Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

2016 ◽  
Vol 34 (1) ◽  
pp. 01A110 ◽  
Author(s):  
Yu-Chang Lin ◽  
Hsin-Ying Lee ◽  
Tsung-Hsin Lee
Keyword(s):  
Hydrogen Peroxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors

Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide

2001 ◽  
Vol 231 (1-2) ◽  
pp. 262-272 ◽  
Author(s):  
Kaupo Kukli ◽  
Katarina Forsgren ◽  
Jaan Aarik ◽  
Teet Uustare ◽  
Aleks Aidla ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Enhanced Performance of Mg0.1Zn0.9O UV Photodetectors Using Photoelectrochemical Treatment and Silica Nanospheres

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Yu-Chang Lin ◽  
Meng-Ju Lee ◽  
Wu-Yih Uen ◽  
Kondepudy Sreenivas
Keyword(s):  
Active Layer ◽  
Bias Voltage ◽  
Incident Light ◽  
Atomic Layer ◽  
Silica Nanospheres ◽  
Uv Photodetectors ◽  
Layer Deposition ◽  
Metal Semiconductor Metal ◽  
Uv Visible ◽  
Ultraviolet Photodetectors

The Mg0.1Zn0.9O films were grown using atomic layer deposition (ALD) system and applied to metal-semiconductor-metal ultraviolet photodetectors (MSM-UPDs) as an active layer. To suppress the dangling bonds on the Mg0.1Zn0.9O surface, the photoelectrochemical (PEC) treatment was used to passivate the Mg0.1Zn0.9O surface, which could reduce the dark current of the MSM-UPDs about one order. Beside, to increase more incident light into the Mg0.1Zn0.9O active layer of the MSM-UPDs, the 500-nm-diameter silica nanospheres were spin-coated on the Mg0.1Zn0.9O active layer to improve the antireflection capability at the wavelength of 340 nm. The reflectivity of the Mg0.1Zn0.9O films with silica nanospheres antireflection layer decreased about 7.0% in comparison with the Mg0.1Zn0.9O films without silica nanospheres. The photocurrent and UV-visible ratio of the passivated Mg0.1Zn0.9O MSM-UPDs with antireflection layer were enhanced to 5.85 μA and1.44×104, respectively, at the bias voltage of 5 V. Moreover, the noise equivalent power and the specific detectivity of the passivated Mg0.1Zn0.9O MSM-UPDs with antireflection layer were decreased to2.60×10-13 W and increased to1.21×1012 cmHz1/2W−1, respectively, at the bias voltage of 5 V. According to the above mentions, the PEC treatment and silica nanospheres antireflection layer could effectively enhance the performance of Mg0.1Zn0.9O MSM-UPDs.

Atomic layer deposition-developed two-dimensional α-MoO3 windows excellent hydrogen peroxide electrochemical sensing capabilities

2018 ◽  
Vol 262 ◽  
pp. 334-344 ◽  
Author(s):  
Zihan Wei ◽  
Zhenyin Hai ◽  
Mohammad Karbalaei Akbari ◽  
Dongchen Qi ◽  
Kaijian Xing ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrochemical Sensing ◽  
Two Dimensional ◽  
Layer Deposition

Advantages of Hydrogen Peroxide as an Oxidant for Atomic Layer Deposition and Related Novel Delivery System

2013 ◽  
Vol 1494 ◽  
pp. 209-214 ◽  
Author(s):  
Jeff Spiegelman ◽  
Dan Alvarez ◽  
Russell J. Holmes ◽  
Ed Heinlein ◽  
Zohreh Shamsi
Keyword(s):  
Hydrogen Peroxide ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxidation Properties ◽  
Temperature And Pressure ◽  
Phase Chemistry ◽  
Transfer Properties

ABSTRACTProposed is the use of Hydrogen Peroxide (H2O2) as the ideal oxidant for atomic layer deposition of metal oxide films. H2O2 has similar oxidation properties to Ozone while simultaneously having slightly stronger proton transfer properties than water. Vital to the success of any vapor phase chemistry is delivery of stable compositions, temperature and pressure. This study demonstrates the viability of a new membrane technology for the precise delivery of H2O2/ H2O mixtures starting from a liquid range of 30-70%. An in-situ gas phase cleaning process to remove carbon contamination from Ge(100) surfaces using gas phase H2O2 has been characterized.

scholarly journals Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6159
Author(s):  
Shao-Yu Chu ◽  
Meng-Xian Shen ◽  
Tsung-Han Yeh ◽  
Chia-Hsun Chen ◽  
Ching-Ting Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Bandgap Energy ◽  
X Ray ◽  
Active Layers ◽  
Layer Deposition ◽  
Measurement Results ◽  
Ultraviolet C ◽  
Ultraviolet Photodetectors

In this work, Ga2O3 films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O2) plasma. To improve the quality of Ga2O3 films, they were annealed in an O2 ambient furnace system for 15 min at 700, 800, and 900 °C, respectively. The performance improvement was verified from the measurement results of X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The optical bandgap energy of the Ga2O3 films decreased with an increase of annealing temperatures. Metal-semiconductor-metal ultraviolet C photodetectors (MSM UVC-PDs) with various Ga2O3 active layers were fabricated and studied in this work. The cut-off wavelength of the MSM UVC-PDs with the Ga2O3 active layers annealed at 800 °C was 250 nm. Compared with the performance of the MSM UVC-PDs with the as-grown Ga2O3 active layers, the MSM UVC-PDs with the 800 °C-annealed Ga2O3 active layers under a bias voltage of 5 V exhibited better performances including photoresponsivity of 22.19 A/W, UV/visible rejection ratio of 5.98 × 104, and detectivity of 8.74 × 1012 cmHz1/2W−1.

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