scholarly journals Pressure and Temperature Effects on Stoichiometry and Microstructure of Nitrogen-Rich TiN Thin Films Synthesized via Reactive Magnetron DC-Sputtering

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
E. Penilla ◽  
J. Wang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Xrd Analysis ◽  
Preferred Orientation ◽  
Reactive Magnetron ◽  
Sem Images ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Tin Thin Films

Nitrogen-rich titanium nitride (TiN) thin films containing excess nitrogen up to 87.0 at.% were produced on (100) Si substrates via the reactive magnetron DC-sputtering of a commercially available 99.995 at.% pure Ti target within an argon-nitrogen (Ar-N2) atmosphere with a 20-to-1 gas ratio. The process pressure (PP) and substrate temperature (TS) at which deposition occurred were varied systematically between 0.26 Pa–1.60 Pa and between15.0∘C–600∘C, respectively, and their effects on the chemical composition, surface morphology, and preferred orientation were characterized by energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). The EDS analysis confirms increasing nitrogen content with increasingPPandTS. The SEM images reveal a uniform and crystallized surface morphology as well as a closely packed cross-sectional morphology for all crystalline films and a loosely packed cross-sectional morphology for amorphous films. Films produced at lowerPPandTShave a pyramidal surface morphology which transitions to a columnar and stratified structure asPPandTSincrease. The XRD analysis confirms the existence of only theδ-TiN phase and the absence of other nitrides, oxides, and/or sillicides in all cases. It also indicates that at lowerPPandTS, the preferred orientation relative to the substrate is along the (111) planes, and that it transitions to a random orientation along the (200), (220), and (311) planes asPPandTSincrease and these results correlate with and qualify those observed by SEM.

Dielectric and Ferroelectric Properties of Modified BiFeO3-PbTiO3 Thin Films Derived from Sol-gel Processing

2003 ◽  
Vol 784 ◽  
Author(s):  
JinRong Cheng ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant

ABSTRACTIn this paper, thin films of La- modified (Bi,La)FeO3-PbTiO3 (BLF-PT) morphotropic phase boundary (MPB) solid solutions have been prepared by using sol-gel processing. A thin Pb(Zr,Ti)O3 (PZT) template layer was introduced to make BLF-PT thin films adhere tightly to the platinized silicon (Pt/Ti/SiO2/Si) substrate. X-ray diffraction (XRD) analysis revealed that BLF-PT thin films were of the perovskite structure without detectable pyrochlore phase annealing at 650–750°C. The cross sectional and plain view images of or our specimen were observed by using the scan electrical microscope (SEM). The room temperature dielectric constant K and tanδ were of ∼800 and 4% respectively, for BLF-PT thin films using a measurement frequency of 1 kHz. Our preliminary experiments indicated that the sol-gel derived BLF-PT thin films have good insulation resistance and measurable dielectric and ferroelectric responses.

The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering

2012 ◽  
Vol 567 ◽  
pp. 158-161
Author(s):  
Yang Yang Li ◽  
Jun Jie Hao ◽  
Xiao Jia Wang ◽  
Rui Xin Wang ◽  
Zhi Meng Guo
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Electric Resistivity ◽  
Sem Images ◽  
Working Pressure ◽  
X Ray ◽  
Annealing Temperatures ◽  
Xrd Patterns ◽  
Sic Films

SiC films were prepared by mid-frequency (MF) magnetron sputtering with two targets (SiC and C) on monocrystalline Si(100) and Al2O3 substrates. During the study, different annealing temperatures and working pressures were set. The surface morphology of SiC films was studied by SEM, while structure was characterized using a conventional X-ray diffractometer. SEM images had shown the surface morphology of SiC films was related to substrates. It was also found that working pressure had a big influence on the structure of SiC films through the XRD patterns. The film was mainly based on 3C-SiC when working pressure wass 0.3Pa, and 4H-SiC when 0.6 Pa. Another conclusion was that the resistivity of 4H-SiC was larger than that of 3C-SiC.

Effect of N2 Flow Rates on Properties of Nanostructured TiAlN Thin Films Prepared by Reactive Magnetron Co-Sputtering

2013 ◽  
Vol 770 ◽  
pp. 161-164 ◽  
Author(s):  
Surasing Chaiyakun ◽  
Areerat Somwangsakul ◽  
Adisorn Buranawong ◽  
Jakrapong Kaewkhao ◽  
Nirun Witit-Anun
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Flow Rate ◽  
Preferred Orientation ◽  
Chemical Compositions ◽  
Reactive Magnetron ◽  
Nitrogen Flow ◽  
Cross Sectional ◽  
Flow Rates ◽  
Structure Surface

The TiAlN thin films with different crystal structure, surface morphology, microstructure and chemical compositions were deposited on Si (100) plane by changing the N2 flow rate from 2 to 10 sccm using co-targeted reactive magnetron sputtering technique in the same process. The effect of nitrogen flow rate on structure and properties of TiAlN thin films was investigated in the study. The films were characterized by X-ray Diffraction (XRD), Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) techniques, respectively. The results show that the crystal structure, surface morphologies microstructure and chemical compositions of the film are strongly depended on the N2 flow rates. The (111) (200) and (220) planes of TiAlN thin films were found with different nitrogen flow rates, one is the preferred orientation of (111) plane that appeared for nitrogen flow rates of 2 sccm, the other one is the preferred orientation of (200) plane for the higher nitrogen flow rates of 4-10 sccm. The crystal size of the films was also determined by Scherrers equation, varied between 13.8 - 35.6 nm. The roughness of the as-deposited films was ranging from 1.8 to 4.3 nm. The chemical compositions of TiAlN were depended on N2 flow rates. The microstructure and cross-sectional SEM analysis revealed that the nanograins were developed and thickness decreased from 381 nm to 131 nm. In addition, the columnar structures were observed for all films.

scholarly journals Investigation on Al Doped Zno Thin Films and its N-Alzno/P-Si Junction Diodes Via Dip Coating and JNSP Techniques

2018 ◽  
Vol 34 (5) ◽  
pp. 2590-2596
Author(s):  
S. Kalidass ◽  
P. Thirunavukkarasu ◽  
M. Balaji ◽  
J. Chandrasekaran
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Sem Images ◽  
X Ray ◽  
Maximum Conductivity ◽  
Jet Nebulizer ◽  
Doped Zno

From this investigation, we find out that the dip coating and jet nebulizer spray pyrolysis (JNSP) techniques are the suitable to fabricate aluminum doped zinc oxide (AlZnO) thin films and the P-N junction diode of n-AlZnO/p-Si at 450°C. Several characterization techniques are used to measure the consequences of Al doping (0, 0.5, 1.0, 1.5, 2.0 and 2.5 wt.%) on structural, optical, electrical and diode properties of ZnO. We recorded that the films were polycrystalline with a hexagonal structure of ZnO by the X-ray diffraction (XRD) analysis. The disparities of the sub-micro sized rod-like structures are observed from the scanning electron microscope (SEM) images. The energy dispersive X-ray spectroscopy (EDX) analysis proved that the elements of Al, Zn and O were presented in the film. The absorbance and band gap energy (Eg) values were ascertained from the ultraviolet visible (UV-vis) analysis. By the current-voltage (I-V) characterization, the maximum conductivity value is detected for 1.5 wt.% of Al doped ZnO film. The I-V measurement for finding the diode parameters of ideality factor (n) and barrier height (Fb) in dark and under light was taken.

scholarly journals Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

2015 ◽  
Vol 33 (1) ◽  
pp. 137-143 ◽  
Author(s):  
Ştefan Ţǎlu ◽  
Sebastian Stach ◽  
Shahoo Valedbagi ◽  
S. Mohammad Elahi ◽  
Reza Bavadi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Titanium Nitride ◽  
Fractal Analysis ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films

AbstractIn this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN) thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100) wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K) in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM) and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K) to 2.66 (at 673 K) and then decreased to 2.33 (at 773 K). The fractal analysis in correlation with the averaged power spectral density (surface) yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

Change of the critical thickness in the preferred orientation of TiN films

1995 ◽  
Vol 10 (3) ◽  
pp. 634-639 ◽  
Author(s):  
U.C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee
Keyword(s):  
Strain Energy ◽  
Unit Volume ◽  
Critical Thickness ◽  
Preferred Orientation ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Cross Sectional ◽  
Tin Films ◽  
Tin Thin Films

Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.

scholarly journals Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Vidya S. Taur ◽  
Rajesh A. Joshi ◽  
Ramphal Sharma
Keyword(s):  
Thin Films ◽  
Annealing Treatment ◽  
Cost Effective ◽  
Peak Position ◽  
Optoelectronic Properties ◽  
Sem Images ◽  
X Ray ◽  
Optical Absorbance ◽  
Air Atmosphere ◽  
Cds Thin Films

The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD) pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX) confirms expected elemental composition in thin films. Scanning electron microscopy (SEM) images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained.I-Vresponse obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2light source.

scholarly journals Scratch-Profiles Study in Thin Films Using SEM and EDS

1984 ◽  
Vol 11 (3) ◽  
pp. 237-241 ◽  
Author(s):  
M. El-Shabasy ◽  
L. Pogány ◽  
G. Konczos ◽  
E. Hajtó ◽  
B. Szikora
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Critical Load ◽  
Conventional Method ◽  
Experimental Work ◽  
Measuring Method ◽  
Shearing Stress ◽  
Line Profiles ◽  
X Ray ◽  
Thickness Profile

The adhesion of evaporated or sputtered thin films to substrates is one of the most important characterising parameters in their fabrication. It is a conventional method to scratch the films using a stylus and evaluate the shearing stress, which is proportional to the energy of adhesion. For the evaluation it is necessary to determine the so-called critical load and the profile of the scratch.The aim during this experimental work was to find a method to evaluate the scratch profile from the X-ray-line profile and SEM pictures. From SEM pictures, the lateral dimensions and surface morphology of the scratches were studied. The thickness was also studied from X-ray-line profiles.In this paper the thickness profile measuring method and the conclusion for the scratch method are discussed.

Sign in / Sign up

Export Citation Format

Share Document