scholarly journals Evolution of Surface Morphology and Chemistry in ZnO Thin Films and Steel Surfaces studied by Synchrotron X-ray Spectroscopy and Imaging

2016 ◽  
Author(s):  
Hua Jiang ◽  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Zno Thin Films ◽  
X Ray ◽  
Steel Surfaces

scholarly journals Production of ZnO and CdO-ZnO thin Films by Extraction–Pyrolytic Method

2016 ◽  
Vol 53 (3) ◽  
pp. 57-66
Author(s):  
A. Cvetkovs ◽  
O. Kiselova ◽  
U. Rogulis ◽  
V. Serga ◽  
R. Ignatans
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Quartz Glass ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Size

Abstract The extraction-pyrolytic method has been applied to produce the ZnO and CdO-ZnO thin films on glass and quartz glass substrates. According to X-ray diffraction measurements, the ZnO and CdO phases have been produced with an average size of crystallites about 8–42 nm in the films. The thickness of the layers measured by a profilometer has been up to 150 nm. The surface morphology measurements show that the surface of the films may be rough and non-continuous. The SEM results confirm the dependence between the preparation procedure and the quality of the thin film.

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Scratch-Profiles Study in Thin Films Using SEM and EDS

1984 ◽  
Vol 11 (3) ◽  
pp. 237-241 ◽  
Author(s):  
M. El-Shabasy ◽  
L. Pogány ◽  
G. Konczos ◽  
E. Hajtó ◽  
B. Szikora
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Critical Load ◽  
Conventional Method ◽  
Experimental Work ◽  
Measuring Method ◽  
Shearing Stress ◽  
Line Profiles ◽  
X Ray ◽  
Thickness Profile

The adhesion of evaporated or sputtered thin films to substrates is one of the most important characterising parameters in their fabrication. It is a conventional method to scratch the films using a stylus and evaluate the shearing stress, which is proportional to the energy of adhesion. For the evaluation it is necessary to determine the so-called critical load and the profile of the scratch.The aim during this experimental work was to find a method to evaluate the scratch profile from the X-ray-line profile and SEM pictures. From SEM pictures, the lateral dimensions and surface morphology of the scratches were studied. The thickness was also studied from X-ray-line profiles.In this paper the thickness profile measuring method and the conclusion for the scratch method are discussed.

Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

2012 ◽  
Vol 488-489 ◽  
pp. 76-81 ◽  
Author(s):  
Subramani Shanmugan ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Shape Analysis ◽  
Structural Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Studies ◽  
Sb Doping ◽  
Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

scholarly journals EPR Spectroscopy of Different Sol Concentration Synthesized Nanocrystalline-ZnO Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Manju Arora ◽  
Rayees A. Zargar ◽  
S. D. Khan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Film Surface ◽  
Epr Spectra ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Film ◽  
Resonance Signal ◽  
X Ray ◽  
Impurity Defects

Nanocrystalline zinc oxide (nc-ZnO) thin films were grown on p-type silicon substrate through spin coating by sol-gel process using different sol concentrations (10 wt.%, 15 wt.%, and 25 wt.%). These films were characterized by high resolution nondestructive X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDS) attachment, and electron paramagnetic resonance (EPR) techniques to understand variations in structural, morphological, and oxygen vacancy with respect to sol concentration. The film surface morphology changes from nanowall to nanorods on increasing sol concentration. EPR spectra revealed the systematic variation from ferromagnetic to paramagnetic nature in these nc-ZnO films. The broad EPR resonance signal arising from the strong dipolar-dipolar interactions among impurity defects present in nc-ZnO film deposited from 10 wt.% sol has been observed and a single strong narrow resonance signal pertaining to oxygen vacancies is obtained in 25 wt.% sol derived nc-ZnO film. The concentrations of impurity defects and oxygen vacancies are evaluated from EPR spectra, necessary for efficient optoelectronic devices development.

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