scholarly journals Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Callum G. Littlejohns ◽  
Thalia Dominguez Bucio ◽  
Milos Nedeljkovic ◽  
Hong Wang ◽  
Goran Z. Mashanovich ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Photonics ◽  
Silicon Germanium ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
Photonic Devices ◽  
Device Fabrication ◽  
Crystal Silicon ◽  
Seamless Integration ◽  
Active Devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Semi-automatic, volume production of silicon solar cells

1987 ◽  
Vol 65 (8) ◽  
pp. 892-896 ◽  
Author(s):  
R. E. Thomas ◽  
C. E. Norman ◽  
S. Varma ◽  
G. Schwartz ◽  
E. M. Absi
Keyword(s):  
Solar Cells ◽  
Single Crystal ◽  
Plasma Etching ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
High Yield ◽  
Silicon Solar Cells ◽  
Crystal Silicon ◽  
Volume Production ◽  
P Type

A low-cost, high-yield technology for producing single-crystal silicon solar cells at high volumes, and suitable for export to developing countries, is described. The process begins with 100 mm diameter as-sawn single-crystal p-type wafers with one primary flat. Processing steps include etching and surface texturization, gaseous-source diffusion, plasma etching, and contacting via screen printing. The necessary adaptations of such standard processes as diffusion and plasma etching to solar-cell production are detailed. New process developments include a high-throughput surface-texturization technique, and automatic printing and firing of cell contacts.The technology, coupled with automated equipment developed specifically for the purpose, results in solar cells with an average efficiency greater than 12%, a yield exceeding 95%, a tight statistical spread on parameters, and a wide tolerance to starting substrates (including the first 100 mm diameter wafers made in Canada). It is shown that with minor modifications, the present single shift 500 kWp (kilowatt peak) per year capacity technology can be readily expanded to 1 MWp per year, adapted to square and polycrystalline substrates, and efficiencies increased above 13%.

Persistent Photocurrent in InP Nanowires Heteroepitaxially Bridged Between Single Crystal Si Surfaces

2008 ◽  
Vol 1080 ◽  
Author(s):  
Ataur Sarkar ◽  
M. Saif Islam ◽  
Sungsoo Yi ◽  
A. Alec Talin
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Relaxation Times ◽  
Single Crystal Silicon ◽  
Surface States ◽  
Photonic Devices ◽  
Crystal Silicon ◽  
Slow Decay ◽  
Visible Laser ◽  
P Type

ABSTRACTRoom temperature photoelectrical characterization with 325-nm ultraviolet and 633-nm visible laser excitations is performed on lateral p-type InP nanowires bridged between vertically oriented heavily p-doped single crystal silicon electrodes. Experimental results under 5 V bias demonstrate persistent photoconductivity through a slow decay of excess photocurrent with relaxation times ∼110 s and ∼50 s for the UV and visible laser illuminations, respectively. Persistent photocurrent originates from the long recombination time due to carrier trapping in vacancies, defect centers, and surface states in the InP nanowires. The study opens a new understanding of trap physics of nanowire heterostructures, a critical investigation for applications of these materials in photonic devices.

Present status and future prospects of silicon solar cell arrays and systems

1980 ◽  
Vol 295 (1414) ◽  
pp. 435-443 ◽  
Keyword(s):  
Single Crystal ◽  
Silicon Solar Cell ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
Film Deposition ◽  
Medium Size ◽  
Production Volume ◽  
Crystal Silicon ◽  
Cell Arrays ◽  
And Performance

The first part of this paper deals with the present state of the art of the single crystal silicon cell industry: production volume, cost breakdown and main technologies. In the second section, improvements of the single crystal technologies, caused by mass production and automated physical processes, are described. These developments are compared, with regard to both cost and performance, with the future polycrystalline (or ‘semicrystalline’) materials, including amorphous silicon films. The various approaches, i.e. vapour or liquid film deposition, or oriented bulk ingot crystallization, are discussed. The third part assumes that very low cost goals can be achieved, either through the development of sophisticated single crystal technology, or through a polysilicon breakthrough. Future markets for photovoltaic conversion, including medium-size power generating plants, are then considered.

scholarly journals Transfer techniques for single-crystal silicon/germanium nanomembranes and their application in flexible electronics

2018 ◽  
Vol 48 (6) ◽  
pp. 670-687
Author(s):  
Gongjin LI ◽  
Enming SONG ◽  
Qinglei GUO ◽  
Gaoshan HUANG ◽  
Yongfeng MEI
Keyword(s):  
Single Crystal ◽  
Flexible Electronics ◽  
Silicon Germanium ◽  
Single Crystal Silicon ◽  
Crystal Silicon
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