Field-plate effects on the breakdown voltage of an integrated high-voltage LDMOS transistor

2004 ◽  
Author(s):  
Hossain ◽  
Ishigwo ◽  
Tu ◽  
Corleto ◽  
Kuramae ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Field Plate

scholarly journals The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Donghua Liu ◽  
Xiangming Xu ◽  
Feng Jin ◽  
Wenting Duan ◽  
Huihui Wang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Field Plate ◽  
Plate Design ◽  
Drift Length ◽  
Drain Side ◽  
Resistance Performance

This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp= 7.88 ohm * mm2) are achieved.

High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

2003 ◽  
Vol 0 (7) ◽  
pp. 2347-2350 ◽  
Author(s):  
Yoshiharu Takada ◽  
Wataru Saito ◽  
Masahiko Kuraguchi ◽  
Ichiro Omura ◽  
Kunio Tsuda
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Field Plate ◽  
Plate Technique ◽  
Switching Characteristics

The Mechanism of Field-Plate Induced the Breakdown Voltage Change of High Voltage LDMOS

2021 ◽  
Author(s):  
Ching-Kuei Shih ◽  
Chih-Cherng Liao ◽  
Karuna Nidhi ◽  
Kai-Chuan Kan ◽  
Ke-Horng Chen ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Field Plate ◽  
Voltage Change

On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon

2021 ◽  
Author(s):  
Luigi Balestra ◽  
Susanna Reggiani ◽  
Antonio Gnudi ◽  
Elena Gnani ◽  
Jagoda Dobrzynska ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Diamond Like Carbon ◽  
Power Diode

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

High-voltage planar devices using field plate and semi-resistive layers

1991 ◽  
Vol 38 (7) ◽  
pp. 1681-1684 ◽  
Author(s):  
D. Jaume ◽  
G. Charitat ◽  
J.M. Reynes ◽  
P. Rossel
Keyword(s):  
High Voltage ◽  
Field Plate

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

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