scholarly journals CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Adam Januszko ◽  
Agnieszka Iwan ◽  
Stanislaw Maleczek ◽  
Wojciech Przybyl ◽  
Iwona Pasternak ◽  
...  
Keyword(s):  
Graphene Layer ◽  
Flexible Substrate ◽  
Copper Substrate ◽  
Main Idea ◽  
Chemical Vapor ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Mechanical Destruction ◽  
Graphene Layers ◽  
Energy Current

The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom™). Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate) (PET) via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD) technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics

2021 ◽  
Vol 21 (5) ◽  
pp. 3165-3170
Author(s):  
Ashish Kumar ◽  
Arathy Varghese ◽  
Shriniwas Yadav ◽  
Mahanth Prasad ◽  
Vijay Janyani ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Ideality Factor ◽  
Indium Tin Oxide ◽  
Flexible Substrate ◽  
Copper Substrate ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Energy Storage Devices ◽  
Influence Of Temperature On ◽  
Cell Energy

The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been deposited and I–V measurement has been done. The effect of operating temperature (300 K to 425 K) on I–V characteristics of the fabricated structure has been measured experimentally. The other diode parameters such as ideality factor and effective barrier height have been derived. The reliability of the heterojunction synthesized is proved by the diode ideality factor of 1.03 attained at 425 K. The excellent C–V characteristics (capacitance of 48pF) of the device prove that the device is an excellent candidate for application as supercapacitors. The fabricated structure can be utilized as an ultraviolet photodetector, solar cell, energy storage devices, etc.

Precise control of chemical vapor deposition graphene layer thickness using NixCu1−x alloys

2015 ◽  
Vol 3 (7) ◽  
pp. 1463-1467 ◽  
Author(s):  
Hyonkwang Choi ◽  
Yeongjin Lim ◽  
Minjeong Park ◽  
Sehui Lee ◽  
Younsik Kang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Layer Thickness ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Chemical Vapor ◽  
Graphene Layers ◽  
Precise Control ◽  
Thermal Chemical Vapor Deposition ◽  
Chemical Vapor Deposition Graphene

We investigated a simple but effective method to precisely control the desired number of graphene layers on the NixCu1−x alloy substrates by thermal chemical vapor deposition.

DOUBLE ATOMIC LAYERS OF GRAPHENE/MONOLAYER h-BN ON Ni(111) STUDIED BY SCANNING TUNNELING MICROSCOPY AND SCANNING TUNNELING SPECTROSCOPY

2002 ◽  
Vol 09 (03n04) ◽  
pp. 1459-1464 ◽  
Author(s):  
TOYOSEI KAWASAKI ◽  
TAKASHI ICHIMURA ◽  
HIROSHI KISHIMOTO ◽  
ADE ASNEIL AKBAR ◽  
TAKASHI OGAWA ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Band Gap ◽  
Graphene Layer ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Interfacial Interaction ◽  
Scanning Tunneling ◽  
Graphene Monolayer ◽  
Tunneling Microscopy

Using STM, we have directly confirmed the incommensurate stacking of double atomic layers of graphene and monolayer h-BN on Ni(111). The formation of a graphene layer weakens the interfacial interaction between monolayer h-BN and Ni(111), resulting in insulating h-BN layers, while a pristine monolayer h-BN on Ni(111) is metallic. The STS spectra of the double atomic layers showed a tunneling character with a band gap of 0.5 eV.

scholarly journals Morphology and properties of the graphene layer on the copper substrate

2015 ◽  
Vol 17 (4) ◽  
pp. 104-108
Author(s):  
Katarzyna Pietrzak ◽  
Wiesława Olesińska ◽  
Cezary Strąk ◽  
Robert Siedlec ◽  
Andrzej Gładki
Keyword(s):  
Mechanical Properties ◽  
Wear Resistance ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Thermal Reduction ◽  
Copper Surface ◽  
Tribological Test ◽  
Graphene Layers ◽  
Reduction Processes

Abstract The aim of the work presented in the article was to clarify controversial comments about anti-corrosion and mechanical properties of graphene coatings, deposited on copper substrates. It was designed special experimental cycle comprising: preparation of graphene forms and copper, the observation of layers Cu / GO (rGO) after the thermal reduction processes and oxidative test in air at 150°C temperature and 350 h in time. The resulting coatings and graphene layers were subjected to tribological test for hardness. The observed differences in the continuity of the coverage copper surface by graphene forms, allowed to understand the macroscopic effect of increased hardness and wear resistance layers rGO/Cu.

Large-scale synthesis of highly aligned nitrogen doped carbon nanotubes by injection chemical vapor deposition methods

2005 ◽  
Vol 20 (2) ◽  
pp. 538-543 ◽  
Author(s):  
J. Liu ◽  
R. Czerw ◽  
D.L. Carroll
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Multiwalled Carbon ◽  
Nitrogen Doped Carbon

In this study, we compare the effects of pyridine (C5H5N) and pyrimidine (C4H4N2) precursors, using ferrocene as a metal source, in the production of nitrogen containing multiwalled carbon nanotubes. Using standard chemical vapor deposition techniques, highly aligned mats of carbon-nitrogen carbon nanotube were synthesized. The maximum nitrogen concentration in these materials is between 1% and 2% when pyridine is used as the precursor and can be increased to 3.2% when pyrimidine is used as the precursor. However, the electronic structure of both materials, as determined using scanning tunneling spectroscopy, suggests that the nitrogen is incorporated into the nanotube lattice in the same way for both precursors.

Electronic structure and ultrafast charge transfer dynamics of phosphorous doped graphene layers on a copper substrate: a combined spectroscopic study

RSC Advances ◽  
2015 ◽  
Vol 5 (91) ◽  
pp. 74189-74197 ◽  
Author(s):  
Dunieskys Gonzalez Larrude ◽  
Yunier Garcia-Basabe ◽  
Fernando Lázaro Freire Junior ◽  
Maria Luiza M. Rocco
Keyword(s):  
Electron Transfer ◽  
Electronic Structure ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Electron Transfer Mechanism ◽  
Graphene Layers ◽  
Doped Graphene ◽  
Charge Transfer Dynamics ◽  
Ultrafast Charge Transfer ◽  
P Type

Spectroscopy characterization on a phosphorous doped graphene layer suggests p-type doping governed by an electron transfer mechanism with a cupper substrate.

Raman Characterization of Nitrogen Doped Multiwalled Carbon Nanotubes

2003 ◽  
Vol 772 ◽  
Author(s):  
S. Webster ◽  
J. Maultzsch ◽  
C. Thomsen ◽  
J. Liu ◽  
R. Czerw ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Multiwalled Carbon ◽  
Multiwalled Nanotubes ◽  
Nitrogen Doped ◽  
Boron Doped ◽  
Donor States

AbstractN-type multi-walled nanotubes were synthesized by nitrogen doping using pyridine and pyridine-melamine mixtures in chemical vapor deposition, and their donor states were verified by Scanning Tunneling Spectroscopy. Tunneling Electron Microscopy reveals small amounts of residual catalyst and Scanning Electron Microscopy show well aligned mats of the Nitrogen doped nanotubes. Nitrogen is present in the lattice of these MWNTs as pyridine structures and CNx structures. Raman scattering measurements were performed as a function of increasing growth temperature and the results compared to previously studied boron doped multiwalled nanotubes.

CVD Growth of Graphene on Three Types of Epitaxial Metal Films on Sapphire Substrate

2011 ◽  
Vol 1284 ◽  
Author(s):  
Katsuya Nozawa ◽  
Nozomu Matsukawa ◽  
Kenji Toyoda ◽  
Shigeo Yoshii
Keyword(s):  
Metal Film ◽  
Graphene Layer ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Metal Films ◽  
Face Centered Cubic ◽  
Graphene Growth ◽  
Graphene Layers ◽  
Complex Crystal Structure ◽  
Face Centered

ABSTRACTGraphene growth by chemical vapor deposition (CVD) was studied on three types of epitaxial metal films with different crystal structures on sapphire. Nickel (face-centered-cubic: fcc), Ru (hexagonal-closed-pack: hcp), and Co (fcc at temperature for graphene growth and hcp at R.T.) were deposited on c-face sapphire substrates and annealed in a furnace for solid phase epitaxial growth. Graphene layers were grown by CVD with methane gas on the epitaxial metal film. The graphene layer uniformity was consistent with the structural simplicity of the metal film. The Ru sample had a single domain in the metal film and the highest graphene uniformity. The Co sample had a very complex crystal structure in the metal film and the poorest uniformity in graphene. The Ni sample had two types of stacking domains in the metal film and the graphene layer was uniform on each domain, but inhomogeneity was observed at domain boundaries.

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