Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence

2012 ◽  
Vol 112 (3) ◽  
pp. 033507 ◽  
Author(s):  
R. Sugie ◽  
K. Inoue ◽  
M. Yoshikawa
Keyword(s):  
Quantitative Analysis ◽  
Radiative Recombination ◽  
Depth Distribution ◽  
Power Devices ◽  
Cross Sectional ◽  
Recombination Centers ◽  
Silicon Power Devices

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

2021 ◽  
Vol 118 (2) ◽  
pp. 021102
Author(s):  
Dong-Pyo Han ◽  
Ryoto Fujiki ◽  
Ryo Takahashi ◽  
Yusuke Ueshima ◽  
Shintaro Ueda ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting ◽  
Recombination Centers

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Parafoveal OCT Angiography Features in Diabetic Patients without Clinical Diabetic Retinopathy: A Qualitative and Quantitative Analysis

2017 ◽  
Vol 2017 ◽  
pp. 1-14 ◽  
Author(s):  
Mathilde M. Goudot ◽  
Anne Sikorav ◽  
Oudy Semoun ◽  
Alexandra Miere ◽  
Camille Jung ◽  
...  
Keyword(s):  
Diabetic Retinopathy ◽  
Quantitative Analysis ◽  
Capillary Density ◽  
Oct Angiography ◽  
Foveal Avascular Zone ◽  
Diabetic Patients ◽  
Cross Sectional ◽  
The Mean ◽  
Fundus Photographs ◽  
And Gender

Purpose. To evaluate the capacity of OCT angiography (OCTA) for detecting infraclinical lesions in parafoveal capillaries in diabetic patients without diabetic retinopathy (DR). Methods. This prospective observational cross-sectional case-control study analyzed the superficial and deep capillary plexuses (SCP and DCP) on macular OCTA scans (3 × 3 mm) centered on the fovea. We compared 22 diabetic patients (34 eyes included) without DR diagnosis on color fundus photographs, with 22 age- and gender-matched nondiabetic controls (40 eyes included). Qualitative analysis concerned morphological ischemic capillary alterations. Quantitative analysis measured foveal avascular zone (FAZ) size, parafoveal capillary density, and enlargement coefficient of FAZ between SCP and DCP. Results. Neither the qualitative nor quantitative parameters were significantly different between both groups. No microaneurysms or venous tortuosity was observed in any of the analyzed images. On the SCP, the mean FAZ area was 0.322 ± 0.125 mm2 in diabetic patients and 0.285 ± 0.150 mm2 in controls, P=0.31. On the DCP, the mean FAZ area was 0.444 ± 0.153 mm2 in cases and 0.398 ± 0.138 mm2 in controls, P=0.20. Conclusion. OCTA did not detect infraclinical qualitative or quantitative differences in parafoveal capillaries of diabetic patients without DR in comparison with nondiabetic controls.

Photoluminescence Study of Radiative Recombination in Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Ground State ◽  
Radiative Recombination ◽  
Single Electron ◽  
Photoluminescence Study ◽  
Recombination Centre ◽  
Electron Center ◽  
Recombination Centers

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

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