scholarly journals Emission Mechanisms of Si Nanocrystals and Defects in SiO2Materials

2014 ◽  
Vol 2014 ◽  
pp. 1-17 ◽  
Author(s):  
José Antonio Rodríguez ◽  
Marco Antonio Vásquez-Agustín ◽  
Alfredo Morales-Sánchez ◽  
Mariano Aceves-Mijares
Keyword(s):  
Silicon Dioxide ◽  
Point Defects ◽  
Silicon Content ◽  
Silicon Oxide ◽  
Light Emission ◽  
Light Emitting ◽  
Si Nanocrystals ◽  
The World ◽  
Silicon Materials ◽  
Silicon Silicon

Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2is presented.

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

Localized Laser-Assisted Deposition of Silicon,Silicon Nitride and Silicon Dioxide

1987 ◽  
Vol 101 ◽  
Author(s):  
Geoffrey Auvert ◽  
Yves Pauleau ◽  
Didier Tonneau
Keyword(s):  
Growth Rate ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Unsolved Problem ◽  
Experimental Conditions ◽  
Formation Kinetics ◽  
Silicon Based ◽  
Kinetics Of ◽  
Silicon Silicon

ABSTRACTThe localized laser-induced deposition of an insulator for silicon-based microelectronics seems to be an unsolved problem. In order to understand the limiting mechanism in the deposition, the formation kinetics of silicon, silicon oxide and silicon nitride using various laser wavelengths and gas mixtures have been studied Depending upon wavelength and laser-induced temperature, various chemical reactions are involved. In the presence of ammonia, the growth rate of silicon nitride dots was found to be lower than the corresponding silicon deposition rate, indicating that deposition starts with silane decomposition followed by nitridation of silicon. By evaluating the influence of the wavelengths, the existence of a photolytic aided reaction is detected in the presence of 2.4 eV photons. In the presence of oxygen molecules and under most experimental conditions, no deposition occurs. The formation of volatile intermediate compounds can explain the difficulty of locally depositing silicon dioxide.

Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures

2007 ◽  
Vol 131-133 ◽  
pp. 65-70 ◽  
Author(s):  
M. Baran ◽  
N. Korsunska ◽  
L. Khomenkova ◽  
T. Stara ◽  
V. Khomenkov ◽  
...  
Keyword(s):  
Spectral Range ◽  
Silicon Oxide ◽  
Light Emission ◽  
Annealing Treatment ◽  
Light Emitting ◽  
Emission Properties ◽  
Preparation Conditions ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Oxide Defects

The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

1996 ◽  
Vol 438 ◽  
Author(s):  
I. E. Tyschenko ◽  
G. A. Kachurin ◽  
K. S. Zhuravlev ◽  
N. A. Pazdnikov ◽  
V. A. Volodin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Near Infrared ◽  
Light Emission ◽  
High Resolution Electron Microscopy ◽  
Structural Transformations ◽  
Light Sources ◽  
Furnace Annealing ◽  
Si Nanocrystals ◽  
Resolution Electron

AbstractStrong blue, red and near-infrared photoluminescence has been observed from Si+-implanted and pulse-annealed SiO2 layers. Raman scattering and high-resolution electron microscopy analyses have revealed a correlation between the structure of the Si inclusions in the SiO2 matrix and the photoluminescence. Structural transformations in the Si-rich SiO2 layers during pulse and furnace annealing have been discussed in terms of the changes in the light emission observed experimentally. Small Si clusters, non-crystalline inclusions and nanocrystals are believed to be the light sources. The blue, red and near-infrared photoluminescence is associated with small complexes of excess Si atoms, non-crystalline Si nanoinclusions and quantum-confined Si nanocrystals, respectively.

Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation

2005 ◽  
Author(s):  
Pavel K. Kashkarov ◽  
Olga A. Shalygina ◽  
Denis M. Zhigunov ◽  
Dmitri A. Sapun ◽  
Sergei A. Teterukov ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Light Emission ◽  
Optical Excitation ◽  
Nanocrystalline Silicon ◽  
Erbium Doped ◽  
Silicon Silicon

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

2011 ◽  
Vol 22 (37) ◽  
pp. 375204 ◽  
Author(s):  
S Darbari ◽  
M Shahmohammadi ◽  
M Mortazavi ◽  
S Mohajerzadeh ◽  
Y Abdi ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Silicon Silicon

Nano-Order Structural Analysis of White Light-Emitting Silicon Oxide Prepared by Successive Thermal Carbonization/Oxidation of the Porous Silicon

2007 ◽  
Vol 561-565 ◽  
pp. 1127-1130 ◽  
Author(s):  
Shunsuke Muto ◽  
A.V. Vasin ◽  
Yukari Ishikawa ◽  
Noriyoshi Shibata ◽  
Jarno Salonen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
White Light ◽  
Silicon Oxide ◽  
Light Emission ◽  
Strong Light ◽  
Light Emitting ◽  
Energy Filtering ◽  
Transmission Electron ◽  
Oxidation By Water ◽  
Electron Energy Loss

Recently the present authors’ group found that porous silicon showed strong and stable white/white-blue light emission after successive thermal carbonization and oxidation by water vapor. This material can be considered as a price-competitive solid-state white-light source. We examined these layers by electron energy-loss spectroscopy (EELS), energy-filtering transmission electron microscopy (EFTEM). The EEL spectra indicated that the silicon skeleton in the porous layer was completely oxidized by the thermal treatment in wet argon ambient and multi-types of carbon phases were present in the 1073 K oxidized sample of stronger emission, while carbon complexes including Si and/or O were formed in the 1223 K oxidized sample of weaker light emission. EF-TEM images showed that carbon/oxygen were more uniformly distributed in the 1223 K oxidized sample. It is assumed that the strong light-emitting properties are controlled by the size and internal chemical bonding states of carbon clusters incorporated.

Red Light Emission from Silicon Created by Self-Ion Implantation and Thermal Annealing

2013 ◽  
Vol 320 ◽  
pp. 109-113
Author(s):  
Sai Lu ◽  
Chong Wang ◽  
Wen Jie Wang ◽  
Jie Yu ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Infrared Absorption ◽  
Annealing Temperature ◽  
Silicon Oxide ◽  
Light Emission ◽  
Red Light ◽  
Silicon Substrates ◽  
Bending Vibration ◽  
Silicon Oxide Layer ◽  
Si Nanocrystals

Silicon substrates were implanted with Si ions at an energy of 60 keV to a dose of 5×1015cm-2followed by a thermal annealing at various temperatures up to 950 oC. Photoluminescence (PL) and infrared absorption (IRA) techniques have been used to characterize these samples. The PL peak positions at 2.07 eV and 1.93 eV undergo redshifts with the increasing annealing temperature. The two IRA peaks at 1080 cm-1and 800 cm-1are ascribed to the Si-O-Si asymmetric stretching and the Si-O bending vibration, respectively. The experimental results indicate that Si nanocrystals embedded in silicon oxide layer can be formed at the annealing temperature 800 oC or higher.

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