Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1512-1516 ◽  
Author(s):  
B. Tala-Ighil ◽  
J.-L. Trolet ◽  
H. Gualous ◽  
P. Mary ◽  
S. Lefebvre
2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Dejan Nikolić ◽  
Koviljka Stanković ◽  
Ljubinko Timotijević ◽  
Zoran Rajović ◽  
Miloš Vujisić

This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment.I-Vcharacteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.


2020 ◽  
Vol 75 (5) ◽  
pp. 507-511
Author(s):  
Y. El-Ouardi ◽  
A. Dadouch ◽  
A. Aknouch ◽  
M. Mouhib ◽  
A. Maghnouj ◽  
...  

2012 ◽  
Vol 60 (12) ◽  
pp. 3693-3698 ◽  
Author(s):  
Jincan Zhang ◽  
Yuming Zhang ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
Min Liu

1991 ◽  
Vol 178 (1-3) ◽  
pp. 11-14 ◽  
Author(s):  
L. Luo ◽  
Y.H. Zhang ◽  
S.H. Hu ◽  
W.H. Liu ◽  
G.L. Zhang ◽  
...  

2014 ◽  
Vol 95 ◽  
pp. 385-388 ◽  
Author(s):  
E.S. Ferreira ◽  
K.A. Gonçalves ◽  
J. Mitani ◽  
M. Yee ◽  
S.H. Tatumi

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.


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