scholarly journals Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Ko-Ying Pan ◽  
Yu-Hung Lin ◽  
Po-Sheng Lee ◽  
Jyh-Ming Wu ◽  
Han C. Shih
Keyword(s):  
Potential Application ◽  
Recovery Time ◽  
Tin Dioxide ◽  
Uv Light ◽  
Atomic Layer ◽  
Core Shell ◽  
Uv Photodetectors ◽  
Zinc Oxides ◽  
Layer Deposition ◽  
Shell Nanowires

Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO2-ZnO core-shell nanowires is 100 nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 925 Ω, which is much lower than pure SnO2nanowires (3.6 × 106 Ω). The result of UV light test shows that the recovery time of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO2nanowires (938 seconds). These results demonstrated that the SnO2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties.

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

scholarly journals Modification of 1D TiO2 nanowires with GaOxNy by atomic layer deposition for TiO2@GaOxNy core–shell nanowires with enhanced photoelectrochemical performance

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 7159-7173 ◽  
Author(s):  
Jia-Jia Tao ◽  
Hong-Ping Ma ◽  
Kai-Ping Yuan ◽  
Yang Gu ◽  
Jian-Wei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Light Absorption ◽  
Atomic Layer ◽  
Band Alignment ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Tio2 Nanowires ◽  
Layer Deposition ◽  
Shell Nanowires

The excellent PEC activity of TiO2 nanowires with GaOxNy results from the enhanced light absorption, favourable band alignment, and high reducibility.

Formation of Silicide Nanowires by Annealing of Atomic Layer Deposition Cobalt/Silicon Core-Shell Nanowires

2019 ◽  
Vol 25 (4) ◽  
pp. 157-161
Author(s):  
Han-Bo-Ram Lee ◽  
Kwang Heo ◽  
Seunghun Hong ◽  
Hyungjun Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Core Shell ◽  
Layer Deposition ◽  
Shell Nanowires

Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires

2013 ◽  
Vol 69 (10) ◽  
pp. 744-747 ◽  
Author(s):  
Francesca Rossi ◽  
Filippo Fabbri ◽  
Massimo Tallarida ◽  
Dieter Schmeisser ◽  
Mircea Modreanu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Luminescence Properties ◽  
Core Shell ◽  
Layer Deposition ◽  
Shell Nanowires

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Fabrication of Nanocomposite Based on ZnO Nanowire

2008 ◽  
Vol 8 (9) ◽  
pp. 4895-4898
Author(s):  
Sun Sook Lee ◽  
Hyun Jin Kim ◽  
Taek-Mo Chung ◽  
Young Kuk Lee ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer ◽  
Thermal Reduction ◽  
Zno Nanowires ◽  
Core Shell ◽  
Zno Nanoparticle ◽  
Zno Nanowire ◽  
Si Substrates ◽  
Layer Deposition ◽  
Shell Nanowires

ZnO-NiO core–shell nanowires and Ni-ZnO nanoparticle–nanowire composites have been synthesized by atomic layer deposition (ALD) and H2 thermal reduction, respectively. Grown ZnO nanowires on Si substrates by vapor transport method were used as templates for the growth of NiO layers. In order to prevent interfacial interaction between deposited NiO and ZnO nanowires templates by the reaction at low temperature and to precisely control the thickness of NiO layer, ALD technique was suitably employed to form the ZnO-NiO core–shell nanowires. All surface area of ZnO nanowires was completely and uniformly covered by amorphous NiO layers at low temperature of 130 °C. The Ni-ZnO nanoparticle–nanowire composites were achieved by the thermal reduction of the ZnO-NiO core–shell nanowires at H2 atmosphere. The density of Ni nanoparticles on ZnO nanowires was roughly related to the pre-deposited NiO thickness and the inter-diffusion of Ni into the ZnO nanowire was not observed.

ZnO/ZnS Core-Shell Nanowires Arrays on Ni Foam Prepared by Atomic Layer Deposition for High Performance Supercapacitors

2017 ◽  
Vol 164 (14) ◽  
pp. A3493-A3498 ◽  
Author(s):  
Yan-Qiang Cao ◽  
Xu Qian ◽  
Wei Zhang ◽  
Shan-Shan Wang ◽  
Min Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Core Shell ◽  
Ni Foam ◽  
Layer Deposition ◽  
Shell Nanowires
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