scholarly journals The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Donghua Liu ◽  
Xiangming Xu ◽  
Feng Jin ◽  
Wenting Duan ◽  
Huihui Wang ◽  
...  

This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp= 7.88 ohm * mm2) are achieved.

2003 ◽  
Vol 0 (7) ◽  
pp. 2347-2350 ◽  
Author(s):  
Yoshiharu Takada ◽  
Wataru Saito ◽  
Masahiko Kuraguchi ◽  
Ichiro Omura ◽  
Kunio Tsuda

2021 ◽  
Author(s):  
Ching-Kuei Shih ◽  
Chih-Cherng Liao ◽  
Karuna Nidhi ◽  
Kai-Chuan Kan ◽  
Ke-Horng Chen ◽  
...  

2020 ◽  
Vol 34 (7) ◽  
pp. 8857-8863
Author(s):  
Yongfeng Liu ◽  
Shijie Bai ◽  
Ping Wei ◽  
Pucheng Pei ◽  
Shengzhuo Yao ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document