Analysis of Processes of Mass and Heat Transport During Gas Phase Epitaxy of a Semiconductor Structures with Rotating Disk Substrate Holder in a Horizontal Reactor

2017 ◽  
Vol 9 (4) ◽  
pp. 351-357
Author(s):  
E. L. Pankratov ◽  
E. A. Bulaeva
Keyword(s):  
Gas Phase ◽  
Heat Transport ◽  
Rotating Disk ◽  
Substrate Holder ◽  
Semiconductor Structures ◽  
Horizontal Reactor ◽  
Disk Substrate

Convective diffusion from a gas phase to a rotating disk

2016 ◽  
Vol 57 (4) ◽  
pp. 637-645 ◽  
Author(s):  
E. L. Pankratov ◽  
P. B. Boldyrevskii
Keyword(s):  
Gas Phase ◽  
Convective Diffusion ◽  
Rotating Disk

Atomie Layer Epitaxy ia a Rotating Disk Reactor

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Liu ◽  
P. A. Zawadzki ◽  
P. E. Norris
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Atomic Layer ◽  
Rotating Disk ◽  
Atomic Layer Epitaxy ◽  
Process Window ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Group Iii ◽  
Reaction Complex

ABSTRACTCurrent difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.

scholarly journals Gas-Phase Silicon Atom Densities in the Chemical Vapor Deposition of Silicon from Silane

1993 ◽  
Vol 334 ◽  
Author(s):  
Michael E. Coltrin ◽  
William G. Breiland ◽  
Pauline Ho
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Silicon Atom ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Number Density ◽  
Atom Number ◽  
Density Profiles ◽  
Calculated Density

AbstractSilicon atom number density profiles have been measured using laser-induced fluorescence during the chemical vapor deposition of silicon from silane. Measurements were obtained in a rotating-disk reactor as a function of silane partial pressure and the amount of hydrogen added to the carrier gas. Absolute number densities were obtained using an atomic absorption technique. Results were compared with calculated density profiles from a model of the coupled fluid flow, gas-phase and surface chemistry for an infinite-radius rotating disk. An analysis of the reaction mechanism showed that the unimolecular decomposition of SiH2 is not the dominant source of Si atoms. Profile shapes and positions, and all experimental trends are well matched by the calculations. However, the calculated number density is up to 100 times smaller than measured.

Complex Flow and Gas-Phase Reactions in a Horizontal Reactor for GaN Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6180-6190 ◽  
Author(s):  
Kenji Harafuji ◽  
Yoshiaki Hasegawa ◽  
Akihiko Ishibashi ◽  
Ayumu Tsujimura ◽  
Isao Kidoguchi ◽  
...  
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Complex Flow ◽  
Gas Phase Reactions ◽  
Horizontal Reactor

Multiwafer Production of Long Wavelength Epitaxial Material

1990 ◽  
Vol 216 ◽  
Author(s):  
M. Heyen ◽  
D. Schmitz ◽  
G. Strauch ◽  
H. JÜrgensen
Keyword(s):  
Gas Phase ◽  
Low Pressure ◽  
Long Wavelength ◽  
Horizontal Reactor ◽  
Compositional Uniformity

Low pressure MOVPE in a horizontal reactor has proven to be capable of yielding uniform InP, GalnAs and GaInAsP layers [1, 2]. However, the complexity of some devices as MQW lasers and HEMTs require even further improvement in thickness and compositional uniformity. This can be achieved by using the technique of sub-strate rotation to overcome gas phase depletion problems and geometry related non uniformities.

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