scholarly journals Non-Iridescent Metal Nanomesh with Disordered Nanoapertures Fabricated by Phase Separation Lithography of Polymer Blend as Transparent Conductive Film

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 867
Author(s):  
Xinyu Chen ◽  
Yuting He ◽  
Xiaofeng Chen ◽  
Chunyu Huang ◽  
Yang Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Polymer Blend ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Large Scale ◽  
Optoelectronic Devices ◽  
Optical Diffraction ◽  
Transparent Conductive Film ◽  
Conductive Film ◽  
Lift Off

Metallic nanomesh, one of the emerging transparent conductive film (TCF) materials with both high electrical conductivity and optical transmittance, shows great potential to replace indium tin oxide (ITO) in optoelectronic devices. However, lithography-fabricated metallic nanomeshes suffer from an iridescence problem caused by the optical diffraction of periodic nanostructures, which has negative effects on display performance. In this work, we propose a novel approach to fabricate large-scale metallic nanomesh as TCFs on flexible polyethylene terephthalate (PET) sheets by maskless phase separation lithography of polymer blends in a low-cost and facile process. Polystyrene (PS)/polyphenylsilsequioxane (PPSQ) polymer blend was chosen as resist material for phase separation lithography due to their different etching selectivity under O2 reactive ion etching (RIE). The PS constituent was selectively removed by O2 RIE and the remained PPSQ nanopillars with varying sizes in random distribution were used as masks for further pattern transfer and metal deposition process. Gold (Au) nanomeshes with adjustable nanostructures were achieved after the lift-off step. Au nanomesh exhibited good optoelectronic properties (RS = 41 Ω/sq, T = 71.9%) and non-iridescence, without angle dependence owing to the aperiodic structures of disordered apertures. The results indicate that this Au nanomesh has high potential application in high-performance and broad-viewing-angle optoelectronic devices.

scholarly journals Moisture-Assisted Formation of High-Quality Silver Nanowire Transparent Conductive Films with Low Junction Resistance

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 671
Author(s):  
Lipeng Zhou ◽  
Yuehui Hu ◽  
Hao Gao ◽  
Youliang Gao ◽  
Wenjun Zhu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Capillary Condensation ◽  
Silver Nanowire ◽  
Environmental Stability ◽  
Bending Test ◽  
Commercial Application ◽  
Junction Resistance ◽  
Transparent Conductive Film ◽  
Conductive Film ◽  
Mechanical Bending

Silver nanowire (AgNWs) transparent conductive film (TCF) is considered to be the most favorable material to replace indium tin oxide (ITO) as the next-generation transparent conductive film. However, the disadvantages of AgNWs, such as easy oxidation and high wire-wire junction resistance, dramatically limit its commercial application. In this paper, moisture treatment was adopted, and water was dripped on the surface of AgNWs film or breathed on the surface so that the surface was covered with a layer of water vapor. The morphology of silver nanowire mesh nodes is complex, and the curvature is large. According to the capillary condensation theory, water molecules preferentially condense near the geometric surface with significant curvature. The capillary force is generated, making the wire-wire junction of AgNWs mesh bond tightly, resulting in good ohmic contact. The experimental results show that AgNWs-TCF treated by moisture has better conductivity, with an average sheet resistance of 20 Ω/sq and more uniform electrical properties. The bending test and adhesion test showed that AgNWs-TCF treated by moisture still exhibited good mechanical bending resistance and environmental stability.

Coating-free, air-stable silver nanowires for high-performance transparent conductive film

2018 ◽  
Vol 29 (37) ◽  
pp. 375601 ◽  
Author(s):  
Long Tang ◽  
Jiajia Zhang ◽  
Lei Dong ◽  
Yunmei Pan ◽  
Chongyang Yang ◽  
...  
Keyword(s):  
High Performance ◽  
Silver Nanowires ◽  
Transparent Conductive Film ◽  
Free Air ◽  
Conductive Film

Growth of c-plane and m-plane aluminium-doped zinc oxide thin films: epitaxy on flexible substrates with cubic-structure seeds

2020 ◽  
Vol 76 (2) ◽  
pp. 233-240
Author(s):  
Yongkuan Li ◽  
Xinxing Liu ◽  
Dan Wen ◽  
Kai Lv ◽  
Gang Zhou ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Lattice Mismatch ◽  
Optoelectronic Devices ◽  
Flexible Substrates ◽  
Glass Substrates ◽  
Electrical Polarity ◽  
Cubic Structure ◽  
Tin Oxide Films

Manufacturing high-quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c-plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic-structure seeds, it was possible to fabricate polar c-plane and nonpolar m-plane aluminium-doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c-plane and m-plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm-thick m-plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c-plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c-plane than in the m-plane AZO film results from the electrical polarity along the c-axis. The resistivity of the c-plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high-performance flexible ZnO devices.

CVD growth of large area and uniform graphene on tilted copper foil for high performance flexible transparent conductive film

2012 ◽  
Vol 22 (35) ◽  
pp. 18283 ◽  
Author(s):  
Jia Zhang ◽  
PingAn Hu ◽  
Xiaona Wang ◽  
Zhenlong Wang ◽  
Danqin Liu ◽  
...  
Keyword(s):  
High Performance ◽  
Copper Foil ◽  
Large Area ◽  
Transparent Conductive Film ◽  
Conductive Film ◽  
Cvd Growth

Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

Smart Science ◽  
2014 ◽  
Vol 2 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Shao-Kai Lu ◽  
Ji-Ting Huang ◽  
Tsung-Hsin Lee ◽  
Jyun-Jie Wang ◽  
Day-Shan Liu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Plastic Substrate ◽  
Transparent Conductive Film ◽  
Conductive Film
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