Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages

2013 ◽  
Vol 52 (4R) ◽  
pp. 040207 ◽  
Author(s):  
Chengxiao Du ◽  
Chong Geng ◽  
Haiyang Zheng ◽  
Tongbo Wei ◽  
Yu Chen ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Silicon Oxide ◽  
Light Emission ◽  
Electrical Performance ◽  
Light Emitting

Enhanced electrical performance by modulation-doping in AlGaN-based deep ultraviolet light-emitting diodes

2019 ◽  
Vol 33 (08) ◽  
pp. 1950088
Author(s):  
Sipan Yang ◽  
Miao He ◽  
Jianchang Yan ◽  
Kunhua Wen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Electrical Performance ◽  
Algan Layer ◽  
Modulation Doping ◽  
Light Emitting ◽  
Growth Method ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.

Polarized light emission from photonic crystal light-emitting diodes

2008 ◽  
Vol 92 (24) ◽  
pp. 243118 ◽  
Author(s):  
Chun-Feng Lai ◽  
Jim-Yong Chi ◽  
Hsi-Hsuan Yen ◽  
Hao-Chung Kuo ◽  
Chia-Hsin Chao ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Polarized Light ◽  
Light Emitting

Flexible Quantum Dot Light-Emitting Diodes without Sacrificing Optical and Electrical Performance

2021 ◽  
pp. 150614
Author(s):  
Sang Hyun Yoon ◽  
Seonyeong Kim ◽  
Hwi Je Woo ◽  
Jiyoon Kim ◽  
Young Woong Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Electrical Performance ◽  
Light Emitting

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Light Emission Characteristics and Mechanics of Foldable Inorganic Light-Emitting Diodes

2010 ◽  
Vol 22 (28) ◽  
pp. 3062-3066 ◽  
Author(s):  
Sang-Il Park ◽  
An-Phong Le ◽  
Jian Wu ◽  
Yonggang Huang ◽  
Xiuling Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting

scholarly journals Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes

2006 ◽  
Vol 14 (19) ◽  
pp. 8654 ◽  
Author(s):  
Hyun Kyong Cho ◽  
Junho Jang ◽  
Jeong-Hyeon Choi ◽  
Jaewan Choi ◽  
Jongwook Kim ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Emitting
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