scholarly journals On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Bogdan Bita ◽  
Sorin Vizireanu ◽  
Daniel Stoica ◽  
Valentin Ion ◽  
Sasa Yehia ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Carbon Nanowalls ◽  
P Type ◽  
Top View

In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N2) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D′-band, 2D-band, and D+G-band. The average values of the electrical resistance of fabricated samples were evaluated by current-voltage characteristics acquired at room temperature, in the ranges of 0 V–0.2 V, and an increase was noticed with about 50% after the Ar/N2 postsynthesis plasma treatment compared to pristine samples. Moreover, the Hall measurements proved that the obtained CNW structures had p-type conductivity (Hall coefficient was 0.206 m3/C), and the concentration of charge carriers was 7.8×1019 cm-3, at room temperature.

Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

1994 ◽  
Vol 336 ◽  
Author(s):  
Kyung Ha Lee ◽  
Byeong Yeon Moon ◽  
Yoo Chan Chung ◽  
Seung Min Lee ◽  
Sung Chul Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Hydrogen Incorporation ◽  
Ion Doping ◽  
Pressure Chemical ◽  
Si Films ◽  
P Type

ABSTRACTWe have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) Amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10−2 and > 10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-S.i.H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

1994 ◽  
Vol 345 ◽  
Author(s):  
Kyung Ha Lee ◽  
Byeong Yeon Moon ◽  
Yoo Chan Chung ◽  
Seung Min Lee ◽  
Sung Chul Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Plasma Enhanced Cvd ◽  
Ion Doping ◽  
Si Films ◽  
P Type

AbstractWe have studied the effect of ion doping on the electrical properties for atmospheric pressute chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimurr doping tenperatures for n− and p-type a-Si films were found to be > 10−2 and >10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices

2019 ◽  
Vol 125 ◽  
pp. 310-314
Author(s):  
Zili Wu ◽  
Xiong Zhang ◽  
Jianguo Zhao ◽  
Aijie Fan ◽  
Hu Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
P Type

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

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