Electronic structure and ultrafast charge transfer dynamics of phosphorous doped graphene layers on a copper substrate: a combined spectroscopic study

RSC Advances ◽  
2015 ◽  
Vol 5 (91) ◽  
pp. 74189-74197 ◽  
Author(s):  
Dunieskys Gonzalez Larrude ◽  
Yunier Garcia-Basabe ◽  
Fernando Lázaro Freire Junior ◽  
Maria Luiza M. Rocco
Keyword(s):  
Electron Transfer ◽  
Electronic Structure ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Electron Transfer Mechanism ◽  
Graphene Layers ◽  
Doped Graphene ◽  
Charge Transfer Dynamics ◽  
Ultrafast Charge Transfer ◽  
P Type

Spectroscopy characterization on a phosphorous doped graphene layer suggests p-type doping governed by an electron transfer mechanism with a cupper substrate.

scholarly journals Quasicrystalline 30° twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling

2018 ◽  
Vol 115 (27) ◽  
pp. 6928-6933 ◽  
Author(s):  
Wei Yao ◽  
Eryin Wang ◽  
Changhua Bao ◽  
Yiou Zhang ◽  
Kenan Zhang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Layer ◽  
Rotational Symmetry ◽  
Reciprocal Lattice ◽  
Double Resonance ◽  
Interlayer Coupling ◽  
Bilayer Graphene ◽  
Lattice Vector ◽  
Graphene Layers ◽  
Twisted Bilayer Graphene

The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in analogy to quasicrystals) are not only rare in nature, but also the interlayer interaction has often been assumed to be negligible due to the lack of phase coherence. Here we report the successful growth of quasicrystalline 30° twisted bilayer graphene (30°-tBLG), which is stabilized by the Pt(111) substrate, and reveal its electronic structure. The 30°-tBLG is confirmed by low energy electron diffraction and the intervalley double-resonance Raman mode at 1383 cm−1. Moreover, the emergence of mirrored Dirac cones inside the Brillouin zone of each graphene layer and a gap opening at the zone boundary suggest that these two graphene layers are coupled via a generalized Umklapp scattering mechanism—that is, scattering of a Dirac cone in one graphene layer by the reciprocal lattice vector of the other graphene layer. Our work highlights the important role of interlayer coupling in incommensurate quasicrystalline superlattices, thereby extending band structure engineering to incommensurate superstructures.

scholarly journals Electronic structure and electron-phonon coupling of doped graphene layers inKC8

2009 ◽  
Vol 79 (20) ◽  
Author(s):  
A. Grüneis ◽  
C. Attaccalite ◽  
A. Rubio ◽  
D. V. Vyalikh ◽  
S. L. Molodtsov ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Phonon Coupling ◽  
Graphene Layers ◽  
Electron Phonon Coupling ◽  
Doped Graphene

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

scholarly journals CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Adam Januszko ◽  
Agnieszka Iwan ◽  
Stanislaw Maleczek ◽  
Wojciech Przybyl ◽  
Iwona Pasternak ◽  
...  
Keyword(s):  
Graphene Layer ◽  
Flexible Substrate ◽  
Copper Substrate ◽  
Main Idea ◽  
Chemical Vapor ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Mechanical Destruction ◽  
Graphene Layers ◽  
Energy Current

The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom™). Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate) (PET) via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD) technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

scholarly journals Adiabatic versus Non-Adiabatic Electron Transfer at 2D Electrode Materials

2021 ◽  
Author(s):  
Dan-Qing Liu ◽  
Minkyung Kang ◽  
David Perry ◽  
Chang-Hui Chen ◽  
Geoff West ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Density Functional ◽  
Electrode Materials ◽  
Copper Substrate ◽  
Experimental Methodology ◽  
Diffusion Limit ◽  
Rate Theory ◽  
Multilayer Graphene ◽  
Contact Potential ◽  
Graphene Layers

<div><div><div><p>Outer-sphere electron transfer (OS-ET) is a cornerstone elementary electrochemical reaction, yet microscopic understanding is largely based on idealized theories, developed in isolation from experiments that themselves are often close to the kinetic (diffusion) limit. Focusing on graphene as-grown on a copper substrate as a model 2D material/metal-supported electrode system, this study resolves the key electronic interactions in OS-ET, and identifies the role of graphene in modulating the electronic properties of the electrode/electrolyte interface. An integrated experimental-theoretical approach combining co-located multi-microscopy, centered on scanning electrochemical cell microscopy (SECCM), with Raman microscopy and field emission-scanning electron microscopy, together with rate theory and density functional theory (DFT) calculations is used to address OS-ET kinetics of hexaamineruthenium (III/II) chloride, [Ru(NH3)6]3+/2+. The experimental methodology allows spatially-resolved electrochemical measurements to be targeted at distinct regions of monolayer, bilayer and multilayer graphene on copper, with high diffusion rates, to reveal ET kinetics in the order: monolayer > bilayer > multilayer. To rationalize these findings we extended the Schmickler-Newns-Anderson model Hamiltonian for electron transfer and parametrized it using constant potential DFT. Combining this model with rate theory reveals that the difference in kinetics at monolayer and bilayer graphene can be rationalized in the context of a dominantly adiabatic mechanism, where the addition of subsequent graphene layers increases the contact potential, producing an increase in the effective barrier to electron transfer. This study provides a roadmap for the integration of experiments, theory, and simulations in order to understand the nature of heterogeneous electron transfer at complex nanostructured electrode materials.</p></div></div></div>

Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface

2007 ◽  
Vol 556-557 ◽  
pp. 693-696 ◽  
Author(s):  
Alexander Mattausch ◽  
Oleg Pankratov
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Density Functional ◽  
Graphene Layer ◽  
Ab Initio Study ◽  
Weakly Bound ◽  
Functional Theory ◽  
Graphene Layers ◽  
Covalently Bonded ◽  
Structural And Electronic Properties

Employing density functional theory we investigate the model interface between 1 × 1-6H-SiC{0001} surfaces and graphene layers. We find that the first graphene layer is covalently bonded to the SiC substrate, opposing the earlier assumption of a weak van-der-Waals bonding. The interface at the Si-face is metallic, while on the C-face it remains semiconducting. Further graphene layers are then only weakly bound and the typical graphitic properties of the electronic structure appear.

scholarly journals Morphology and properties of the graphene layer on the copper substrate

2015 ◽  
Vol 17 (4) ◽  
pp. 104-108
Author(s):  
Katarzyna Pietrzak ◽  
Wiesława Olesińska ◽  
Cezary Strąk ◽  
Robert Siedlec ◽  
Andrzej Gładki
Keyword(s):  
Mechanical Properties ◽  
Wear Resistance ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Thermal Reduction ◽  
Copper Surface ◽  
Tribological Test ◽  
Graphene Layers ◽  
Reduction Processes

Abstract The aim of the work presented in the article was to clarify controversial comments about anti-corrosion and mechanical properties of graphene coatings, deposited on copper substrates. It was designed special experimental cycle comprising: preparation of graphene forms and copper, the observation of layers Cu / GO (rGO) after the thermal reduction processes and oxidative test in air at 150°C temperature and 350 h in time. The resulting coatings and graphene layers were subjected to tribological test for hardness. The observed differences in the continuity of the coverage copper surface by graphene forms, allowed to understand the macroscopic effect of increased hardness and wear resistance layers rGO/Cu.

Improving peroxymonosulfate activation by copper ion-saturated adsorbent-based single atom catalysts for the degradation of organic contaminants: electron-transfer mechanism and the key role of Cu single atoms

2021 ◽  
Author(s):  
Jingwen Pan ◽  
Baoyu Gao ◽  
Pijun Duan ◽  
Kangying Guo ◽  
Muhammad Akram ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Organic Contaminants ◽  
High Salinity ◽  
Copper Ion ◽  
Single Atom ◽  
Electron Transfer Mechanism ◽  
Persulfate Oxidation ◽  
Single Atoms ◽  
Oxidation Technology

Nonradical pathway-based persulfate oxidation technology is considered to be a promising method for high-salinity organic wastewater treatment.

Sign in / Sign up

Export Citation Format

Share Document