vol 185 (1-4) ◽  
pp. 352-356 ◽  
Author(s):  
M. Dabbicco ◽  
R. Cingolani ◽  
G. Scamarcio ◽  
M. Lepore ◽  
M. Ferrara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Recombination Processes
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