scholarly journals Scratch-Profiles Study in Thin Films Using SEM and EDS

1984 ◽  
Vol 11 (3) ◽  
pp. 237-241 ◽  
Author(s):  
M. El-Shabasy ◽  
L. Pogány ◽  
G. Konczos ◽  
E. Hajtó ◽  
B. Szikora
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Critical Load ◽  
Conventional Method ◽  
Experimental Work ◽  
Measuring Method ◽  
Shearing Stress ◽  
Line Profiles ◽  
X Ray ◽  
Thickness Profile

The adhesion of evaporated or sputtered thin films to substrates is one of the most important characterising parameters in their fabrication. It is a conventional method to scratch the films using a stylus and evaluate the shearing stress, which is proportional to the energy of adhesion. For the evaluation it is necessary to determine the so-called critical load and the profile of the scratch.The aim during this experimental work was to find a method to evaluate the scratch profile from the X-ray-line profile and SEM pictures. From SEM pictures, the lateral dimensions and surface morphology of the scratches were studied. The thickness was also studied from X-ray-line profiles.In this paper the thickness profile measuring method and the conclusion for the scratch method are discussed.

Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

2012 ◽  
Vol 488-489 ◽  
pp. 76-81 ◽  
Author(s):  
Subramani Shanmugan ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Shape Analysis ◽  
Structural Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Studies ◽  
Sb Doping ◽  
Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

Biocompatibility Studies of the Nitinol Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fibroblast Cell ◽  
Vero Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fetal Bovine ◽  
Fibroblast Cell Lines

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.

Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3695-3697 ◽  
Author(s):  
J. Gao ◽  
L. Kang ◽  
H. Y. Wong ◽  
Y. L. Cheung ◽  
J. Yang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Large Range ◽  
Superconducting Films ◽  
Buffer Layers ◽  
Epitaxial Thin Films ◽  
Average Surface Roughness ◽  
X Ray ◽  
Flat Interface ◽  
The Eu

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu 2 CuO 4/ YSZ (yttrium-stabilized ZrO 2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu 2 CuO 4/ YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

Annealing effect on in-plane alignment and surface morphology of epitaxial Bi4Ti3O12 thin films prepared by the chemical solution deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2519-2525 ◽  
Author(s):  
K. Hwang ◽  
Y. Park
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Chemical Solution Deposition ◽  
Three Dimensional ◽  
Annealing Effect ◽  
Chemical Solution ◽  
Epitaxial Relationship ◽  
Solution Deposition ◽  
X Ray ◽  
Lower Temperature

Bi4Ti3O12 thin films were grown epitaxially on SrTiO3(100) substrates by chemical solution deposition using metal naphthenates as starting materials. Homogeneous Bi–Ti solution with toluene was spin-coated onto the substrates and pyrolyzed at 500 °C for 10 min in air. Highly c-axis-oriented Bi4Ti3O12 thin films were crystallized by annealing pyrolyzed films at ≥650 °C. The x-ray pole-figure analysis indicated that the Bi4Ti3O12 thin films have an epitaxial relationship with the SrTiO3(100) substrates. The surface morphology of the films annealed at lower temperature, i.e., 650 °C, exhibited flat and smooth surfaces, while films annealed at higher temperatures, i.e., 750 and 800 °C, were characterized by three-dimensional outgrowth.

scholarly journals Pressure and Temperature Effects on Stoichiometry and Microstructure of Nitrogen-Rich TiN Thin Films Synthesized via Reactive Magnetron DC-Sputtering

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
E. Penilla ◽  
J. Wang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Xrd Analysis ◽  
Preferred Orientation ◽  
Reactive Magnetron ◽  
Sem Images ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Tin Thin Films

Nitrogen-rich titanium nitride (TiN) thin films containing excess nitrogen up to 87.0 at.% were produced on (100) Si substrates via the reactive magnetron DC-sputtering of a commercially available 99.995 at.% pure Ti target within an argon-nitrogen (Ar-N2) atmosphere with a 20-to-1 gas ratio. The process pressure (PP) and substrate temperature (TS) at which deposition occurred were varied systematically between 0.26 Pa–1.60 Pa and between15.0∘C–600∘C, respectively, and their effects on the chemical composition, surface morphology, and preferred orientation were characterized by energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). The EDS analysis confirms increasing nitrogen content with increasingPPandTS. The SEM images reveal a uniform and crystallized surface morphology as well as a closely packed cross-sectional morphology for all crystalline films and a loosely packed cross-sectional morphology for amorphous films. Films produced at lowerPPandTShave a pyramidal surface morphology which transitions to a columnar and stratified structure asPPandTSincrease. The XRD analysis confirms the existence of only theδ-TiN phase and the absence of other nitrides, oxides, and/or sillicides in all cases. It also indicates that at lowerPPandTS, the preferred orientation relative to the substrate is along the (111) planes, and that it transitions to a random orientation along the (200), (220), and (311) planes asPPandTSincrease and these results correlate with and qualify those observed by SEM.

scholarly journals Structural and Surface Morphology Studies of La0.67Ba0.33(Mn1−xAlx)O3Thin Films Prepared by Sol-Gel Method

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
H. Abdullah ◽  
M. S. Zulfakar
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Sol Gel ◽  
Rhombohedral Structure ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Xrd Patterns ◽  
Nanocrystalline Thin Films ◽  
Prominent Peak

Nanocrystalline thin films of La0.67Ba0.33(Mn1−xAlx)O3(x=0.00,0.05,0.10, and 0.15) were prepared by sol-gel method, as a starter material consisting of La2O3, BaNO3, Mn(NO3), and Al(NO3). The molarities of La2O3and BaNO3are constant, while molarities of Mn(NO3) and Al(NO3) were calculated based on stoichiometric theory. Thin films were deposited on quartz glass substrate by using spin coating technique and sintered at 700°C. X-ray diffractometer (XRD) patterns showed that these thin films consist of pure La0.67Ba0.33(Mn1−xAlx)O3phase where the most prominent peak is observed at (104). All the samples display a rhombohedral structure. Scanning electron microscopy (SEM) showed that aggregation of small particles occurred more in doped films than in undoped films. The surface morphology has been studied by using AFM, and the roughness of thin films was analyzed.

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

Nanoindention studies of DC sputtered Cu and Cu/Cr thin films

2001 ◽  
Vol 672 ◽  
Author(s):  
G. Wei ◽  
J. Du ◽  
A. Rar ◽  
J. A. Barnard
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Morphology ◽  
Film Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Grain Size And Orientation

ABSTRACTThe nanoindentation behavior of DC magnetron sputtered 10 nm Cu and 10 nm Cu/2 nm Cr thin films deposited on Si (100) has been studied using a Hysitron nanomechanical system. X- ray diffraction and X-ray reflectivity were used to measure the film structure and film thickness, respectively. The grain size and orientation of Cu and Cu/Cr thin films were measured by TEM. Atomic force microscopy (AFM) was used to evaluate the surface morphology and roughness. At the same load, the nanoindentaion displacement of Cu/Cr is smaller than that for Cu, i.e., the 2nm thick Cr underlayer enhances the hardness of Cu. X-ray, TEM, and AFM results show that the grain size of Cu/Cr (< 15 nm) is actually larger than Cu (∼ 3 nm) indicating that the inverse Hall-Petch relationship may be operative.

The Surface Morphology and Electrical Properties of Nanostructured CuI Thin Films by Intermittently Sprayed Solution Concentration

2012 ◽  
Vol 576 ◽  
pp. 305-308
Author(s):  
Muhamad Nur Amalina ◽  
N.A. Rasheid ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Solution Concentration ◽  
Illumination Condition ◽  
X Ray ◽  
Nanostructured Particles ◽  
Spraying Method ◽  
Scanning Electron

The CuI thin films were prepared by a spraying method with acetonitirile as a solvent and CuI as reagents. The parameter investigated in this research is the effect of spraying method either continuously or intermittently sprayed. The influence of spraying method and solution concentration on the surface morphology and electrical properties of CuI thin films were investigated by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and 2 point probe I-V measurement. Nanoparticle CuI was observed for all the thin films prepared. The EDX spectrum confirmed the existence of Cu and I elements. The resistivity of order 10-1 to 100 Ω cm was obtained for the CuI thin film deposited by the spraying technique. The CuI thin films also showed a photoresponse characteristic when measured under illumination condition. These results imply that the prepared CuI thin film deposited by spraying technique exhibit excellent conductivity with nanostructured particles seen.

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