Annealing effect on in-plane alignment and surface morphology of epitaxial Bi4Ti3O12 thin films prepared by the chemical solution deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2519-2525 ◽  
Author(s):  
K. Hwang ◽  
Y. Park
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Chemical Solution Deposition ◽  
Three Dimensional ◽  
Annealing Effect ◽  
Chemical Solution ◽  
Epitaxial Relationship ◽  
Solution Deposition ◽  
X Ray ◽  
Lower Temperature

Bi4Ti3O12 thin films were grown epitaxially on SrTiO3(100) substrates by chemical solution deposition using metal naphthenates as starting materials. Homogeneous Bi–Ti solution with toluene was spin-coated onto the substrates and pyrolyzed at 500 °C for 10 min in air. Highly c-axis-oriented Bi4Ti3O12 thin films were crystallized by annealing pyrolyzed films at ≥650 °C. The x-ray pole-figure analysis indicated that the Bi4Ti3O12 thin films have an epitaxial relationship with the SrTiO3(100) substrates. The surface morphology of the films annealed at lower temperature, i.e., 650 °C, exhibited flat and smooth surfaces, while films annealed at higher temperatures, i.e., 750 and 800 °C, were characterized by three-dimensional outgrowth.

(Pb, Sm)TiO3 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING A Bi2Ti2O7 BUFFER LAYER

2004 ◽  
Vol 11 (02) ◽  
pp. 211-215
Author(s):  
CHANGHONG YANG ◽  
ZHUO WANG ◽  
XIUFENG CHENG ◽  
HONGXIA LI ◽  
JIANRU HAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Hysteresis Curve ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Atomic Force ◽  
Clockwise Hysteresis

A thin-film bilayer structure consisting of polycrystalline Pb 0.85 Sm 0.1 TiO 3 and preferentially (111)-oriented Bi 2 Ti 2 O 7 were prepared using the chemical solution deposition technique. Thin films were deposited by spin-coating. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied by using an atomic force microscope. The films exhibit a good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 3.5 V. The accumulation capacitance and dielectric loss decrease with the increased annealing temperature. The ( Pb, Sm ) TiO 3/ Bi 2 Ti 2 O 7 films in the "on" and "off" states are relatively stable.

Synthesis of Oriented BiFeO3 Thin Films by Chemical Solution Deposition: Phase, Texture, and Microstructural Development

2005 ◽  
Vol 20 (8) ◽  
pp. 2127-2139 ◽  
Author(s):  
F. Tyholdt ◽  
S. Jørgensen ◽  
H. Fjellvåg ◽  
A.E. Gunnæs
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Chemical Solution Deposition ◽  
Microstructural Development ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Solution Deposition ◽  
X Ray ◽  
Glass Substrates

Textured, thin films of BiFeO3 (∼120 nm thickness) were synthesized by chemical solution deposition from a mixture of iron- and bismuth- 2-methoxyethoxides on Si(100)/SiO2/TiO2/Pt substrates. The use of alkoxides ensured good homogeneity and a low degree of organics that further facilitated low crystallization temperatures. Crystalline films were according to x-ray diffraction already obtained at 480 °C. Precursor characteristics were investigated using thermogravimetry and differential scanning calorimetry, whereas phase purity, microstructure and film topography were examined by x-ray diffraction, transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. A small (10%) Bi excess was found necessary to obtain dense, pore-free films. Such additions also prevented decomposition of BiFeO3 at high temperatures. The observed (012) texture is believed to originate from the growth mechanism as no relation to the substrate is found. This is also confirmed by observing (012) texture for films on glass substrates.

Epitaxial Growth of ZnO Thin Films on SiC Prepared by Chemical Solution Deposition

2006 ◽  
Vol 957 ◽  
Author(s):  
Young-Sik Park ◽  
Young-Sun Jeon ◽  
Kyung-Ok Jeon ◽  
Bo-An Kang ◽  
Kyu-Seog Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Mechanical Stability ◽  
Low Cost ◽  
Zno Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Probe Microscope

ABSTRACTZinc oxide (ZnO) thin films have emerged as one of the most promising oxide materials owing to their optical and electrical properties, together with their high chemical and mechanical stability. Chemical solution deposition (CSD) is attractive technique for obtaining ZnO thin films and has the advantages of easy control of the film composition and easy fabrication of a larger-area thin film at low cost. In this work, epitaxial ZnO thin films on SiC substrate were prepared by using a CSD method with a zinc naphthenate precursor. Precursor films were pyrolyzed at 500°C for 10 min in air and finally annealed at 600°C, 700°C, 800°C and 900°C for 30 min in air. Crystallinity and in-plane alignment of the films were investigated by X-ray diffraction theta-2 theta scan and pole-figure analysis. Scanning electron microscope, scanning probe microscope, and He-Cd laser (325 nm) are used to detect the surface morphology and photoluminescence of the films. The effects of annealing temperature on crystallinity and epitaxy of the films will be fully discussed on the basis of the results of X-ray diffraction analysis.

scholarly journals Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

2014 ◽  
Vol 1633 ◽  
pp. 25-33 ◽  
Author(s):  
D. S. L. Pontes ◽  
F. M Pontes ◽  
Marcelo A. Pereira-da-Silva ◽  
O. M. Berengue ◽  
A. J. Chiquito ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Single Crystal ◽  
Chemical Solution Deposition ◽  
Deposition Method ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Chemical Solution Deposition Method

ABSTRACTLaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces.

Effect of 3d Transition Metals Addition on the Ferroelectric Properties in Bi Ferrite Thin Films

2007 ◽  
Vol 1034 ◽  
Author(s):  
Hiroshi Naganuma ◽  
Jun Miura ◽  
Soichiro Okamura
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Diffraction Peaks ◽  
Ferrite Thin Films ◽  
Co Addition

AbstractCr, Mn, Co, Ni and Cu of 5 at % s added BiFeO3 films were fabricated by chemical solution deposition on 111-textured Pt/Ti/SiO2/Si(100) substrates. Only the diffraction peaks attributed to BiFeO3 structure could obtain except the Ni and Cr additions. The BiFeO3 films became almost amorphous by adding Ni, and non ferroelectric Bi7CrO12.5 phase was formed by adding Cr. AFM images indicated the surface morphology of the films was drastically changed by the additives. The leakage current was reduced by adding Mn, Cu and Co, although the electric coercive field increased in the case of Co addition. Therefore, it could be concluded that Mn and Cu additives improved not only the leakage current properties but also the ferroelectric properties in the course of CSD process. It should be noted that this is the first report showing the improvement of ferroelectricity of BiFeO3 films by adding Cu.

PREPARATION AND CHARACTERISTICS OF Sm-DOPED Bi2Ti2O7 THIN FILMS

2007 ◽  
Vol 14 (01) ◽  
pp. 147-150 ◽  
Author(s):  
DONGMEI YANG ◽  
CHANGHONG YANG ◽  
CHUNXUE YUAN ◽  
XIN YIN ◽  
JIANRU HAN
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dielectric Constant And Loss

Crack-free Sm-doped Bi 2 Ti 2 O 7( Sm : Bi 2 Ti 2 O 7) thin films with a strong (111) orientation have been prepared on p-Si (111) by chemical solution deposition (CSD). The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The dielectric constant and loss factor at different frequencies were also evaluated at room temperature. Their insulation was studied, too. The films exhibit better insulating property than does the pure Bi 2 Ti 2 O 7.

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