Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

2015 ◽  
Vol 117 (12) ◽  
pp. 123102 ◽  
Author(s):  
Perveen Akhter ◽  
Mengbing Huang ◽  
William Spratt ◽  
Nirag Kadakia ◽  
Faisal Amir
Keyword(s):  
Single Crystal ◽  
Silicon Photonics ◽  
Optical Constants ◽  
Single Crystal Silicon ◽  
Silver Nanostructures ◽  
Crystal Silicon

scholarly journals Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Callum G. Littlejohns ◽  
Thalia Dominguez Bucio ◽  
Milos Nedeljkovic ◽  
Hong Wang ◽  
Goran Z. Mashanovich ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Photonics ◽  
Silicon Germanium ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
Photonic Devices ◽  
Device Fabrication ◽  
Crystal Silicon ◽  
Seamless Integration ◽  
Active Devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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