scholarly journals Spreadability of Ag Layer on Oxides and High Performance of AZO/Ag/AZO Sandwiched Transparent Conductive Film

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Yuchao Niu ◽  
Xiaoyu Ma ◽  
Xiangju Liu ◽  
Weimin Wang ◽  
Yongtai Zhen ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Transparent Conductive Oxide ◽  
Glass Substrates ◽  
Bare Glass Substrate ◽  
Conductive Film ◽  
Aluminum Doped Zinc Oxide ◽  
Surface Morphologies ◽  
Better Than

Single layers of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), and Ag, bilayers of ITO/Ag and AZO/Ag, and sandwiched layers of ITO/Ag/ITO (IAI) and AZO/Ag/AZO (ZAZ) were fabricated on ordinary glass substrates using magnetron sputtering. The surface morphologies of single layers and bilayers were measured. The sheet resistance and transmittance of the sandwiched layers were investigated. The results showed that the spreadability of the Ag on the AZO was significantly better than that on the ITO or bare glass substrate. The spreadability of Ag on underlayers influences obviously the performance of transparent conductive oxide/Ag/transparent conductive oxides (TCO/Ag/TCO or TAT). The sheet resistance and transmittance of the ZAZ sandwiched layer with the matching of 35 nm AZO (35 nm)/Ag (9 nm)/AZO (35 nm) fabricated in this paper were low to 3.84 Ω/sq and up to 85.55% at 550 nm, respectively. Its maximum Haacke figure of merit was 0.05469 Ω−1, higher than that of IAI multilayer.

Promising ITO-free perovskite solar cells with WO3–Ag–SnO2 as transparent conductive oxide

2018 ◽  
Vol 6 (40) ◽  
pp. 19330-19337 ◽  
Author(s):  
Fengxia Liang ◽  
Yi Lin ◽  
Zhenfei He ◽  
Wei Chen ◽  
Yudong Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Sheet Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Transparent Conductive Oxide ◽  
One Pot ◽  
Conductive Oxide

Substituting indium-tin-oxide, one-pot deposition of WO3/Ag/SnO2 films with high transmittance and low sheet resistance enables the formulation of high-performance perovskite solar cells.

Study on the Development of Resource-Saving High Performance Slurry - Polishing/CMP for Glass Substrates in a Radical Polishing Environment, Using Manganese Oxide Slurry as an Alternative for Ceria Slurry

2010 ◽  
Vol 64 ◽  
pp. 65-70 ◽  
Author(s):  
Toshiro K. Doi ◽  
Tsutomu Yamazaki ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Osamu Ohnishi ◽  
...  
Keyword(s):  
Manganese Oxide ◽  
Chemical Mechanical Polishing ◽  
High Performance ◽  
Removal Rate ◽  
Comparison Study ◽  
Resource Saving ◽  
Glass Substrates ◽  
Closed Type ◽  
Quality Surface ◽  
Better Than

While investigating polishing mechanism of glass substrates with ceria abrasives (CeO2), we found its oxidizing properties worked effectively for the polishing. This finding has inspired us to speculate about the possibility of the manganese oxide abrasives as an alternative for ceria as they also have oxidizing properties. Therefore, focusing on the valence of the manganese, we have experimentally manufactured MnO, MnO2, Mn2O3 and Mn3O4 abrasives, and conducted a comparison study of the characteristics obtained with ceria slurry and manganese oxide slurries. As a result, the surface roughness of below Ra 0.8nm obtained with Mn2O3 slurry was found better than that with the conventional ceria slurry, on top of which, its removal rate was as good as or equal to that of ceria. Using a novel, closed type CMP (Chemical Mechanical Polishing) machine, we conducted another glass polishing experiment with ceria and manganese oxide slurries. The inside of the CMP machine was filled with high-pressure gases such as oxygen, air and nitrogen and kept at 500kPa to make the polishing environment radical. Through this experiment, we found an effective polishing method for high-quality surface. The removal rates were several times better than that of the conventional polishing performed in an open CMP machine.

Influence of the Film Thickness on the Optical and Electrical Properties of ITO

2009 ◽  
Vol 1212 ◽  
Author(s):  
Man Kin Fung ◽  
Kai-Yin Cheung ◽  
Ye Chuan Sun ◽  
Aleksandra B. Djurišić ◽  
Wai-Kin Chan
Keyword(s):  
Sheet Resistance ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Photovoltaic Devices ◽  
Working Pressure ◽  
Electronic Products ◽  
Light Emitting ◽  
Glass Substrates ◽  
Number Of Factors ◽  
Ito Thin Films

AbstractIndium tin oxide (ITO) is widely used for opto-electronic products such as organic light-emitting diodes, organic photovoltaic devices and liquid crystal displays due to its high transparency and electrical conductivity. Since there is a trade-off between the conductivity and transparency of ITO, it is necessary to optimize performances of opto-electronic products by balancing the sheet resistance and transmittance. Both sheet resistance and transmittance are affected by a number of factors such as working temperature, working pressure, oxygen-to-argon ratio during the fabricating process, and thickness. In our study, ITO thin films were deposited on glass substrates by dc sputtering. Effects of ITO with different thicknesses, sheet resistances, and transmission spectra on the performance of bulk heterojunction photovoltaic devices were investigated.

scholarly journals Effects of Insertion of Ag Mid-Layers on Laser Direct Ablation of Transparent Conductive ITO/Ag/ITO Multilayers: Role of Effective Absorption and Focusing of Photothermal Energy

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5136
Author(s):  
Younggon Choi ◽  
Hong-Seok Kim ◽  
Haunmin Lee ◽  
Wonjoon Choi ◽  
Sang Jik Kwon ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Single Layer ◽  
Electrical Current ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Underlying Mechanism ◽  
Absorption Coefficients ◽  
Glass Substrates ◽  
Oxide Electrodes ◽  
Effective Absorption

From the viewpoint of the device performance, the fabrication and patterning of oxide–metal–oxide (OMO) multilayers (MLs) as transparent conductive oxide electrodes with a high figure of merit have been extensively investigated for diverse optoelectronic and energy device applications, although the issues of their general concerns about possible shortcomings, such as a more complicated fabrication process with increasing cost, still remain. However, the underlying mechanism by which a thin metal mid-layer affects the overall performance of prepatterned OMO ML electrodes has not been fully elucidated. In this study, indium tin oxide (ITO)/silver (Ag)/ITO MLs are fabricated using an in-line sputtering method for different Ag thicknesses on glass substrates. Subsequently, a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, λ = 1064 nm) laser is employed for the direct ablation of the ITO/Ag/ITO ML films to pattern ITO/Ag/ITO ML electrodes. Analysis of the laser-patterned results indicate that the ITO/Ag/ITO ML films exhibit wider ablation widths and lower ablation thresholds than ITO single layer (SL) films. However, the dependence of Ag thickness on the laser patterning results of the ITO/Ag/ITO MLs is not observed, despite the difference in their absorption coefficients. The results show that the laser direct patterning of ITO/Ag/ITO MLs is primarily affected by rapid thermal heating, melting, and vaporization of the inserted Ag mid-layer, which has considerably higher thermal conductivity and absorption coefficients than the ITO layers. Simulation reveals the importance of the Ag mid-layer in the effective absorption and focusing of photothermal energy, thereby supporting the experimental observations. The laser-patterned ITO/Ag/ITO ML electrodes indicate a comparable optical transmittance, a higher electrical current density, and a lower resistance compared with the ITO SL electrode.

Growth of c-plane and m-plane aluminium-doped zinc oxide thin films: epitaxy on flexible substrates with cubic-structure seeds

2020 ◽  
Vol 76 (2) ◽  
pp. 233-240
Author(s):  
Yongkuan Li ◽  
Xinxing Liu ◽  
Dan Wen ◽  
Kai Lv ◽  
Gang Zhou ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Lattice Mismatch ◽  
Optoelectronic Devices ◽  
Flexible Substrates ◽  
Glass Substrates ◽  
Electrical Polarity ◽  
Cubic Structure ◽  
Tin Oxide Films

Manufacturing high-quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c-plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic-structure seeds, it was possible to fabricate polar c-plane and nonpolar m-plane aluminium-doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c-plane and m-plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm-thick m-plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c-plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c-plane than in the m-plane AZO film results from the electrical polarity along the c-axis. The resistivity of the c-plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high-performance flexible ZnO devices.

scholarly journals High Performance Transparent Conducting Films of Cadmium Indate Prepared by Rf sputtering.

1996 ◽  
Vol 426 ◽  
Author(s):  
T. J. Coutts ◽  
X. Wu ◽  
W. P. Mulligan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Visible Region ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Before And After

AbstractWe are examining various spinel-structured thin films (e.g., Cd2SnO4, Zn2SnO4) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, we report on cadmium indate (CdIn2O4, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3x10-4Ω cm were achieved for a film thickness of 0.55 μm. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm2 V-s-1 and the highest carrier concentration was 7.5x1020 cm-3.

scholarly journals Non-Iridescent Metal Nanomesh with Disordered Nanoapertures Fabricated by Phase Separation Lithography of Polymer Blend as Transparent Conductive Film

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 867
Author(s):  
Xinyu Chen ◽  
Yuting He ◽  
Xiaofeng Chen ◽  
Chunyu Huang ◽  
Yang Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Polymer Blend ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Large Scale ◽  
Optoelectronic Devices ◽  
Optical Diffraction ◽  
Transparent Conductive Film ◽  
Conductive Film ◽  
Lift Off

Metallic nanomesh, one of the emerging transparent conductive film (TCF) materials with both high electrical conductivity and optical transmittance, shows great potential to replace indium tin oxide (ITO) in optoelectronic devices. However, lithography-fabricated metallic nanomeshes suffer from an iridescence problem caused by the optical diffraction of periodic nanostructures, which has negative effects on display performance. In this work, we propose a novel approach to fabricate large-scale metallic nanomesh as TCFs on flexible polyethylene terephthalate (PET) sheets by maskless phase separation lithography of polymer blends in a low-cost and facile process. Polystyrene (PS)/polyphenylsilsequioxane (PPSQ) polymer blend was chosen as resist material for phase separation lithography due to their different etching selectivity under O2 reactive ion etching (RIE). The PS constituent was selectively removed by O2 RIE and the remained PPSQ nanopillars with varying sizes in random distribution were used as masks for further pattern transfer and metal deposition process. Gold (Au) nanomeshes with adjustable nanostructures were achieved after the lift-off step. Au nanomesh exhibited good optoelectronic properties (RS = 41 Ω/sq, T = 71.9%) and non-iridescence, without angle dependence owing to the aperiodic structures of disordered apertures. The results indicate that this Au nanomesh has high potential application in high-performance and broad-viewing-angle optoelectronic devices.

ZnO:Al films prepared by inline DC magnetron sputtering

2014 ◽  
Vol 3 (1) ◽  
Author(s):  
Astrid Bingel ◽  
Kevin Füchsel ◽  
Norbert Kaiser ◽  
Andreas Tünnermann
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conductive Oxide ◽  
Production Costs ◽  
Dc Magnetron Sputtering ◽  
High Quality ◽  
Conductive Oxide ◽  
Aluminum Doped Zinc Oxide

AbstractAluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxide (TCO) materials that can substitute the high-quality but costly indium tin oxide (ITO). To ensure high-quality films as well as moderate production costs, inline DC magnetron sputtering was chosen to deposit thin AZO films. The influence of sputter gas pressure, substrate temperature, and film thickness on the electrical, optical, and structural properties was analyzed. The resistivity reaches a minimum of 1.3×10

Indium Tin Oxide (ITO) Film Removal Technique for Failure Analysis on Packaged Optoelectronic Devices

2003 ◽  
Author(s):  
Shawn Elliott ◽  
Jean Gordon ◽  
Peter Plourde
Keyword(s):  
Failure Analysis ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Argon Gas ◽  
Electrical Failure ◽  
Glass Substrates ◽  
Ito Film ◽  
Conductive Film ◽  
Aluminum Metallization ◽  
Removal Technique

Abstract Various detector chips in optocoupler devices have a thin indium tin oxide (ITO) film deposited over the passivation. This transparent, conductive film is found over the photodetecting area of the die. When this film is electrically connected to ground potential through contacts, it acts as a shield to avoid inversion failures by sinking any charge buildup to ground. In order to perform a full electrical failure analysis on these optocoupler detector chips, the ITO layer must be removed. An extensive search found numerous papers on etching this film over glass substrates, but no known technique was found to selectively remove the ITO layer on a packaged die. This paper discusses an approach to remove this film using an argon gas etch technique. The ideal characteristics of any process used to remove this film on a finished die would be to completely etch the ITO layer, electrically isolating it from ground, while leaving the underlying passivation and metallization fully intact. This would allow for further electrical failure analysis of the die without causing additional damage or affecting the failure mechanism. The results of an experiment using various chemical and gas etchants found that an argon gas etch would remove the ITO layer while only slightly etching the phosphosilicate glass (PSG) passivation beneath. Electrical failure analysis of the die continued at this point, and a subsequent buffered oxide etch (BOE) removed the remaining passivation, leaving the exposed metallization and oxide completely intact. This technique has been used successfully on device failures to find passivation contamination shorting the aluminum metallization to the ITO film.

scholarly journals The Transmittance Modulation of ZnO/Cu/ZnO Transparent Conductive Electrodes Prepared on Glass Substrates

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 3916
Author(s):  
Dooho Choi
Keyword(s):  
Visible Light ◽  
Sheet Resistance ◽  
High Performance ◽  
Critical Role ◽  
Optoelectronic Devices ◽  
Light Transmittance ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Optimized Conditions

With the explosive development of optoelectronic devices, the need for high-performance transparent conductive (TCE) electrodes for optoelectronic devices has been increasing accordingly. The two major TCE requirements are (1) visible light average transmittance higher than 80% and (2) sheet resistance lower than 10 Ω/sq. In this study, we investigated the critical role of the top and bottom ZnO thicknesses for the ZnO/Cu/ZnO electrodes prepared on glass substrates. It was shown that the required Cu thickness to meet the conductivity requirement is 8 nm, which was fixed and then the thicknesses of the top and ZnO layers were independently varied to experimentally determine the optimized conditions for optical transparency. The thicknesses of the top and bottom ZnO layers were both found to significantly affect the peak transmittance as well as the average visible light transmittance. The ZnO/Cu/ZnO electrode exhibits peak and average transmittance of 95.4% and 87.4%, excluding the transmittance of glass substrates, along with a sheet resistance of 9.7 Ω/sq, with a corresponding Haacke’s figure of merit (φH=Tave10Rs) of 0.064, which exceeds the reported value for the ZnO/Cu/ZnO electrodes, manifesting the need of experimental optimization in this study.

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