scholarly journals Local Fatigue Evaluation in PZT Thin Films with Nanoparticles by Piezoresponse Force Microscopy

2012 ◽  
Vol 2012 ◽  
pp. 1-9
Author(s):  
B. S. Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Grain Morphology ◽  
Piezoresponse Force Microscopy ◽  
Lead Zirconate ◽  
Fatigue Performance ◽  
Pzt Thin Films

Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarization behavior during fatigue in PZT films with and without nanoparticles by using very recent developed scanning piezoelectric microscopy (SPM). We show that the local fatigue performance, which is characterized by variations of local piezoloop with electric cycles, is significantly improved by adding some nanoseeds. It has been verified by scanning electron microscope (SEM) that the film grain morphology changes from columnar to granular structure with the addition of the nanoseeds. On the other hand, the existence of PtxPb transition phase, which existed in interface at early crystallization stage of pure PZT thin film, deteriorates the property of the interface. These microstructures and the interfaces of these films significantly affect the electrons injection occurred on the interfaces. The domain wall pinning induced by injected electrons and the succeeding penetration into the films is discussed to explain the fatigue performance.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

The Role of Processing Parameters in Variation of Microstruture of Sol-Gel Derived Lead Zirconate Titanate Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Chang Jung Kim ◽  
Tae-Young Kim ◽  
Ilsub Chung ◽  
In Kyung Yoo
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Secondary Phase ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Test System ◽  
Pzt Thin Films ◽  
Force Microscopy

AbstractThe PZT thin films were fabricated to investigate the effect of sol-gel processing parameters on the physical and the electrical properties. The films were made with different amount of excess Pb precursors and drying temperatures, and then annealed in various ambients. The physical properties of the films such as crystallinity and microstructure were evaluated using x-ray diffraction, scanning electron microscopy and atomic force microscopy. The ferroelectric properties and current density characteristics of the films were investigated using a standarized feiroelectric test system and pA meter, respectively. It is found that the drying temperature was playing a key role in the formation of the secondary phase on the PZT thin films. In addition, it turned out that the use of nitrogen as an annealing ambient promoted overall ferroelectric properties, when compared to oxygen ambients.

Effect of Pb Excess Content on Microstructure and Electrical Properties of Sol Gel Derived PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhan-jie Wang ◽  
Ryutaro Maeda ◽  
Kaoru Kikuchi
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Starting Solution ◽  
Pzt Films

AbstractLead zirconate titanate (PZT) thin films were fabricated by a three-step heat-treatment process which involves the addition of -10, 0 and 10 mol% excess Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron probe microanalysis (EPMA), respectively. The well-crystallized perovskite phase and the (100) preferred orientation were obtained by adding 10% excess Pb to the starting solution. It was found that PZT films to which 10% excess Pb was added had better electric properties. The remanent polarization and the coercive field of this film were 34.8 μC/cm2 and 41.7 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1600 and 0.04, respectively. Dielectric and ferroelectric properties were correlated to the microstructure of the films.

Reactive ion etching of sol-gel deposited lead zirconate titanate (pzt) thin films in sf6 plasmas

2001 ◽  
Vol 37 (1-4) ◽  
pp. 67-74 ◽  
Author(s):  
George McLane ◽  
Ronald Polcawich ◽  
Jeffrey Pulskamp ◽  
Brett Piekarski ◽  
Madan Dubey ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Lead Zirconate ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Zirconate Titanate

Synthesis and studies of local of ferroelectric properties of lead zirconate titanate thin films obtained by sol-gel technique

2013 ◽  
Vol 4 (5) ◽  
pp. 400-404 ◽  
Author(s):  
D. A. Kiselev ◽  
M. V. Silibin ◽  
A. A. Dronov ◽  
S. A. Gavrilov ◽  
V. M. Roshchin ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Gel Technique

Properties of Pzt Thin Films with 2CdO·B2O3 Glass Phase Additive

1991 ◽  
Vol 243 ◽  
Author(s):  
Keith G. Brooks ◽  
Jiayu Chen ◽  
K. R. Udayakumar ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Spin Coating ◽  
Glass Phase ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Coating Process ◽  
Pzt Thin Films ◽  
Gel Processing ◽  
Hysteresis Properties

AbstractLead zirconate titanate thin films containing 0-4 wt.% of 2CdO·B2O3 glass phase additive have been fabricated by sol-gel processing. Smooth dense perovskite films of approximately 3500Å thickness were formed on Si wafers by a multiple layer spin coating process followed by rapid thermal annealing. Remanent polarizations of up to 23μC/cm2 were measured. Hysteresis properties were found to be very sensitive to annealing time at 700°C, with remanence being maximized at 100-200 seconds.

Microstructural development and electrical properties of sol-gel prepared lead zirconate-titanate thin films

1991 ◽  
Vol 6 (10) ◽  
pp. 2208-2217 ◽  
Author(s):  
Cheng-Chen Hsueh ◽  
Martha L. Mecartney
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Nucleation And Growth ◽  
Dielectric Constants ◽  
Microstructural Development ◽  
Pzt Films

A systematic investigation of the microstructural evolution of fast fired, sol-gel derived Pb(Zr, Ti)O3 films (Zr/Ti = 54/46) was performed by analytical transmission electron microscopy (TEM). It was found that the nucleation and growth of the sol-gel PZT films were influenced by the precursor chemistry. The precursor solution was composed of Pb 2-ethylhexanoate, Ti isopropoxide, and Zr n-propoxide in n-propanol. Porous and spherulitic perovskite grains nucleated and grew from a pyrochlore matrix for NH4OH-modified films, but no chemical segregation was found. These thin films consisted completely of porous spherulitic PZT grains (∼2 μm) when the firing temperature was increased. Chemical phase separation with regions of Zr-rich pyrochlore particles separated by Zr-deficient perovskite grains was observed in the initial stages of nucleation and growth for CH3COOH-modified PZT films. This phase separation is attributed to the effect of acetate ligands on the modification of molecular structure of the PZT precursor. Firing the acid-modified films at higher temperatures for long times resulted in porous perovskite grain structures. The residual porosity in these films is suggested to be a result of differential evaporation/condensation rates during the deposition process and the gas evolution at high temperatures due to trapped organics in the films. Dielectric and ferroelectric properties were correlated to the microstructure of the films. Lower dielectric constants (∼500) and higher coercive fields (∼65 kV/cm) were found for the acid-modified PZT films with phase separation in comparison to those measured from the sol-gel films with a uniform microstructure (∽ > 600, Ec < 50 kV/cm). All films fired at 650 °C showed relatively good remanent polarization on the order of 20 μC/cm2.

Preparation And Characterization Of Pzt Thin Films On Ruox/Pt Multilayered Electrode By Mocvd

1996 ◽  
Vol 446 ◽  
Author(s):  
Tae‐Young Kim ◽  
Daesig Km ◽  
Chee Won Chung ◽  
June Key Lee ◽  
Inyong Song
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Inductively Coupled Plasma ◽  
Ferroelectric Properties ◽  
Strong Dependence ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Organic Chemical ◽  
Substrate Thickness ◽  
Pzt Thin Films

AbstractFerroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 1010 cycles without any serious degradation. The ferroelectric capacitors on 4” wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc=0.57V, ργ=22μC/cm2 respectively).

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