scholarly journals Nonstoichiometry inTiO2−yStudied by Ion Beam Methods and Photoelectron Spectroscopy

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
K. Zakrzewska
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Photoelectron Spectroscopy ◽  
Critical Review ◽  
Defect Structure ◽  
Ion Beam ◽  
Experimental Methods ◽  
Nuclear Reaction Analysis ◽  
X Ray ◽  
Deviation From Stoichiometry

This paper treats a problem of nonstoichiometry inTiO2−ythin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometryyin the bulk and at the surface ofTiO2−ylayers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutileTiO2is discussed.

X-ray Photoelectron Spectroscopy Study of Diamond-Like Carbon Thin Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition

2008 ◽  
Vol 47 (5) ◽  
pp. 3380-3383 ◽  
Author(s):  
Yuichi Haruyama ◽  
Teruyuki Kitagawa ◽  
Kazuhiro Kanda ◽  
Shinji Matsui ◽  
Tatsuo Gejo ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion ◽  
Carbon Thin Films ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

Structural, Morphological and Mechanical Characterisation of Molybdenum Nitride Thin Films Deposited by a Plasma Focus Device

2017 ◽  
Vol 41 (12) ◽  
pp. 699-704
Author(s):  
Mohammad Taghi Hosseinnejad ◽  
Mehdi Ettehadi-Abari ◽  
Naser Panahi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Plasma Focus ◽  
Photoelectron Spectroscopy ◽  
Plasma Focus Device ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Root Mean Square Roughness ◽  
Molybdenum Nitride ◽  
X Ray

This research focuses on the characterisation of nanostructured molybdenum nitride (MoN) thin films deposited on glass substrates at room temperature using a low-energy (1.1 kJ) plasma focus device. The nanostructure, surface morphology, electrical resistivity and mechanical properties of MoN thin films were studied in terms of the number of shots required to prepare them. X-ray diffraction (XRD) analysis indicated that all of the deposited layers were polycrystalline in nature, possessing the γ-Mo2N (fcc) structure. The XRD results also revealed that the degree of crystallinity and residual stress of the thin films were strongly dependent on the number of shots. X-ray photoelectron spectroscopy showed the Mo 3d3/2, Mo 3d5/2, Mo 3p3/2 and N 1s peaks for all of the thin films, confirming the formation of the γ-Mo2N structure. Scanning electron microscopy images showed the growth of granular structures and then the formation of larger-sized agglomerates on the surfaces of the samples with increasing numbers of shots. Atomic force microscopy indicated that grain sizes on surface layers as well as the average and root mean square roughness increased for samples deposited with more shots. Furthermore, the variations in hardness and electrical resistivity of the deposited MoN thin films were qualitatively explained on the basis of the morphological properties of the samples.

Effect of low-energy N2+ ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

2002 ◽  
Vol 91 (6) ◽  
pp. 3626-3631
Author(s):  
M. Garcı́a ◽  
I. Montero ◽  
J. M. Ripalda ◽  
L. Galán
Keyword(s):  
Thin Films ◽  
Silicate Glass ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Low Energy ◽  
X Ray

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

‘In-situ’ Solution Processed Room Temperature Ferromagnetic MgO Thin Films Printed by Inkjet Technique

2011 ◽  
Vol 1292 ◽  
Author(s):  
Yan Wu ◽  
Yiqiang Zhan ◽  
Mats Fahlman ◽  
Mei Fang ◽  
K. V. Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Solution Processed ◽  
X Ray ◽  
Si Substrates ◽  
Ph Values

ABSTRACTWe report on ‘in-situ’ solution processed homogeneous (200) oriented MgO ~85nm thin films deposited on Si substrates by inkjet printing. These films are found to show ferromagnetic order beyond room temperature with a saturation magnetization MS as high as ~0.63 emu/g. X-ray photoelectron spectroscopy investigations show the absence of any possible contamination effects, while the Mg 2p, and O 1s spectra indicate that the role of defect structure at the Mg site is important in the observed magnetism. By controlling the pH values of the precursors the concentration of the defects can be varied and hence tune the magnetization at room temperature. The origin of magnetism in these MgO thin films appears to arise from the cation vacancies.

Investigation of the interface reactions of Ti thin films with AlN substrate

1997 ◽  
Vol 12 (3) ◽  
pp. 846-851 ◽  
Author(s):  
Xiangjun He ◽  
Si-Ze Yang ◽  
Kun Tao ◽  
Yudian Fan
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Transmission Electron ◽  
Argon Ion Bombardment

Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.

Oxygen Vacancy of RE0.5Sr0.5CoO3-δ Thin Films

2012 ◽  
Vol 512-515 ◽  
pp. 1668-1671
Author(s):  
Tie Zhu Ding ◽  
Cheng Jun Zhu ◽  
Yan Li Qin ◽  
Yan Lai Wang ◽  
Luo Meng Chao
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Heat Treating ◽  
Nominal Composition ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Average Grain Size

Thin films of RE0.5Sr0.5CoO3-δ (RE=La, Pr, Nd) nominal composition were grown on yttria-stabilized zirconia (YSZ) single crystal substrates by ion-beam sputtering deposition method. The X-ray diffraction spectra and X-ray photoelectron spectroscopy were measured for RE0.5Sr0.5CoO3-δ thin films with perovskite structure. The experimental results indicate that the average grain size of RE0.5Sr0.5CoO3-δ thin films ranges from 86 to 165 nm，and the film obtained by heat-treating at 750 °C is highly oriented . The RE0.5Sr0.5CoO3-δ thin films being mixed-valent systems contains Co3+ and Co4+ ions. There is oxygen vacancy at an interface region for RE0.5Sr0.5CoO3-δ thin films.

Ion Beam Sputtering and Properties of Superconducting YBaCuO thin Films

1987 ◽  
Vol 99 ◽  
Author(s):  
D. Pavona ◽  
H. Baer ◽  
H. Berger ◽  
V. GasParov ◽  
M. Schmidt ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Thermal Treatments ◽  
Spectroscopy Data ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Single Target ◽  
Beam Sputtering

ABSTRACTWe describe single-target ion beam sputtering of superconducting YBaCuO thin films mainly onto R-sapphire and (100) SrTiO3 substrates. We discuss different thermal treatments and consequent X-ray and resistivity results and conclude with X-ray photoelectron spectroscopy data which indicate formation of hydroxydes on the surface of films exposed to atmosphere.

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