Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design

2015 ◽  
Vol 62 (3) ◽  
pp. 882-887 ◽  
Author(s):  
Jhen-Yu Tsai ◽  
Hsin-Hui Hu
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Field Plate ◽  
Plate Design

scholarly journals A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 514 ◽  
Author(s):  
Feng-Tso Chien ◽  
Kuang-Po Hsueh ◽  
Zhen-Jie Hong ◽  
Kuan-Ting Lin ◽  
Yao-Tsung Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Impact Ionization ◽  
Thin Film Transistor ◽  
Ionization Rate ◽  
Field Plate ◽  
Current Path ◽  
Plate Design ◽  
Impact Ionization Rate ◽  
A Current

In this study, a novel low impact ionization rate (low-IIR) poly-Si thin film transistor featuring a current and electric field split (CES) structure with bottom field plate (BFP) and partial thicker channel raised source/drain (RSD) designs is proposed and demonstrated. The bottom field plate design can allure the electron and alter the electron current path to evade the high electric field area and therefore reduce the device IIR and suppress the kink effect. A two-dimensional device simulator was applied to describe and compare the current path, electric field magnitude distributions, and IIR of the proposed structure and conventional devices. In addition, the advantages of a partial thicker channel RSD design are present, and the leakage current of CES-thin-film transistor (TFT) can be reduced and the ON/OFF current ratio be improved, owing to a smaller drain electric field.

Polysilicon High-Voltage TFT with Field-Plate-Controlled Offset Region

1990 ◽  
Vol 182 ◽  
Author(s):  
T. Y. Huang ◽  
I. W. Wu ◽  
A. G. Lewis ◽  
A. Chiang ◽  
R. H. Bruce
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Ion Implantation ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Large Area ◽  
Process Flow ◽  
Field Plate ◽  
Turn On ◽  
Lightly Doped Drain

AbstractAn improved polysilicon high voltage thin film transistor (HVTFT) structure with field-plate-controlled offset region (FP-HVTFT) is proposed for eliminating the current-pinching phenomena often observed in the conventional offset-gate polysilicon HVTFTs. The new metal field plate serves, in lieu of ion implantation, to control the conductivity of the offset region. By properly biasing the field plate to distribute the drain electric field at both ends of the offset region, high-voltage operation of up to 100 V, suitable for many large-area applications, is achieved. Good turn-on characteristics without current-pinching effects are consistently obtained. Moreover, the new FP-HVTFT also eliminates the lightly-doped-drain implant normally required in conventional offset-gate HVTFTs, resulting in a simpler and more reproducible process flow.

Polycrystalline silicon thin film transistor incorporating a semi-insulating field plate for high voltage circuitry on glass

1997 ◽  
Vol 71 (14) ◽  
pp. 2002-2004 ◽  
Author(s):  
F. J. Clough ◽  
E. M. Sankara Narayanan ◽  
Y. Chen ◽  
W. Eccleston ◽  
W. I. Milne
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Field Plate

High Voltage, Moderate Current Thin Film Transistor for Actuator Applications

2019 ◽  
Vol 11 (14) ◽  
pp. 31-39 ◽  
Author(s):  
Abbas Jamshidi-Roudbari ◽  
Po-Chin Kuo ◽  
Miltiadis Hatalis
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor

High voltage polycrystalline thin-film transistor with variable doping slots in the offset region

2002 ◽  
Vol 80 (12) ◽  
pp. 2192-2194 ◽  
Author(s):  
Y. Z. Xu ◽  
R. Cross ◽  
Meenakshi Manhas ◽  
F. J. Clough ◽  
M. M. DeSouza ◽  
...  
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Polycrystalline Thin Film

scholarly journals Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31386-31397 ◽  
Author(s):  
Nico Koslowski ◽  
Rudolf C. Hoffmann ◽  
Vanessa Trouillet ◽  
Michael Bruns ◽  
Sabine Foro ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Yttrium Oxide ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Oxide Formation ◽  
Molecular Precursor ◽  
P Transformation ◽  
Precursor Route

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

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