scholarly journals Poole-Frenkel Conduction in Cu/Nano-SnO2/Cu Arrangement

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hossein Mahmoudi Chenari ◽  
Hassan Sedghi ◽  
Mohammad Talebian ◽  
Mir Maqsoud Golzan ◽  
Ali Hassanzadeh
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Current Flow ◽  
Sandwich Structures ◽  
Conduction Band Edge ◽  
Flow Mechanism ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Limited Conduction

It is well known that metal/Tin-dioxide/metal sandwich structures exhibit a field-assisted lowering of the potential barrier between donor-like center and the conduction band edge, known as the Poole-Frenkel effect. This behavior is indicated by a linear dependence of Iog  on , where is the current density, and is the applied voltage. In this study, the electrical properties of Cu/nano-SnO2/Cu sandwich structures were investigated through current-voltage measurements at room temperature. Also, an attempt to explore the governing current flow mechanism was tried. Our results indicate that noticeable feature appearing clearly in the current-voltage characterization is the Poole-Frenkel and space-charge-limited conduction mechanisms.

Schottky Barriers on p-GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
N.I. Kuznetsov ◽  
E.V. Kalinina ◽  
V.A. Soloviev ◽  
V.A. Dmitriev
Keyword(s):  
Room Temperature ◽  
Current Flow ◽  
Thermal Evaporation ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
Flow Mechanism ◽  
Vacuum Thermal Evaporation ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.

Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Electrical Properties ◽  
Liquid Nitrogen ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Nanocrystalline Films ◽  
Current Voltage ◽  
Evaporation Technique

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Electrical Properties of GaAs Implanted with High Energy (100meV) 28Si and 120Sn Ions

2021 ◽  
pp. 77-92
Author(s):  
يوسف بيار علي ◽  
سلوان كمال جميل العاني ◽  
بريج موهن ارورا
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Annealing Treatment ◽  
High Energy ◽  
Strong Nonlinearity ◽  
Conduction Mechanisms ◽  
Gaas Substrates ◽  
Current Voltage ◽  
Back Ward

Single crystal n-GaAs substrates have been implanted at 300 K with 100 MeV 28Si and 120Sn ions to a dose of 1x1018ions/m2 independently. The electrical properties of these samples has been investigated and compared after implantation and annealing up to 850 °C by current voltage (I-V) measurements. It has been observed that the I-V curves for the samples implanted with 28Si ions show p-n junction like characteristics which then show a linear I-V characteristics for the annealing treatment between 150-550 °C. Annealing the samples at 650 °C results in a typical diode like I-V characteristics which become less non-linear after further annealing at 750 °C. Further annealing at 850 °C results in to a back ward diode like behavior. However the I-V curves for the samples implanted with 120Sn ions and annealed up to 450C were linear which then show a weak non linearity for the annealing treatments between 550C-750C. After 850C annealing the samples show a strong nonlinearity typical of a p-n junction. The temperature dependence of resistance of both 28Si and 120Sn implanted GaAs samples after implantation and different annealing steps are investigated and the possible conduction mechanisms are discussed.

Electrical Properties of Graphene Oxide Layers Prepared by Material Inkjet Printing

2016 ◽  
Vol 674 ◽  
pp. 109-114 ◽  
Author(s):  
Jan Pospisil ◽  
Veronika Schmiedova ◽  
Oldrich Zmeskal ◽  
Viliam Vretenar ◽  
Peter Kotrusz
Keyword(s):  
Electrical Conductivity ◽  
Graphene Oxide ◽  
Electrical Properties ◽  
Inkjet Printing ◽  
Room Temperature ◽  
Electronic Devices ◽  
Dielectric Measurements ◽  
Current Voltage ◽  
Bulk Electrical Conductivity ◽  
Current Voltage Characteristics

The paper deals with the study of optical and electrical properties of inkjet-printed graphene oxide (GO) layers, which can be used e.g. for the preparation of various types of electronic devices. To ensure stable inkjet printing conditions of GO solution, mixture was thoroughly stirred for 1 h at room temperature or sonicated in the bath for 30 min. The thicknesses of prepared layers were determined by spectroscopic ellipsometry and profilometry. An electrical conductivity of GO was increased by the multistep reduction (due to annealing) – the conductivity was changed by these processes about seven orders of magnitude (GO is an isolator and reduced GO is a conductor). For electrical and dielectric measurements, samples with GO and mixture of GO with PEDOT were prepared. All current-voltage characteristics have a diode character. From AC measurements the bulk electrical conductivity and geometric capacity of prepared layers were determined.

Influence of iodine on the electrical properties of magnesium phthalocyanines thin film devices

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 20-29 ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Electrical Parameters ◽  
Trapping Level ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction ◽  
Thin Film Devices

AbstractThe influence of iodine on the electrical properties of sandwich structures of magnesium phthalocyanine (Mg Pc) thin films with gold and aluminium electrodes has been investigated. The various electrical properties and different electrical parameters of the iodine-doped Mg Pc thin film devices have been estimated and compared with the values of normal Mg Pc devices from the analysis of the current-voltage characteristics. Generally samples showed an asymmetric conductivity both under forward and reverse bias. From our study we found that iodine doped Mg Pc films showed an enhanced electrical conductivity of nearly ten times that of typical Mg Pc. At low voltages the films showed an ohmic conduction with a hole concentration of P0 = 6.34 × 1018 m−3 and hole mobility μ = 9.16 × 10−5 m 2 V−1 s−1, whereas at higher voltage levels the conduction is dominated by space charged limited conduction (SCLC) with a discrete trapping level of 1.33 × 1022 m−3 at 0.63 eV above the valance band edge. The ratio of the free charges to trapped charges (trapping factor) for the doped samples was found to be 1.07 × 10−7. Furthermore the reverse conduction mechanisms have also been investigated. From the current limitations in the reverse condition a strong rectifying behaviour was evident which was attributed to Poole-Frankel emission with a field-lowering coefficient of value 2.24 × 10−5 eV m1/2 V−1/2.

scholarly journals On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Bogdan Bita ◽  
Sorin Vizireanu ◽  
Daniel Stoica ◽  
Valentin Ion ◽  
Sasa Yehia ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Carbon Nanowalls ◽  
P Type ◽  
Top View

In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N2) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D′-band, 2D-band, and D+G-band. The average values of the electrical resistance of fabricated samples were evaluated by current-voltage characteristics acquired at room temperature, in the ranges of 0 V–0.2 V, and an increase was noticed with about 50% after the Ar/N2 postsynthesis plasma treatment compared to pristine samples. Moreover, the Hall measurements proved that the obtained CNW structures had p-type conductivity (Hall coefficient was 0.206 m3/C), and the concentration of charge carriers was 7.8×1019 cm-3, at room temperature.

scholarly journals A Review on Conduction Mechanisms in Dielectric Films

2014 ◽  
Vol 2014 ◽  
pp. 1-18 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Dielectric Materials ◽  
Dielectric Films ◽  
Physical Parameters ◽  
Dielectric Relaxation Time ◽  
Trap Level ◽  
Dielectric Interface ◽  
Conduction Mechanisms ◽  
Limited Conduction

The conduction mechanisms in dielectric films are crucial to the successful applications of dielectric materials. There are two types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited conduction mechanism. The electrode-limited conduction mechanism depends on the electrical properties at the electrode-dielectric interface. Based on this type of conduction mechanism, the physical properties of the barrier height at the electrode-dielectric interface and the effective mass of the conduction carriers in dielectric films can be extracted. The bulk-limited conduction mechanism depends on the electrical properties of the dielectric itself. According to the analyses of bulk-limited conduction mechanisms, several important physical parameters in the dielectric films can be obtained, including the trap level, the trap spacing, the trap density, the carrier drift mobility, the dielectric relaxation time, and the density of states in the conduction band. In this paper, the analytical methods of conduction mechanisms in dielectric films are discussed in detail.

Evidence of Defect Migration and Clustering in MeV Heavy Ion Damaged Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
Y.N. Mohapatra ◽  
P.K. Girl
Keyword(s):  
Room Temperature ◽  
Deep Level ◽  
Heavy Ion ◽  
High Dose ◽  
Defect Migration ◽  
Defect Profile ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Limited Conduction

AbstractWe have studied electrically active defects created by MeV heavy ion implantation in n-silicon. The buried damaged layer, created by implanting Ar’ ions of energy 1.45 MeV and doses in the range 1013-1014 cm−2 at room temperature, is embedded within the depletion layer of a Schottky diode. The defects are characterized using capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS). Large concentration of electrically active defects are found to occur in a region several microns beyond the ion range or the damage profile predicted by Monte Carlo simulations. The dominance of a single trap in the damaged region is established from hysteresis effect in C-V, space charge limited conduction in forward I-V characteristics and DLTS results. With annealing in the temperature range of 400-600C, the observed changes in defect charge profile indicate that the effective electrical interface moves progressively towards the surface. C-V characteristics have been simulated using model charge profiles which suggest presence of a compensated region and a sharp negatively charged defect profile at a distance much larger than that expected from ion range. Our results constitute experimental evidence of migration and clustering of interstitial related defects, even at room temperature in case of high dose irradiation.

Influence of La2O3 on the Electrical Properties of Dense SnO2 Electrodes

2011 ◽  
Vol 675-677 ◽  
pp. 171-174 ◽  
Author(s):  
Qing Wei Wang ◽  
Hong Zhi Wang ◽  
Wei Ning
Keyword(s):  
Electron Microscopy ◽  
Electrical Properties ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sno2 Powder ◽  
Traditional Ceramics ◽  
Scanning Electron

We prepared La2O3 doped SnO2 powder by a co-deposition method and used the doped material to manufacture tin dioxide electrodes by traditional ceramics methods.. The results showed that La2O3 led to an obvious decrease in electrical resistivity at room temperature but it had little influence at temperatures higher than 600 °C. The samples were characterized by X-ray diffraction and section scanning electron microscopy. We found that La2O3 increased the rate of tin dioxide crystal growth. At La2O3 concentrations as high as 1 wt%, a new La2Sn2O7 phase was present and this phase plays an important role in improving the electrical properties of the La2O3-doped SnO2.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

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