scholarly journals High Performance Transparent Conducting Films of Cadmium Indate Prepared by Rf sputtering.

1996 ◽  
Vol 426 ◽  
Author(s):  
T. J. Coutts ◽  
X. Wu ◽  
W. P. Mulligan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Visible Region ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Before And After

AbstractWe are examining various spinel-structured thin films (e.g., Cd2SnO4, Zn2SnO4) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, we report on cadmium indate (CdIn2O4, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3x10-4Ω cm were achieved for a film thickness of 0.55 μm. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm2 V-s-1 and the highest carrier concentration was 7.5x1020 cm-3.

Post-Annealing Effects on ITO Thin Films RF Sputtered at Different Thicknesses on Si and Glass

2014 ◽  
Vol 925 ◽  
pp. 411-415 ◽  
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Siti Khadijah Mohd Bakhori ◽  
Hassan Zainuriah
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Morphological Characteristics ◽  
Annealing Treatment ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films

We report on electrical, optical and surface morphological characteristics of indium tin oxide (ITO) thin films. The ITO was deposited by radio frequency (RF) magnetron sputtering on Si and glass substrates at different thicknesses of 125 nm and 239 nm. Post-annealing treatment was conducted on the samples at temperature of 500°C and 600°C. From Hall Effect measurement, the lowest resistivity was measured as 4.4 × 10-4 Ωcm and 4.5 × 10-4 Ωcm corresponding to the 239 nm and 125 nm ITO sample, respectively, after post-annealed at 600°C. Using UV-Vis spectrophotometer, the highest transmittance of ~84% at 470 nm was observed with respect to the 125 nm ITO thin films after post-annealed at 500°C. Furthermore, the 500°C post-annealed 125 nm thin film shows highest carrier concentrations of more than 1021 cm-3 and smoothest surface morphology of 0.5 nm root-mean-square, RMS. It is clearly shown that post-annealing treatment on ITO thin films is able to enhance the electrical and optical transmittance properties as compared to the as deposited films.

Crystallinity and Characterization of Rf-Magetron Sputtered ZnO-Doped (Zr0.8Sn0.2)TiO4 Thin Films on ITO/Glass Substrate

2012 ◽  
Vol 486 ◽  
pp. 345-349
Author(s):  
Cheng Hsing Hsu ◽  
Pai Chuan Yang ◽  
Wen Shiush Chen ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Morphological Characteristics ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

Microstructure, optical and electrical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O2) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O2 ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O2 ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr0.8Sn0.2)TiO2 films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10-9 A/cm2.

Structural and Optical Properties of InSnO3 Sol-Gel Coatings to Use in Windows Glass Buildings

2010 ◽  
Vol 168-170 ◽  
pp. 2348-2351
Author(s):  
Lazaro De Jesus Dominguez Gallegos ◽  
Angélica Silvestre López Rodríguez ◽  
Pio Sifuentes Gallardo ◽  
Miguel Angel Hernández Rivera ◽  
María Guadalupe Garnica Romo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Indium Chloride ◽  
Glass Substrates ◽  
Tin Chloride ◽  
Ito Thin Films ◽  
Ito Films

Indium stannate (InSnO3) films doping with small amounts of copper are made highly useful as architectural window coatings. Indium-tin-oxide (ITO) has attracted intense interest due to some of its unique characteristics; it has high optical transmittance in the visible region, low electric resistivity, and chemical stability. Therefore, ITO thin films have been found to play an important role in opto-electronic applications. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel process. The initial sols were prepared by mixing solutions of indium chloride prepared in anhydrous ethanol with tin chloride and mechanically stirring and refluxed 2 hours and aged 2 week, the resultant mixture until a clear and sticky coating sol was obtained. The glass substrates were spin-coated and annealed at 500 °C. Because annealing conditions affect the microstructures, the properties of the resultant ITO films can be controlled. The optical transmittance of 200 nm thick ITO film was more than 80% in the visible region. The surface morphology examined by SEM appears to be uniform over large surface areas. The structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using XRD, AFM and spectrophotometer techniques

scholarly journals High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

2018 ◽  
Vol 36 (3) ◽  
pp. 427-434 ◽  
Author(s):  
S. Benzitouni ◽  
M. Zaabat ◽  
A. Mahdjoub ◽  
A. Benaboud ◽  
B. Boudine
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Atomic Ratio ◽  
Glass Substrates ◽  
In Doping ◽  
Coating Method ◽  
Diffraction Patterns ◽  
Dip Coating Method

AbstractHeavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.

scholarly journals Nanostructural Characterisation and Optical Properties of Sputter-Deposited Thick Indium Tin Oxide (ITO) Coatings

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1127
Author(s):  
Andrius Subacius ◽  
Bill Baloukas ◽  
Etienne Bousser ◽  
Steve J. Hinder ◽  
Mark A. Baker ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanocrystalline Structure ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Sputter Deposited ◽  
Thick Coatings

Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10−1 Ω·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.

Effect of RF Sputtering Power on the Structural, Optical and Hydrophobic Properties of SiNx Thin Film

2011 ◽  
Vol 194-196 ◽  
pp. 2340-2346 ◽  
Author(s):  
Hong Yu Liang ◽  
Qing Nan Zhao ◽  
Feng Gao ◽  
Wen Hui Yuan ◽  
Yu Hong Dong
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Hydrophobic Properties ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Sputtering Power

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power.

EFFECT OF THICKNESS ON THE PROPERTIES OF In-DOPED ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (07) ◽  
pp. 995-1003 ◽  
Author(s):  
L. P. PENG ◽  
L. FANG ◽  
X. F. YANG ◽  
Q. L. HUANG ◽  
F. WU ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Glass Substrates

In-doped zinc oxide ( ZnO:In ) thin films with thickness from 157 nm to 592 nm have been deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effect of the film thickness on the structural, electrical and optical properties of ZnO:In thin films has been investigated. It is found that the films are hexagonal wurtzite structure with c-axis perpendicular to the substrate, and with increasing thickness, the crystallinity, the grains size and the conductivity of the films increases, but the strains along c-axis and the transmittance decrease. The decrease of the resistivity in a thicker film is attributed to the slight increase of the carrier concentration and the significant increase of Hall mobility. The transmittance of all the films is over 80% in the visible region (400–800 nm) and the band gap decrease with the increase of film thickness. The film with the thickness of around 303 nm has the resistivity of 6.07 × 10-3 Ω⋅ cm and the transmittance of 90% in the visible range. Based on the good conductivity and high transmittance, the ZnO:In films prepared by magnetron sputtering can be regarded as a potential transparent electrode.

Comparative Study of the Properties between Transparent Conducting ZnO:Zr and ZnO:Al Films Deposited by DC Magnetron Sputtering

2011 ◽  
Vol 284-286 ◽  
pp. 2182-2186 ◽  
Author(s):  
Hua Fu Zhang ◽  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Transparent Conducting ◽  
Maximum Value ◽  
Better Than

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) and aluminium-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering at room temperature. The crystallinity of ZnO:Zr and ZnO:Al thin films increases as the target-to-substrate distance decreases, and the crystallinity of ZnO:Zr films is found to be always better than that of ZnO:Al films prepared under the same deposition conditions. As the target-to-substrate distance decreases, the resistivity of both film types decreases greatly while the optical transmittance does not change much with the variation of the distance. When target-to-substrate distance is 4.1 cm, the lowest resistivity of 6.0×10-4Ω·cm and 5.7×10-4Ω·cm was obtained for ZnO:Zr and ZnO:Al films, respectively. The figure of merit arrived at a maximum value of 3.98×10-2Ω for ZnO:Zr films lower than 5×10-2Ω for ZnO:Al films.

TRANSPARENT ZINC OXIDE THIN FILMS PREPARED BY PLD WITH DIFFERENT OXYGEN PRESSURES

2007 ◽  
Vol 14 (03) ◽  
pp. 425-429
Author(s):  
KASIMAYAN UMA ◽  
MOHAMAD RUSOP ◽  
TETSUO SOGA ◽  
TAKASHI JIMBO
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
High Oxygen Pressure ◽  
High Pressure Oxygen

ZnO thin films were prepared on silicon (001) and corning glass substrates using Pulsed laser deposition (PLD) technique with different oxygen pressures. The microstructure, crystallinity, and resistivity of the films depend on the oxygen pressure used. The effects of the films grown at room temperature and at 500°C with different oxygen pressures have been investigated by analyzing the optical and electrical properties of the film. The XRD analysis showed that the high intensity of c-axis orientation of ZnO thin films was obtained under high oxygen pressure and this leads to greater electrical and optical properties. By applying high pressure oxygen, the resistivity value was decreased and optical transmittance became higher in the visible region. The surface morphology of the films showed that the smooth surface was observed without any cracks.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

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