scholarly journals Low Dark Current Mesa-Type AlGaN Flame Detectors

2007 ◽  
Vol 2007 ◽  
pp. 1-3
Author(s):  
Lung-Chien Chen
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
Reverse Bias ◽  
Fabrication Process ◽  
Rejection Ratio ◽  
Superlattice Structure ◽  
Large Rejection

This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with anAl0.1Ga0.9N/GaNsuperlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10A at bias of−5V) and large rejection ratio of photocurrent (∼2.14×10−5A at bias of-5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of-5 V was 0.194 A/W. Quantum efficiency,η, was 0.687 at a reverse bias of 5 V.

scholarly journals Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1683
Author(s):  
Hongqiang Li ◽  
Sai Zhang ◽  
Zhen Zhang ◽  
Shasha Zuo ◽  
Shanshan Zhang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
Reverse Bias ◽  
Spectral Response ◽  
Incident Light ◽  
Absorption Efficiency ◽  
Silicon On Insulator ◽  
Reverse Bias Voltage ◽  
Device Structure ◽  
Simulation And Optimization

We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators.

Dark Current Leakage in Optoelectronic Hermetic Packages

2017 ◽  
Vol 2017 (1) ◽  
pp. 000669-000674
Author(s):  
Clara Dionet ◽  
Goran Perosevic ◽  
Jeff Javier ◽  
Sammie Fernandez ◽  
Taylor Hurdle ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Dark Current ◽  
Optoelectronic Devices ◽  
Extended Period ◽  
Fabrication Process ◽  
Current Leakage ◽  
Root Cause ◽  
Over Time ◽  
Polyimide Layer

Abstract In this work, the root cause of the increase in dark current occurring over time at high temperature in hermetic packages, such as those used in optoelectronic devices, was investigated. It was observed that hermetic Receiver Optical Subassembly (ROSA) devices show continuously increasing dark current when stressed and monitored at 85°C over an extended period of time, reaching, in some cases, values greater than 500nA. However, this increase in leakage current was recoverable once the package seal is broken, and this behavior was found to be very repeatable. Photodetectors from two different suppliers were tested and found to have dark current which is dependent on the fabrication process, as the photodetector (PD) from supplier 1 (PD1) showed three times higher leakage than the photodetector from supplier 2 (PD2). The main difference between the two photodetectors is that the polyimide layer in PD1 in significantly greater than in PD2. It was also observed that 48 hour pre-seal baking at 120°C keeps the dark current constant at much lower levels, but does not stop it completely from rising over time.

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

A High Performance UV Photodetector from Thin Film Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Dark Current ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Deep Uv

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

unneling effects in InAs/GaInSb superlattice infrared photodiodes

1997 ◽  
Vol 484 ◽  
Author(s):  
U. Weimar ◽  
F. Fuchs ◽  
E. Ahlswede ◽  
J. Schmitz ◽  
W. Pletschen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetic Fields ◽  
Electric Field ◽  
Dark Current ◽  
Reverse Bias ◽  
Cutoff Wavelength ◽  
Optical And Electrical Properties ◽  
Interband Tunneling ◽  
Infrared Photodiodes ◽  
Device Properties

AbstractThe optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.

Fast Degradation with Pulsed Light of a-Si:H P-I-N Photodiodes

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Puigdollers ◽  
J. Bertomeu ◽  
J.M. Asensi ◽  
J. Andreu ◽  
J.C. Delgado
Keyword(s):  
Dark Current ◽  
Reverse Bias ◽  
Degradation Process ◽  
Open Circuit ◽  
Ring Electrode ◽  
Guard Ring ◽  
Substrate Holder ◽  
Long Time ◽  
Kinetics Of ◽  
Xenon Flash

Amorphous Silicon p-i-nphotodiodes were obtained by PECVD in a reactor with a rotating substrate holder. Reverse currents as low as 5 × 10−11 A/cm2 at a bias of − 2V were measured using a guard ring electrode to minimize lateral edge currents. The devices were degraded by a Xenon flash lamp in open circuit conditions. The kinetics of the degradation process was evaluated by studying the long time dark current transient under reverse bias.

Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor

2014 ◽  
Vol 1635 ◽  
pp. 83-88
Author(s):  
Kenji Kikuchi ◽  
Shigeyuki Imura ◽  
Kazunori Miyakawa ◽  
Hiroshi Ohtake ◽  
Misao Kubota ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Efficiency ◽  
Repetition Rate ◽  
Dark Current ◽  
Carrier Density ◽  
High Efficiency ◽  
Visible Region ◽  
Laser Frequency ◽  
Image Sensors ◽  
High Quantum Efficiency

ABSTRACTWe examined the potential application of CuIn1-xGaxSe1-ySy (CIGS) film for visible light image sensors. CIGS chalcopyrite semiconductors, which are representative of high efficiency thin film solar cells, have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. The dark current of this hetero-junction was 10-9 A/cm2 at less than 7 V. Moreover, an avalanche multiplication phenomenon was observed at an applied voltage of over 8 V. However, this structure had sensitivity only in the ultraviolet light region due to the much lower carrier density of the Ga2O3 layer. We therefore used a tin-doped Ga2O3 (Ga2O3:Sn) layer deposited by pulsed laser deposition (PLD) for the n-type layer to increase the carrier density. The sensitivity of the visible region was observed in the Ga2O3:Sn/CIGS hetero-junction. We also investigated the influence of the laser frequency of the PLD on the transmittance of Ga2O3:Sn and the quantum efficiency of this hetero-junction. Ga2O3:Sn film deposited at a 0.1-Hz laser repetition rate had higher transmittance than at a 10-Hz repetition rate. The Ga2O3:Sn/CIGS hetero-junction also had a higher quantum efficiency with the lower rate (50%) than with the higher rate (30%).

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