scholarly journals Hybrid Realisation of High Precision Analog Conversion Modules

1978 ◽  
Vol 5 (1) ◽  
pp. 49-53 ◽  
Author(s):  
L. Kun
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
High Precision ◽  
High Stability ◽  
Frequency Converter ◽  
Active Components ◽  
Thin Film Technology ◽  
Manufacturing Methods ◽  
Optimum Cost ◽  
Stability And Accuracy

High precision analog modules are manufactured using film technologies. Components which are critical as regards operation and stability are made by thin film technology, additional elements and interconnection of active components are made using thick film technology.Using these two separate manufacturing methods to obtain high stability and accuracy, optimum cost and yield can be achieved. To illustrate these facts, two circuits are discussed in detail, a voltage to frequency converter and a log amplifier.

scholarly journals A Study on Effect of Line Width, Composition and Firing Temperature on the Microstripline Properties

2000 ◽  
Vol 23 (3) ◽  
pp. 163-173 ◽  
Author(s):  
Sunit Rane ◽  
Vijaya Puri
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Line Width ◽  
Firing Temperature ◽  
Thick Films ◽  
Alumina Substrate ◽  
Thin Film Technology ◽  
Binder Composition ◽  
Cu Thin Film ◽  
Ku Band

The transmittance and reflectance of microstriplines of different widths, fabricated by thick film and thin film technology are studied in the X and Ku band (8–18 GHz). The fritless thick film Ag pastes with different binder composition was formulated indigenously and screen-printed the microstriplines on alumina substrate. These microstriplines were compared with the microstriplines made from ESL (USA) pastes and also Cu thin film circuits. The effect of line width, composition and firing temperature on the thick film microstriplines was investigated. The transmittance of all the indigenously prepared Ag thick film paste compared well with microstriplines prepared with ESL pastes. All these thick film pastes gave good transmittance upto 18.0 GHz. The results indicate firing at 700℃ gives best films, and also 18 mil or 20-mil line width is more suitable than conventional 25-mil line width if thick films are used for metallization upto 18.0 GHz.

scholarly journals New Thick-Film Microwave Elements for Microwave Integrated Circuits

1983 ◽  
Vol 11 (1) ◽  
pp. 1-20 ◽  
Author(s):  
Janusz J. Gondek ◽  
Marek A. Wójcicki ◽  
Jan Cąber
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Mathematical Models ◽  
Thick Film ◽  
Technological Process ◽  
Operating Conditions ◽  
Microwave Integrated Circuits ◽  
Thin Film Technology ◽  
Strip Lines ◽  
Constituent Elements

The realisation of microwave integrated circuits consisting of numerous elements and components, both passive and active, takes place in steps. Initially, experimental constituent elements are designed and constructed, and only after it is found that they satisfy the operating conditions, can they be integrated into a sub-system. As a result of this we obtain complicated Microwave Integrated Circuits (MICs). Initially however one has to construct basic MIC elements such as: resonators, filters, couplings, Y branch joints, circulators, etc. During research over several years carried out at the Microelectronics Department, Institute of Electronics, of the Mining and Metallurgical University of Kraków and devoted to the application of thick-film technology to MIC, the authors have devised and constructed several microwave elements using strip-lines and this paper reports of the results of their studies.Pastes produced by DU PONT/USA were used. New mathematical models for designing thick-film microwave elements have been elaborated using computer techniques. These programmes have differed from analogous ones for MIC realized by thin-film technology can be adapted, after certain modifications, to the realisation of MIC. The authors have introduced new technological operations, not used so far, to the technological process. This has made possible the production of thick-film microwave elements with parameters comparable to those obtained in thin-film technology.

Materials and Processes for High Functionality Hybrid Circuit Packages

1987 ◽  
Vol 108 ◽  
Author(s):  
Donald Jaffe
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Polymeric Materials ◽  
Ceramic Substrates ◽  
Thin Film Technology ◽  
Hybrid Circuit ◽  
Thick Film Technology

ABSTRACTMaterials and processes used for high functionality hybrid circuit packages based on ceramic substrates are described. Emphasis is on hybrid circuits used for telecommunications and related applications. Examples include packages utilizing thin film technology, thick film technology and combinations of the two technologies. Various thick and thin multilayer approaches to achieve high interconnection density are discussed. These employ a variety of metal conducting systems in conjunction with glasses and/or polymeric materials as dielectric insulating layers.

Development of multi-functional sensors in thick-film and thin-film technology

2000 ◽  
Vol 11 (8) ◽  
pp. 1111-1118 ◽  
Author(s):  
Wenmin Qu ◽  
Ray Green ◽  
Mike Austin
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Thin Film Technology

Research on the realization of high precision RC array through IC thin film technology

2008 ◽  
Author(s):  
Fangkui Sun ◽  
Wei Jiang ◽  
Di Wu ◽  
Shoutao Zhang
Keyword(s):  
Thin Film ◽  
High Precision ◽  
Thin Film Technology

scholarly journals Current Noise in Thick and Thin Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Measured Data ◽  
Measuring Circuit ◽  
Current Noise ◽  
High Quality ◽  
Thin Film Resistors

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

Effect of Film Thickness on Fatigue Strength of TiAl Alloy Coated with TiAlN Film at Elevated Temperature

2005 ◽  
Vol 297-300 ◽  
pp. 1446-1451 ◽  
Author(s):  
Takeshi Kasuya ◽  
Hideto Suzuki
Keyword(s):  
Thin Film ◽  
Fatigue Strength ◽  
Film Thickness ◽  
Thick Film ◽  
Physical Vapor Deposition ◽  
Tial Alloy ◽  
Testing Machine ◽  
Intermetallic Alloy ◽  
Fracture Control ◽  
The Difference

The fatigue strength of TiAl intermetallic alloy coated with TiAlN film was studied in vacuum at 1073K using a SEM-servo testing machine. In addition, three kinds of TiAlN films were given by physical vapor deposition (1, 3, and 10μ m). The fatigue strength of 3μ m was highest. Also, the fatigue strength of 1μ m was lowest. From this result, existence of optimum film thickness was suggested because the difference of fatigue strength arose in each film thickness. The justification for existence of optimum film thickness is competition of 45-degree crack and 90-degree crack. The 45-degree crack is phenomenon seen in the thin film (1μ m), and is caused by plastic deformation of TiAl substrate. The 45-degree crack is the factor of the fatigue strength fall by the side of thin film. In contrast, the 90-degree crack is phenomenon in the thick film (10μ m), and is caused as result of reaction against load to film. The 90-degree crack is the factor of the fatigue strength fall by the side of thick film. In conclusion, the optimum film thickness can perform meso fracture control, and improves fatigue strength.

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