scholarly journals Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
W. W. Wang ◽  
F. M. Guo ◽  
Y. Q. Li
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Reverse Bias ◽  
Detection Efficiency ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Device Structure ◽  
High Quantum Efficiency ◽  
Gaas Quantum Dot

We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.

scholarly journals Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 708
Author(s):  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
Incident Light ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Silicon On Insulator ◽  
Noise Equivalent Power ◽  
Distributed Bragg Reflector ◽  
Absorption Mechanism ◽  
Output Mirror ◽  
Fabry Perot

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.

scholarly journals III-Nitrides Resonant Cavity Photodetector Devices

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4428
Author(s):  
Susana Fernández ◽  
Fernando B. Naranjo ◽  
Miguel Ángel Sánchez-García ◽  
Enrique Calleja
Keyword(s):  
Spectral Response ◽  
Optical Cavity ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Bragg Reflector ◽  
Planar Geometry ◽  
Distributed Bragg Reflector ◽  
Frequency Plasma ◽  
Wavelength Selectivity ◽  
Conventional Device

III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al0.3Ga0.7N/GaN, an Au-based Schottky contact as top mirror, and an active zone of 40 nm-thick GaN layer. The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the resonant devices that showed two raised peaks at 330 and 358 nm with responsivities of 0.34 and 0.39 mA/W, respectively. Both values were 80 times higher than the planar response of the conventional device. These results demonstrate the strong effect of the optical cavity to achieve the desired wavelength selectivity and to enhance the optical field thanks to the light resonance into the optical cavity. The research of such a combination of nitride-based Bragg mirror and thin active layer is the kernel of the present paper.

Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density

2006 ◽  
Author(s):  
Chung-Chi Liao ◽  
Shiang-Feng Tang ◽  
Tzu-Chiang Chen ◽  
Cheng-Der Chiang ◽  
San-Te Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Temperature Dependent ◽  
Noise Density ◽  
Gaas Quantum Dot

Light efficiency enhanced quantum dot color conversion layer based on a distributed Bragg reflector

2021 ◽  
Author(s):  
Yuanyuan Ye ◽  
Sheng Xu ◽  
Enguo Chen ◽  
Yun Ye ◽  
Xinpei Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Color Conversion ◽  
Light Efficiency

Readout on the resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector

2011 ◽  
Author(s):  
Fang-min Guo ◽  
Yong-pan Wang ◽  
Feng Mao ◽  
Zheng-qi Zheng ◽  
Jun-hao Chu
Keyword(s):  
Quantum Dot ◽  
Resonant Cavity ◽  
Gaas Quantum Dot
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