GaN-based resonant-cavity light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector (Conference Presentation)

2019 ◽  
Author(s):  
Chia-Feng Lin ◽  
Jung Han
Keyword(s):  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting

scholarly journals InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

2020 ◽  
Vol 11 (1) ◽  
pp. 8
Author(s):  
Cheng-Jie Wang ◽  
Ying Ke ◽  
Guo-Yi Shiu ◽  
Yi-Yun Chen ◽  
Yung-Sen Lin ◽  
...  
Keyword(s):  
Active Layer ◽  
Optical Pumping ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Central Wavelength ◽  
Light Emitting ◽  
Pl Spectra ◽  
Cavity Structure

InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

InGaN MQW LED structures using AlN/GaN DBR and Ag-based p-contact

2011 ◽  
Vol 1288 ◽  
Author(s):  
K. Lee ◽  
L. E. Rodak ◽  
V. Kumbham ◽  
V. Narang ◽  
J. S. Dudding ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Light Output ◽  
Bragg Reflector ◽  
Output Intensity ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Maximum Reflectivity ◽  
Average Reflectance ◽  
Multi Quantum Well

ABSTRACTResonant cavity light emitting diode (RCLED) structure was grown using digital AlGaN/GaN Distributed Bragg Reflector (DBR) and Ag-based p-contact. A five period of InGaN/GaN multi-quantum well (MQW) layers are placed between these two high reflectance mirrors. Digital AlGaN/GaN DBR have a maximum reflectivity of about 60 % at 445 nm and 90 % at 439 nm for 6 period and 12 period, respectively. Ag-based p-contact exhibits an average reflectance of around 85-90 % for a wavelength of 400-600 nm. The light output intensity of the RCLEDs with 12 period digital AlGaN/GaN DBR is higher by a factor of 3 as compared to that of the similar structure without digital AlGaN/GaN DBR at an injection current of 50 mA.

AlGaInP Light Emitting Diode with Coupled Distributed Bragg Reflector Structure

2017 ◽  
Vol 54 (5) ◽  
pp. 052301
Author(s):  
郑元宇 Zheng Yuanyu ◽  
吴超瑜 Wu Chaoyu ◽  
林峰 Lin Feng ◽  
伍明跃 Wu Mingyue ◽  
周启伦 Zhou Qilun ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting

Fabrication and characterization of microcavity organic light-emitting diode with CaF2/ZnS distributed Bragg reflector

2020 ◽  
Vol 699 ◽  
pp. 137912 ◽  
Author(s):  
Takuya Kitabayashi ◽  
Teruyuki Asashita ◽  
Naoya Satoh ◽  
Takayuki Kiba ◽  
Midori Kawamura ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Fabrication And Characterization
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