Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation

2005 ◽  
Author(s):  
Pavel K. Kashkarov ◽  
Olga A. Shalygina ◽  
Denis M. Zhigunov ◽  
Dmitri A. Sapun ◽  
Sergei A. Teterukov ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Light Emission ◽  
Optical Excitation ◽  
Nanocrystalline Silicon ◽  
Erbium Doped ◽  
Silicon Silicon

Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Weak Coupling ◽  
Coupling Model ◽  
Nanocrystalline Silicon ◽  
Carrier Tunneling ◽  
Silicon Silicon

Structural Modifications of nc-Si/SiO2 Superlattices by Localized Photo-induced Heating

2004 ◽  
Vol 832 ◽  
Author(s):  
B. V. Kamenev ◽  
H. Grebel ◽  
L. Tsybeskov ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Dioxide ◽  
Laser Irradiation ◽  
High Intensity ◽  
Nanocrystalline Silicon ◽  
Structural Modifications ◽  
High Intensity Laser ◽  
Melting Threshold ◽  
Intensity Laser ◽  
Silicon Silicon ◽  
Pulsed Irradiation

ABSTRACTStructural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO2) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5–8 kW/cm2 for cw excitation by 514 nm line of Ar+ laser and ∼11–15 mJ/cm2 for pulsed irradiation by 248 nm, π∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%.

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

2010 ◽  
Vol 130 (1) ◽  
pp. 87-91 ◽  
Author(s):  
Andriy Romanyuk ◽  
Viktor Melnik ◽  
Yaroslav Olikh ◽  
Johannes Biskupek ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Light Emission ◽  
Nanocrystalline Silicon ◽  
Silicon Clusters

scholarly journals Emission Mechanisms of Si Nanocrystals and Defects in SiO2Materials

2014 ◽  
Vol 2014 ◽  
pp. 1-17 ◽  
Author(s):  
José Antonio Rodríguez ◽  
Marco Antonio Vásquez-Agustín ◽  
Alfredo Morales-Sánchez ◽  
Mariano Aceves-Mijares
Keyword(s):  
Silicon Dioxide ◽  
Point Defects ◽  
Silicon Content ◽  
Silicon Oxide ◽  
Light Emission ◽  
Light Emitting ◽  
Si Nanocrystals ◽  
The World ◽  
Silicon Materials ◽  
Silicon Silicon

Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2is presented.

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold

1997 ◽  
Author(s):  
Kent S. Johnson ◽  
Karl K. Berggren ◽  
Andrew J. Black ◽  
Charles T. Black ◽  
Arthur P. Chu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Silicon
Sign in / Sign up

Export Citation Format

Share Document