scholarly journals Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Dejan Nikolić ◽  
Koviljka Stanković ◽  
Ljubinko Timotijević ◽  
Zoran Rajović ◽  
Miloš Vujisić
Keyword(s):  
Comparative Analysis ◽  
Comparative Study ◽  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Radiation Effects ◽  
Optoelectronic Devices ◽  
Solar Panels ◽  
Measurement Results ◽  
Before And After ◽  
Pin Photodiodes

This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment.I-Vcharacteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

scholarly journals Photodiodes, phototransistors and solar cells behaviour in environment with gamma and neutron radiation: literature review and experiments

2019 ◽  
Vol 19 (4) ◽  
Author(s):  
Dejan Nikolić
Keyword(s):  
Solar Cells ◽  
Literature Review ◽  
Gamma Radiation ◽  
Optoelectronic Devices ◽  
Neutron Radiation ◽  
Solar Panels ◽  
Before And After ◽  
Scientific Papers ◽  
Pin Photodiodes

Due to its wide application areas, optoelectronicdevices are exposed, in their work enviroment, to different typesof radiation. Photodiodes, phototransistors and solar cells aremost common used optoelectronic devices. Therefore, a numberof experiments were performed on these devices in order toexplain their behavior in the environment with pronouncedgamma and neutron radiation. Especially when these two typesof radiation appear successively. This paper presents review ofthese researches and scientific papers based on them. A numberof PIN photodiodes, phototransistors and solar panels have beenexposed to gamma radiation, neutron radiation and, especially, totheir combination. Several types of photodiodes, phototransistorsand solar panels were used in the experiment. I-V characteristics(current dependance on voltage) and other output parametershave been measured before and after irradiation. Some unusualbehavior were observed.

scholarly journals Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Biljana Simić ◽  
Dejan Nikolić ◽  
Koviljka Stanković ◽  
Ljubinko Timotijević ◽  
Srboljub Stanković
Keyword(s):  
Room Temperature ◽  
Neutron Emission ◽  
Optoelectronic Devices ◽  
Neutron Radiation ◽  
Solar Panels ◽  
Current Voltage ◽  
Measurement Results ◽  
Before And After ◽  
Current Voltage Characteristics ◽  
Output Characteristics

This study investigates the effects of neutron radiation onI-Vcharacteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

The Effect of Different Sterilization Methods on Polypropylene Syringes

2018 ◽  
Vol 12 (2) ◽  
Author(s):  
N. Selcan Turker ◽  
A. Yekta Özer ◽  
Burak Kutlu ◽  
Rahime Nohutcu ◽  
Seyda Colak ◽  
...  
Keyword(s):  
Relative Humidity ◽  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Radiation Effects ◽  
Radiation Sterilization ◽  
Mechanical And Thermal Properties ◽  
Flow Parameters ◽  
Test Conditions ◽  
Spin Resonance ◽  
Single Use

This presents the influence of gamma irradiation on Pharmacopeia specifications, mechanical and flow parameters of polypropylene (PP) syringes. There has been significant progress in the terminal sterilization of single-use, disposable medical devices with gamma radiation sterilization due to the growing awareness of toxic residues during the ethylene oxide (EtO) sterilization. PP is a widely used polymer for the production of syringes because of its excellent mechanical and thermal properties and has expanded continuously over the last decade. Although 25 kGy was generally recommended for the gamma radiation sterilization of medical products, this radiation dose is high enough to produce substantial damage. Electron spin resonance (ESR) characteristics of irradiated syringes were also studied at normal (25 °C, 60% relative humidity) and accelerated (40 °C, 75% relative humidity) stability test conditions. It was found that the chemical and radiolytic changes and sterility assurance levels (SAL) after gamma radiation sterilization were different in PP syringes. It was shown that for two commercial syringes, E1 and E3, a SAL of 10−4 could be attained with only 10 kGy, with there being less detrimental radiation effects on E1. The differences in the radiosensitivity of the propylene syringes could be due to the different formulations and manufacturing processes. The results indicated that a commercial syringe, identified as E1 could be safely sterilized with gamma irradiation as the radicals decay over a period of days under normal conditions and quenched much faster under stability conditions. Furthermore, ESR technique could be used successfully in monitoring the radiosterilization of this material. Additionally, the confirmation and validation of the SAL doses which are below 25 kGy, will decrease the time and cost of the sterilization with less damaging effects of ionizing irradiation.

scholarly journals Thickness and gamma-ray effect on physical properties of CdO thin films grown by pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 90-100
Author(s):  
Eman M. Nasir
Keyword(s):  
Thin Films ◽  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Window Layer ◽  
Unit Surface Area ◽  
Before And After ◽  
Cdo Thin Films

Polycrystalline Cadmium Oxide (CdO) thin films were preparedusing pulsed laser deposition onto glass substrates at roomtemperature with different thicknesses of (300, 350 and 400)nm,these films were irradiated with cesium-137(Cs-137) radiation. Thethickness and irradiation effects on structural and optical propertieswere studied. It is observed by XRD results that films arepolycrystalline before and after irradiation, with cubic structure andshow preferential growth along (111) and (200) directions. Thecrystallite sizes increases with increasing of thickness, and decreaseswith gamma radiation, which are found to be within the range(23.84-4.52) nm and (41.44-4.974)nm before and after irradiation forthickness 350nm and 400nm respectively, The dislocation density,microstrain and number of crystallites per unit surface area,decreases with increasing of thickness, while they increases withgamma radiation. From the atomic force microscope (AFM), thegrain size of CdO films decrease from 96.69nm before radiation to89.49 nm after gamma radiation and RMS roughness increases forthe irradiated sample from 4.26nm to 4.8nm, increase in the surfaceroughness is advantages as it increases the efficiency of the CdOsolar cells. The optical properties for thin CdOfilms with differentthickness before and after gamma irradiation have been determinedand reveals direct energy gap. It is decrease with the increase ofthickness, while it is increase after gamma irradiation. These films apromising candidate for the window layer in solar cells and otherpossible optoelectronic application.

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1512-1516 ◽  
Author(s):  
B. Tala-Ighil ◽  
J.-L. Trolet ◽  
H. Gualous ◽  
P. Mary ◽  
S. Lefebvre
Keyword(s):  
Comparative Study ◽  
Gamma Radiation ◽  
Radiation Effects

scholarly journals Comparative Study of γ- and e-Radiation-Induced Effects on FBGs Using Different Femtosecond Laser Inscription Methods

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8379
Author(s):  
Antreas Theodosiou ◽  
Arnaldo Leal-Junior ◽  
Carlos Marques ◽  
Anselmo Frizera ◽  
Antonio J. S. Fernandes ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Comparative Study ◽  
Ftir Spectroscopy ◽  
Radiation Effects ◽  
Single Mode ◽  
Electron Radiation ◽  
Temperature Coefficients ◽  
Before And After ◽  
Radiation Induced ◽  
Fibre Bragg Gratings

This work presents an extensive, comparative study of the gamma and electron radiation effects on the behaviour of femtosecond laser-inscribed fibre Bragg gratings (FBGs) using the point-by-point and plane-by-plane inscription methods. The FBGs were inscribed in standard telecommunication single mode silica fibre (SMF28) and exposed to a total accumulated radiation dose of 15 kGy for both gamma and electron radiation. The gratings’ spectra were measured and analysed before and after the exposure to radiation, with complementary material characterisation using Fourier transform infrared (FTIR) spectroscopy. Changes in the response of the FBGs’ temperature coefficients were analysed on exposure to the different types of radiation, and we consider which of the two inscription methods result in gratings that are more robust in such harsh environments. Moreover, we used the FTIR spectroscopy to locate which chemical bonds are responsible for the changes on temperature coefficients and which are related with the optical characteristics of the FBGs.

Fourier transform infrared spectroscopic study of gamma irradiated SiO2 nanoparticles

2018 ◽  
Vol 32 (07) ◽  
pp. 1850074 ◽  
Author(s):  
Elchin Huseynov ◽  
Adil Garibov ◽  
Ravan Mehdiyeva ◽  
Efsane Huseynova
Keyword(s):  
Fourier Transform ◽  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Fourier Transform Infrared ◽  
Sio2 Nanoparticles ◽  
Infrared Spectroscopic Study ◽  
Bending Vibration ◽  
Before And After ◽  
Stretching Vibration ◽  
Gamma Irradiated

In the present work, nano SiO2 particles are investigated before and after gamma irradiation (25, 50, 75, 100 and 200 kGy) using Fourier transform infrared (FTIR) spectroscopy method for the wavenumber between 400–4000 cm[Formula: see text]. It is found that as a result of spectroscopic analysis, five new peaks have appeared after gamma radiation. Two of new obtained peaks (which are located at 687 cm[Formula: see text] and 2357 cm[Formula: see text] of wavenumber) were formed as a result of gamma radiation interaction with Si–O bonds. Another three new peaks (peaks appropriate to 941, 2052 and 2357 cm[Formula: see text] values of wavenumber) appear as a result of interaction of water with nano SiO2 particles after gamma irradiation. It has been defined as asymmetrical bending vibration, symmetrical bending vibration, symmetrical stretching vibration and asymmetrical stretching vibration of Si–O bonds appropriate to peaks.

Sign in / Sign up

Export Citation Format

Share Document