Effect of low-energy N2+ ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

2002 ◽  
Vol 91 (6) ◽  
pp. 3626-3631
Author(s):  
M. Garcı́a ◽  
I. Montero ◽  
J. M. Ripalda ◽  
L. Galán
Keyword(s):  
Thin Films ◽  
Silicate Glass ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Low Energy ◽  
X Ray

Effects of Irradiation by Low Energy Nitrogen Ions on Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yuka Nasu ◽  
Masami Aono ◽  
Shinichiro Aizawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Low Energy ◽  
Carbon Filament ◽  
X Ray ◽  
Nitrogen Ions

ABSTRACTCarbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.

X-ray Photoelectron Spectroscopy Study of Diamond-Like Carbon Thin Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition

2008 ◽  
Vol 47 (5) ◽  
pp. 3380-3383 ◽  
Author(s):  
Yuichi Haruyama ◽  
Teruyuki Kitagawa ◽  
Kazuhiro Kanda ◽  
Shinji Matsui ◽  
Tatsuo Gejo ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion ◽  
Carbon Thin Films ◽  
Gas Cluster Ion Beam ◽  
Ar Gas

scholarly journals Nonstoichiometry inTiO2−yStudied by Ion Beam Methods and Photoelectron Spectroscopy

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
K. Zakrzewska
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Photoelectron Spectroscopy ◽  
Critical Review ◽  
Defect Structure ◽  
Ion Beam ◽  
Experimental Methods ◽  
Nuclear Reaction Analysis ◽  
X Ray ◽  
Deviation From Stoichiometry

This paper treats a problem of nonstoichiometry inTiO2−ythin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometryyin the bulk and at the surface ofTiO2−ylayers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutileTiO2is discussed.

Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMR

2015 ◽  
Vol 48 (16) ◽  
pp. 164002 ◽  
Author(s):  
Roman Fetzer ◽  
Siham Ouardi ◽  
Yusuke Honda ◽  
Hong-xi Liu ◽  
Stanislav Chadov ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
X Ray

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

Investigation of the interface reactions of Ti thin films with AlN substrate

1997 ◽  
Vol 12 (3) ◽  
pp. 846-851 ◽  
Author(s):  
Xiangjun He ◽  
Si-Ze Yang ◽  
Kun Tao ◽  
Yudian Fan
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Transmission Electron ◽  
Argon Ion Bombardment

Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.

Oxygen Vacancy of RE0.5Sr0.5CoO3-δ Thin Films

2012 ◽  
Vol 512-515 ◽  
pp. 1668-1671
Author(s):  
Tie Zhu Ding ◽  
Cheng Jun Zhu ◽  
Yan Li Qin ◽  
Yan Lai Wang ◽  
Luo Meng Chao
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Heat Treating ◽  
Nominal Composition ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Average Grain Size

Thin films of RE0.5Sr0.5CoO3-δ (RE=La, Pr, Nd) nominal composition were grown on yttria-stabilized zirconia (YSZ) single crystal substrates by ion-beam sputtering deposition method. The X-ray diffraction spectra and X-ray photoelectron spectroscopy were measured for RE0.5Sr0.5CoO3-δ thin films with perovskite structure. The experimental results indicate that the average grain size of RE0.5Sr0.5CoO3-δ thin films ranges from 86 to 165 nm，and the film obtained by heat-treating at 750 °C is highly oriented . The RE0.5Sr0.5CoO3-δ thin films being mixed-valent systems contains Co3+ and Co4+ ions. There is oxygen vacancy at an interface region for RE0.5Sr0.5CoO3-δ thin films.

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