Electrical characterization of MOS capacitors with SiO/sub 2/-TiO/sub 2/ dielectric stack made by room temperature plasma oxidation

2005 ◽  
Author(s):  
H. Baez ◽  
M. Estrada ◽  
J.C. Tinoco
Keyword(s):  
Room Temperature ◽  
Electrical Characterization ◽  
Plasma Oxidation ◽  
Temperature Plasma ◽  
Mos Capacitors

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

Electrical characterization of room temperature humidity sensors in La0.8Sr0.2Fe1−xCuxO3 (x=0, 0.05, 0.10)

2012 ◽  
Vol 38 (4) ◽  
pp. 2865-2872 ◽  
Author(s):  
A. Cavalieri ◽  
T. Caronna ◽  
I. Natali Sora ◽  
J.M. Tulliani
Keyword(s):  
Room Temperature ◽  
Electrical Characterization ◽  
Humidity Sensors

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

2012 ◽  
Author(s):  
Anindita Das ◽  
Sanatan Chattopadhyay ◽  
Goutam K. Dalapati ◽  
Dongzhi Chi ◽  
M. K. Kumar
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Mos Capacitors
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