scholarly journals Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Biljana Simić ◽  
Dejan Nikolić ◽  
Koviljka Stanković ◽  
Ljubinko Timotijević ◽  
Srboljub Stanković
Keyword(s):  
Room Temperature ◽  
Neutron Emission ◽  
Optoelectronic Devices ◽  
Neutron Radiation ◽  
Solar Panels ◽  
Current Voltage ◽  
Measurement Results ◽  
Before And After ◽  
Current Voltage Characteristics ◽  
Output Characteristics

This study investigates the effects of neutron radiation onI-Vcharacteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

scholarly journals Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Dejan Nikolić ◽  
Koviljka Stanković ◽  
Ljubinko Timotijević ◽  
Zoran Rajović ◽  
Miloš Vujisić
Keyword(s):  
Comparative Analysis ◽  
Comparative Study ◽  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Radiation Effects ◽  
Optoelectronic Devices ◽  
Solar Panels ◽  
Measurement Results ◽  
Before And After ◽  
Pin Photodiodes

This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment.I-Vcharacteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

scholarly journals Photodiodes, phototransistors and solar cells behaviour in environment with gamma and neutron radiation: literature review and experiments

2019 ◽  
Vol 19 (4) ◽  
Author(s):  
Dejan Nikolić
Keyword(s):  
Solar Cells ◽  
Literature Review ◽  
Gamma Radiation ◽  
Optoelectronic Devices ◽  
Neutron Radiation ◽  
Solar Panels ◽  
Before And After ◽  
Scientific Papers ◽  
Pin Photodiodes

Due to its wide application areas, optoelectronicdevices are exposed, in their work enviroment, to different typesof radiation. Photodiodes, phototransistors and solar cells aremost common used optoelectronic devices. Therefore, a numberof experiments were performed on these devices in order toexplain their behavior in the environment with pronouncedgamma and neutron radiation. Especially when these two typesof radiation appear successively. This paper presents review ofthese researches and scientific papers based on them. A numberof PIN photodiodes, phototransistors and solar panels have beenexposed to gamma radiation, neutron radiation and, especially, totheir combination. Several types of photodiodes, phototransistorsand solar panels were used in the experiment. I-V characteristics(current dependance on voltage) and other output parametershave been measured before and after irradiation. Some unusualbehavior were observed.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Self-assembled rigid conjugated polymer nanojunction and its nonlinear current–voltage characteristics at room temperature

2004 ◽  
Vol 85 (1) ◽  
pp. 115-117 ◽  
Author(s):  
Wenping Hu ◽  
Hiroshi Nakashima ◽  
Kazuaki Furukawa ◽  
Yoshiaki Kashimura ◽  
Katsuhiro Ajito ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Room Temperature ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Self Assembled

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

2004 ◽  
Vol 813 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Narrow Gap ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Before And After ◽  
First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Flat Band ◽  
Interface Reactions ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.

Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology.

2002 ◽  
Vol 744 ◽  
Author(s):  
Galina Khlyap ◽  
Victor Brytan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Continuous Mode ◽  
Applied Bias ◽  
Near Ir ◽  
Current Voltage ◽  
Exponential Character ◽  
Current Voltage Characteristics ◽  
Amorphous Si ◽  
Spectral Ranges

ABSTRACTElectric field – induced effects are studied in thin films of amorphous Si grown by magnetron sputtering performed in continuous and pulse modes. Current-voltage characteristics are measured under the room temperature in different spectral ranges. It is shown that the investigated dependencies are of exponential character in all range of applied bias. Good photosensitivity was revealed by the samples prepared in continuous mode in the near-IR and visible interval. The samples grown by the pulse magnetron technology were shown room-temperature photosensitivity in near-IR range after 2000C hydrogenation.

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