scholarly journals III-Nitrides Resonant Cavity Photodetector Devices

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4428
Author(s):  
Susana Fernández ◽  
Fernando B. Naranjo ◽  
Miguel Ángel Sánchez-García ◽  
Enrique Calleja
Keyword(s):  
Spectral Response ◽  
Optical Cavity ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Bragg Reflector ◽  
Planar Geometry ◽  
Distributed Bragg Reflector ◽  
Frequency Plasma ◽  
Wavelength Selectivity ◽  
Conventional Device

III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al0.3Ga0.7N/GaN, an Au-based Schottky contact as top mirror, and an active zone of 40 nm-thick GaN layer. The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the resonant devices that showed two raised peaks at 330 and 358 nm with responsivities of 0.34 and 0.39 mA/W, respectively. Both values were 80 times higher than the planar response of the conventional device. These results demonstrate the strong effect of the optical cavity to achieve the desired wavelength selectivity and to enhance the optical field thanks to the light resonance into the optical cavity. The research of such a combination of nitride-based Bragg mirror and thin active layer is the kernel of the present paper.

scholarly journals Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 708
Author(s):  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
Incident Light ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Silicon On Insulator ◽  
Noise Equivalent Power ◽  
Distributed Bragg Reflector ◽  
Absorption Mechanism ◽  
Output Mirror ◽  
Fabry Perot

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.

Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector

2003 ◽  
Vol 42 (Part 2, No. 12B) ◽  
pp. L1509-L1511 ◽  
Author(s):  
Declan Byrne ◽  
Franck Natali ◽  
Benjamin Damilano ◽  
Amelie Dussaigne ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Al Content ◽  
High Al Content

scholarly journals InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

2020 ◽  
Vol 11 (1) ◽  
pp. 8
Author(s):  
Cheng-Jie Wang ◽  
Ying Ke ◽  
Guo-Yi Shiu ◽  
Yi-Yun Chen ◽  
Yung-Sen Lin ◽  
...  
Keyword(s):  
Active Layer ◽  
Optical Pumping ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Central Wavelength ◽  
Light Emitting ◽  
Pl Spectra ◽  
Cavity Structure

InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

InGaN MQW LED structures using AlN/GaN DBR and Ag-based p-contact

2011 ◽  
Vol 1288 ◽  
Author(s):  
K. Lee ◽  
L. E. Rodak ◽  
V. Kumbham ◽  
V. Narang ◽  
J. S. Dudding ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Light Output ◽  
Bragg Reflector ◽  
Output Intensity ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Maximum Reflectivity ◽  
Average Reflectance ◽  
Multi Quantum Well

ABSTRACTResonant cavity light emitting diode (RCLED) structure was grown using digital AlGaN/GaN Distributed Bragg Reflector (DBR) and Ag-based p-contact. A five period of InGaN/GaN multi-quantum well (MQW) layers are placed between these two high reflectance mirrors. Digital AlGaN/GaN DBR have a maximum reflectivity of about 60 % at 445 nm and 90 % at 439 nm for 6 period and 12 period, respectively. Ag-based p-contact exhibits an average reflectance of around 85-90 % for a wavelength of 400-600 nm. The light output intensity of the RCLEDs with 12 period digital AlGaN/GaN DBR is higher by a factor of 3 as compared to that of the similar structure without digital AlGaN/GaN DBR at an injection current of 50 mA.

scholarly journals Molecular Polaritons Generated from Strong Coupling between CdSe Nanoplatelets and a Dielectric Optical Cavity

2021 ◽  
Author(s):  
Liangyu Qiu ◽  
Arkajit Mandal ◽  
Ovishek Morshed ◽  
Mahilet T. Meidenbauer ◽  
William Girten ◽  
...  
Keyword(s):  
Strong Coupling ◽  
Hybrid System ◽  
Optical Cavity ◽  
Bragg Reflector ◽  
Strong Coupling Regime ◽  
Classical Dynamics ◽  
Distributed Bragg Reflector ◽  
Dynamics Simulations ◽  
Adiabatic Transitions ◽  
Physical And Chemical

We demonstrate the formation of CdSe nanoplatelet (NPL) exciton-polaritons in a distributed bragg reflector (DBR) cavity. The molecule-cavity hybrid system is in the strong coupling regime with an 83 meV Rabi splitting, characterized from angle-resolved reflectance and photoluminescence measurements. Mixed quantum-classical dynamics simulations are used to investigate the polariton photo-physics of the hybrid system by treating the electronic and photonic degree of freedom (DOF) quantum mechanically, and the nuclear phononic DOF classically. Our numerical simulations of the angle-resolved photoluminescence (PL) agree excellently with the experimental data, providing a fundamental explanation of the asymmetric intensity distribution of the upper and lower polariton branches. Our results also provide mechanistic insights into the importance of phonon-assisted non-adiabatic transitions among polariton states which are reflected in the various features of the PL spectra. Our work proves the feasibility of coupling nanoplatelets into a dielectric cavity to form a hybrid system and provides a new platform for investigating cavity-mediated physical and chemical processes.

scholarly journals Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
W. W. Wang ◽  
F. M. Guo ◽  
Y. Q. Li
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Reverse Bias ◽  
Detection Efficiency ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Device Structure ◽  
High Quantum Efficiency ◽  
Gaas Quantum Dot

We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.

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