Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density

2006 ◽  
Author(s):  
Chung-Chi Liao ◽  
Shiang-Feng Tang ◽  
Tzu-Chiang Chen ◽  
Cheng-Der Chiang ◽  
San-Te Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Temperature Dependent ◽  
Noise Density ◽  
Gaas Quantum Dot

Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

2006 ◽  
Vol 935 ◽  
Author(s):  
William Kerr ◽  
Valeria Gabriela Stoleru ◽  
Anup Pancholi
Keyword(s):  
Quantum Dot ◽  
Electronic Properties ◽  
Temperature Dependent ◽  
Quantum Dot Molecules ◽  
Gaas Barrier ◽  
Optical And Electronic Properties ◽  
Gaas Quantum Dot ◽  
Photoluminescence Studies ◽  
Stacked Quantum Dots ◽  
Good Agreement

ABSTRACTWe investigate experimentally and theoretically optical and electronic properties of In0.3Ga0.7As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In0.3Ga0.7As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.

scholarly journals Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

2011 ◽  
Vol 98 (18) ◽  
pp. 183509 ◽  
Author(s):  
Hao Feng Lu ◽  
Lan Fu ◽  
Greg Jolley ◽  
Hark Hoe Tan ◽  
Sudersena Rao Tatavarti ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Dark Current ◽  
Quantum Dot Solar Cells ◽  
Gaas Quantum Dot

scholarly journals Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures

2016 ◽  
Vol 48 (3) ◽  
Author(s):  
Andrius Rimkus ◽  
Evelina Pozingytė ◽  
Ramūnas Nedzinskas ◽  
Bronislovas Čechavičius ◽  
Julius Kavaliauskas ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Temperature Dependent ◽  
Gaas Quantum Dot
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