scholarly journals A Review on Conduction Mechanisms in Dielectric Films

2014 ◽  
Vol 2014 ◽  
pp. 1-18 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Dielectric Materials ◽  
Dielectric Films ◽  
Physical Parameters ◽  
Dielectric Relaxation Time ◽  
Trap Level ◽  
Dielectric Interface ◽  
Conduction Mechanisms ◽  
Limited Conduction

The conduction mechanisms in dielectric films are crucial to the successful applications of dielectric materials. There are two types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited conduction mechanism. The electrode-limited conduction mechanism depends on the electrical properties at the electrode-dielectric interface. Based on this type of conduction mechanism, the physical properties of the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers in dielectric films can be extracted. The bulk-limited conduction mechanism depends on the electrical properties of the dielectric itself. According to the analyses of bulk-limited conduction mechanisms, several important physical parameters in the dielectric films can be obtained, including the trap level, the trap spacing, the trap density, the carrier drift mobility, the dielectric relaxation time, and the density of states in the conduction band. In this paper, the analytical methods of conduction mechanisms in dielectric films are discussed in detail.

scholarly journals Poole-Frenkel Conduction in Cu/Nano-SnO2/Cu Arrangement

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hossein Mahmoudi Chenari ◽  
Hassan Sedghi ◽  
Mohammad Talebian ◽  
Mir Maqsoud Golzan ◽  
Ali Hassanzadeh
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Current Flow ◽  
Sandwich Structures ◽  
Conduction Band Edge ◽  
Flow Mechanism ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Limited Conduction

It is well known that metal/Tin-dioxide/metal sandwich structures exhibit a field-assisted lowering of the potential barrier between donor-like center and the conduction band edge, known as the Poole-Frenkel effect. This behavior is indicated by a linear dependence of Iog  on , where is the current density, and is the applied voltage. In this study, the electrical properties of Cu/nano-SnO2/Cu sandwich structures were investigated through current-voltage measurements at room temperature. Also, an attempt to explore the governing current flow mechanism was tried. Our results indicate that noticeable feature appearing clearly in the current-voltage characterization is the Poole-Frenkel and space-charge-limited conduction mechanisms.

Frequency spectrum of the electrical properties of seawater-saturated ocean crust and oceanic island basalts

1978 ◽  
Vol 15 (9) ◽  
pp. 1489-1495 ◽  
Author(s):  
M. J. Drury
Keyword(s):  
Electrical Properties ◽  
Frequency Spectrum ◽  
Conduction Mechanism ◽  
Oceanic Island ◽  
Pore Fluid ◽  
Membrane Polarization ◽  
Conduction Mechanisms ◽  
Metallic Mineral ◽  
Dominant Conduction Mechanism ◽  
Oceanic Island Basalts

The frequency spectrum of electrical properties of seawater-saturated oceanic crust and oceanic island basalts has been studied. All samples showed at least two of three possible polarization mechanisms: dielectric, membrane, and electrode. The membrane polarization appears to result from the presence of clay minerals, which frequently line or block pores and cracks in the samples. The dominant conduction mechanism in the samples is pore fluid (seawater) conduction, but the electrical properties of samples containing clay are modified by the clay. The results support the suggestion by Drury that a model of three conduction mechanisms acting approximately in parallel—pore fluid, clay mineral, and metallic mineral conduction—describes the electrical properties of seawater-saturated basalts.

PREPARATION AND ELECTRICAL PROPERTIES OF BiFeO3/La0.7Sr0.3MnO3 MULTILAYERS

2013 ◽  
Vol 27 (17) ◽  
pp. 1350128
Author(s):  
HUIWEN ZHU ◽  
SHUNLI WANG ◽  
XIAOYUN LI
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Conduction Mechanism ◽  
Rf Magnetron Sputtering ◽  
Electric Transport ◽  
Tunneling Conduction ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Lower Temperature Region ◽  
Limited Conduction

( La 0.7 Sr 0.3 MnO 3 12 nm/ BiFeO 3 12 nm)10 was grown on SrTiO 3 (001) substrate using rf magnetron sputtering. The structure analysis indicated that BiFeO 3/ La 0.7 Sr 0.3 MnO 3 multilayers were highly (001)-oriented. Compared with bottom La 0.7 Sr 0.3 MnO 3 electrode, the top La 0.7 Sr 0.3 MnO 3 electrode displayed a rougher surface. The electric transport characteristics of the sample were investigated mainly at low temperature, and it was found that the sample exhibited resistance–temperature curves similar to those of La 0.7 Sr 0.3 MnO 3 with the exception of an upturn at lower temperature region. Furthermore, a nonlinear I–V curve, which is characteristic of a tunneling conduction mechanism, was observed at 50 K. At higher temperature, the I–V curves were found to be diode-like. When the temperature was further increased to 300 K, the sample showed a space charge limited conduction (SCLC) characteristic.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Laser-induced deposition of copper from deep eutectic solvents: optimization of chemical and physical parameters

2021 ◽  
Author(s):  
Andrey Shishov ◽  
Dmitry Gordeychuk ◽  
Lev Logunov ◽  
Elena Danilova ◽  
Aleksandra Levshakova ◽  
...  
Keyword(s):  
Deep Eutectic Solvents ◽  
Dielectric Materials ◽  
Physical Parameters ◽  
Physical Methods

Fabrication of the conductive copper structures on the surface of various dielectric materials is quite important for many fields of science. There are a lot of chemical and physical methods...

Synthesis, optical, and electrical properties of starch/chitosan/NaTiO3 bio-nanocomposites modified with ErCl3

2021 ◽  
Author(s):  
Adel M. El Sayed ◽  
Samy El-Gamal
Keyword(s):  
Electrical Properties ◽  
Smart Materials ◽  
Conduction Mechanism ◽  
Industrial Applications ◽  
Solid Polymer Electrolytes ◽  
Solid Polymer ◽  
Optical And Electrical Properties ◽  
Casting Method ◽  
Dielectric Parameters ◽  
Electron Effective Mass

Abstract Solid polymer electrolytes (SPEs) based on nanocomposites are attracting increasing attention due to their technological and industrial applications. In the present work, a facile aqueous casting method was utilized for the preparation of a starch-chitosan blend loaded with nanosized NaTiO3 (NTO) and co-mixed with ErCl3 (EC) salt. The interactions between OH group of starch and N–H group of chitosan with NTO and EC, and the films' crystallinity and surface morphology were studied by FTIR, XRD, and SEM. UV-Vis-NIR measurements showed the indirect (direct) optical band gaps decreased from 3.4 to 2.0 eV (4.5 to ~ 2.5 eV), i.e., ~ 41–44 % shrinking. At the time that the films maintained a reasonable transmittance. The optical constants of the films; extinction coefficient, refractive index, and the carrier’s concentration to the electron effective mass (N/m*) are reported. N/m* of the pure blend was 4.85 x 1039 (kg-1 m-3) increased to 1.64 times and 2.8 times after loading with 1.0% NTO and 20% EC, respectively. Various dielectric parameters (dielectric constant ε', dielectric loss ε'', ac conductivity σac, and dielectric moduli M' & M'') were evaluated in the frequency range 5 Hz - 1 MHz and temperatures of 298 - 353 K. The conductivity (σac) of the blend increased from 1.10×10-3 S/cm to 8.17×10-3 S/cm after modifying with 20% EC, i.e., became 8 times greater. Moreover, the influence of NTO and EC on the conduction mechanism and Cole-Cole plots are discussed. The improvements in the optical and electrical properties of EC/NTO/blend illustrate the possibility of extending the applications of these smart materials to include optoelectronic devices, batteries, and supercapacitors.

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