Ion Beam Sputtering and Properties of Superconducting YBaCuO thin Films

1987 ◽  
Vol 99 ◽  
Author(s):  
D. Pavona ◽  
H. Baer ◽  
H. Berger ◽  
V. GasParov ◽  
M. Schmidt ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Thermal Treatments ◽  
Spectroscopy Data ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Single Target ◽  
Beam Sputtering

ABSTRACTWe describe single-target ion beam sputtering of superconducting YBaCuO thin films mainly onto R-sapphire and (100) SrTiO3 substrates. We discuss different thermal treatments and consequent X-ray and resistivity results and conclude with X-ray photoelectron spectroscopy data which indicate formation of hydroxydes on the surface of films exposed to atmosphere.

Adhesion of Copper to Polytetrafluoroethylene

1989 ◽  
Vol 153 ◽  
Author(s):  
Yong-Kil Kim ◽  
Chin-An Chang ◽  
A.G. Schrott ◽  
J. Andreshak ◽  
M. Cali
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Peel Test ◽  
Peel Strength ◽  
Interface Morphology ◽  
Ion Beam Sputtering ◽  
Polymer Substrates ◽  
X Ray ◽  
Beam Sputtering ◽  
Scanning Electron

AbstractAn enhancement of the adhesion between copper and polytetrafluoroethylene (PTFE) has been studied. Thin-films of copper were electron-beam deposited on the surface of the polymer substrates. Peel test measurements showed that, without any treatment of the substrates, the adhesion was poor with a peel strength of 1-2 g/mm. A pronounced enhancement of the adhesion has been obtained when the fluorocarbon substrates were treated by either an ultraviolet (UV) irradiation, an ion-beam presputtering prior to the metal deposition, or heat treatments after the deposition. Among the treatments employed, the ion-beam sputtering was the most effective in improving the adhesion. The roles of the treatments and possible reasons for the enhanced adhesion are discussed in conjunction with the studies of interface morphology and chemistry using Scanning Electron Microscopy, Rutherford Backscattering Spectroscopy, and X-ray Photoelectron Spectroscopy.

Adhesion of Copper to Polytetrafluoroethylene

1989 ◽  
Vol 154 ◽  
Author(s):  
Yong-Kil Kim ◽  
Chin-An Chang ◽  
A. G. Schrott ◽  
J. Andreshak ◽  
M. Cali
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Peel Test ◽  
Peel Strength ◽  
Interface Morphology ◽  
Ion Beam Sputtering ◽  
Polymer Substrates ◽  
X Ray ◽  
Beam Sputtering ◽  
Scanning Electron

AbstractAn enhancement of the adhesion between copper and polytetrafluoroethylene (PTFE) has been studied. Thin-films of copper were electron-beam deposited on the surface of the polymer substrates. Peel test measurements showed that, without any treatment of the substrates, the adhesion was poor with a peel strength of 1–2 g/mm. A pronounced enhancement of the adhesion has been obtained when the fluorocarbon substrates were treated by either an ultraviolet (UV) irradiation, an ion-beam presputtering prior to the metal deposition, or heat treatments after the deposition. Among the treatments employed, the ion-beam sputtering was the most effective in improving the adhesion. The roles of the treatments and possible reasons for the enhanced adhesion are discussed in conjunction with the studies of interface morphology and chemistry using Scanning Electron Microscopy, Rutherford Backscattering Spectroscopy, and X-ray Photoelectron Spectroscopy.

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 713-716 ◽  
Author(s):  
Yu Cao ◽  
S. Alfonso Pérez-García ◽  
Lars Nyborg
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Beam Sputtering ◽  
Sic Wafer

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

2013 ◽  
Vol 734-737 ◽  
pp. 2545-2548
Author(s):  
Chao Ming Chen ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hall Effect Measurement ◽  
Beam Current ◽  
Chalcopyrite Structure ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Beam Sputtering ◽  
Beam Currents

This study reports the successful preparation of Cu (In, Ga)Se2(CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ1018cm-3and mobility of 2.73cm2V-1s-1. The resulting film exhibited p-type conductivity.

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

2007 ◽  
Vol 336-338 ◽  
pp. 1788-1790
Author(s):  
Yu Ju Chen ◽  
Wen Cheng J. Wei
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Crystal Growth Process ◽  
Transmission Electron ◽  
Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

Oxygen Vacancy of RE0.5Sr0.5CoO3-δ Thin Films

2012 ◽  
Vol 512-515 ◽  
pp. 1668-1671
Author(s):  
Tie Zhu Ding ◽  
Cheng Jun Zhu ◽  
Yan Li Qin ◽  
Yan Lai Wang ◽  
Luo Meng Chao
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Heat Treating ◽  
Nominal Composition ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Average Grain Size

Thin films of RE0.5Sr0.5CoO3-δ (RE=La, Pr, Nd) nominal composition were grown on yttria-stabilized zirconia (YSZ) single crystal substrates by ion-beam sputtering deposition method. The X-ray diffraction spectra and X-ray photoelectron spectroscopy were measured for RE0.5Sr0.5CoO3-δ thin films with perovskite structure. The experimental results indicate that the average grain size of RE0.5Sr0.5CoO3-δ thin films ranges from 86 to 165 nm，and the film obtained by heat-treating at 750 °C is highly oriented . The RE0.5Sr0.5CoO3-δ thin films being mixed-valent systems contains Co3+ and Co4+ ions. There is oxygen vacancy at an interface region for RE0.5Sr0.5CoO3-δ thin films.

scholarly journals Micro-structural and bonding structure analysis of TiAlN thin films deposited with varying N2 flow rate via ion beam sputtering technique

2020 ◽  
Vol 38 (1) ◽  
pp. 122-131
Author(s):  
Soham Das ◽  
Mukul Gupta ◽  
Ashis Sharma ◽  
Bibhu P. Swain
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Flow Rate ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Ion Beam Sputtering ◽  
Sem Images ◽  
Edge Structure ◽  
X Ray ◽  
Beam Sputtering

AbstractTitanium aluminum nitride (TiAlN) thin films were deposited on Si(1 0 0 ) substrate using titanium and aluminum targets in 1:1 ratio at various N2 flow rates using ion beam sputtering (IBS) technique. The morphology, particle and crystallite size of TiAlN thin films were estimated by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and grazing incidence X-ray diffraction (GIXRD) technique, respectively. The SEM images of the TiAlN thin films revealed smooth and uniform coating, whereas AFM images confirmed the particle size varying from 2.5 nm to 8.8 nm, respectively. The crystallite size and lattice strain were observed to vary from 4.79 nm to 5.5 nm and 0.0916 and 0.0844, respectively, with an increase in N2 flow rate in the TiAlN thin films. The X-ray absorption near edge structure (XANES) results showed Ti L, N K and O K-edges of TiAlN coating within a range of 450 eV to 470 eV, 395 eV to 410 eV and 480 eV to 580 eV photon energy, respectively. The electronic structure and chemical bonding of state of c-TiAlN thin film of Ti L, N K and O K-edges were analyzed through semi-empirical curve fitting technique.

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