Precise control of chemical vapor deposition graphene layer thickness using NixCu1−x alloys

2015 ◽  
Vol 3 (7) ◽  
pp. 1463-1467 ◽  
Author(s):  
Hyonkwang Choi ◽  
Yeongjin Lim ◽  
Minjeong Park ◽  
Sehui Lee ◽  
Younsik Kang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Layer Thickness ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Chemical Vapor ◽  
Graphene Layers ◽  
Precise Control ◽  
Thermal Chemical Vapor Deposition ◽  
Chemical Vapor Deposition Graphene

We investigated a simple but effective method to precisely control the desired number of graphene layers on the NixCu1−x alloy substrates by thermal chemical vapor deposition.

scholarly journals Electromagnetic Wave Shielding Effectiveness Based on Carbon Microcoil-Polyurethane Composites

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Gi-Hwan Kang ◽  
Sung-Hoon Kim
Keyword(s):  
Electromagnetic Wave ◽  
Chemical Vapor Deposition ◽  
Layer Thickness ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Shielding Effectiveness ◽  
Frequency Range ◽  
Thermal Chemical Vapor Deposition ◽  
Shielding Properties ◽  
Polyurethane Composites

Carbon microcoils (CMCs) were deposited onto Al2O3substrates using C2H2/H2as source gases and SF6as an incorporated additive gas in a thermal chemical vapor deposition system. CMC-polyurethane (PU) composites were obtained by dispersing the CMCs in the PU with a dimethylformamide additive. The electromagnetic wave shielding properties of the CMC-PU composites were examined in the frequency range of 0.25–1.5 GHz. The shielding effectiveness (SE) of the CMCs-PU systematically increases with increasing the content of CMCs and/or the layer thickness. Based on these results, the main SE mechanism for this work was suggested and discussed.

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

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