Multiwafer Production of Long Wavelength Epitaxial Material
Keyword(s):
Low pressure MOVPE in a horizontal reactor has proven to be capable of yielding uniform InP, GalnAs and GaInAsP layers [1, 2]. However, the complexity of some devices as MQW lasers and HEMTs require even further improvement in thickness and compositional uniformity. This can be achieved by using the technique of sub-strate rotation to overcome gas phase depletion problems and geometry related non uniformities.
1997 ◽
Vol 11
(1)
◽
pp. 124-132
◽
Keyword(s):
Keyword(s):
Keyword(s):
1990 ◽
Vol 56
(524)
◽
pp. 892-897
Keyword(s):
Keyword(s):
1987 ◽
Vol 42
(3)
◽
pp. 301-307
◽
Keyword(s):
Keyword(s):
1988 ◽
Vol 135
(9)
◽
pp. 2378-2379
◽
Keyword(s):